Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels [PDF]
, 2017 The experimental results from 8 nm diameter silicon nanowire junctionless field effect transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to 1.15 mA/m for 1.0 V and 2.52 mA/m for 1.8 V gate overdrive with an off-current
Amoroso, Salvatore M. +9 more
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Enhancement and tunability of near-field radiative heat transfer mediated by surface plasmon polaritons in thin plasmonic films [PDF]
, 2015 The properties of thermal radiation exchange between hot and cold objects can be strongly modified if they interact in the near field where electromagnetic coupling occurs across gaps narrower than the dominant wavelength of thermal radiation.
Boriskina, Svetlana V. +5 more
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Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric
AIP Advances, 2018 High k dielectrics, such as Al2O3, has attracted increasing research attention for its use as the gate dielectric of 4H-SiC MOS capacitors. Since the dielectric constant of Al2O3 is not high enough, many other high-k dielectrics are actively explored. In
Lin Liang +4 more
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Journal of Telecommunications and Information Technology, 2023 The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference ...
Florian Zaunert +3 more
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Scaling study of Si and strained Si n-MOSFETs with different high-k gate stacks [PDF]
, 2004 Using ensemble Monte Carlo device simulations, this paper studies the impact of interface roughness and soft-optical phonon scattering on the performance of sub-100nm Si and strained Si MOSFETs with different high-k gate stacks. Devices with gate lengths
Adam-Lema, F. +4 more
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Experimental Characterization of Electrical Discharge Machining of Aluminum 6061 T6 Alloy using Different Dielectrics [PDF]
, 2019 Electrical discharge machining is a non-traditional machining method broadly employed in industries for machining of parts that have typical profiles and require great accuracy.
Ismail, S. O. +4 more
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Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics
Materials Research Express, 2022 We report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k . The gate insulator consists of a high- k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked ...
Yiwen Liu +3 more
doaj +1 more source
Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs [PDF]
Журнал нано- та електронної фізики, 2011 The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA).
N. Shashank +3 more
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Nanoscale Research Letters, 2017 In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu +11 more
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Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
Applied Sciences, 2012 This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment.
Yen-Ting Chen +4 more
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