Results 21 to 30 of about 5,577 (264)
The Electrochemical Society Interface, 2005 Microelectronics has been the most important driving force for almost all kinds of technology evolutions in the past four decades. The size of the metal-oxide-semiconductor (MOS) transistor, which underpins Si microelectronics, has been reduced to a factor of 1,000.
Durga Misra, Hiroshi Iwai, Hei Wong
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Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
Applied Sciences, 2012 This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment.
Yen-Ting Chen +4 more
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AIP Advances, 2019 Flexible single-crystalline silicon in-plane-gate thin-film transistors (TFTs) with high-k gate dielectrics on plastic substrates have been demonstrated in this letter.
Yibo Zhang +4 more
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Recurrent Hypothermia and Autonomic Dysfunction Secondary to Shapiro Syndrome
Annals of Clinical and Translational Neurology, EarlyView.ABSTRACT A 44‐year‐old man presented with recurrent hypothermia, diaphoresis and hypertension. Extensive investigation for infectious, inflammatory, metabolic and endocrine aetiologies was negative. MR scan of the brain demonstrated no lesions but revealed callosal dysgenesis, consistent with Shapiro syndrome.
Naveen Kumar +3 more
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Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor [PDF]
Журнал нано- та електронної фізики, 2016 The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN ...
Fatima Zohra Rahou +2 more
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Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
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Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design
Advanced Electronic MaterialsDielectric materials with high relative permittivity, i.e., high‐k dielectrics, are in great demand for application as gate dielectric for the development of field‐effect transistors operating at low voltages.
Beomjin Jeong, Kamal Asadi
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Advanced Engineering Materials, EarlyView.This article presents the design, modeling, and characterization of air‐pressure–actuated programmable vibroacoustic metamaterials (PVAMM). The study focuses on leveraging air pressure to dynamically tune resonance frequencies for effective noise attenuation.
William Kaal +2 more
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Karl Popper and the Mechanisms of Hydrogen Embrittlement
Advanced Engineering Materials, EarlyView.Representation of the beginning of loss of ductility rather than embrittlement. Small concentrations of hydrogen in a diffusible form within iron are well‐established to harm the mechanical integrity of steels. There are theories that attempt to explain the pernicious role of hydrogen.
H. K. D. H. Bhadeshia
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Advanced Powder MaterialsPolymer dielectrics possessing excellent electrical insulation and high thermal conductivity are pivotal for dielectric capacitors at elevated temperatures.
Xiaona Li +8 more
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