Results 21 to 30 of about 22,416,589 (293)
Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs [PDF]
Журнал нано- та електронної фізики, 2011 The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA).
N. Shashank +3 more
doaj
Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics
Materials Research Express, 2022 We report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k . The gate insulator consists of a high- k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked ...
Yiwen Liu +3 more
doaj +1 more source
Optimization of Fluorine Plasma Treatment for Interface Improvement on HfO2/In0.53Ga0.47As MOSFETs
Applied Sciences, 2012 This paper reports significant improvements in the electrical performance of In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) by a post-gate CF4/O2 plasma treatment.
Yen-Ting Chen +4 more
doaj +1 more source
Anomalous Phenomena in Solid Dielectrics under High Electric Fields (Keynote)
, 2009 Solid dielectrics have been used extensively in electrical and electronic industries. In the power industry, ultra high voltage transmission and cost saving of power equipment often result in that the dielectrics are operating under high electric fields.
G Chen, Chen, George
core +1 more source
Benefits of high-k dielectrics in 4H-SiC trench MOSFETs
, 2004 The use of high-k dielectrics in 4H-SiC devices has recently attracted interest from the point of view of investigating whether such materials offer enhanced channel conduction when incorporated into 4H-SiC MOSFETS.
Wright NG +4 more
core +5 more sources
Nanoscale Research Letters, 2017 In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu +11 more
doaj +1 more source
AIP Advances, 2019 Flexible single-crystalline silicon in-plane-gate thin-film transistors (TFTs) with high-k gate dielectrics on plastic substrates have been demonstrated in this letter.
Yibo Zhang +4 more
doaj +1 more source
Membrane composition and thermodynamic identity as boundaries of life for synthetic cell research
FEBS Letters, EarlyView.What makes a cell a cell? The boundary of a living cell is not just a wall. Read as a Markov blanket, the membrane separates internal from external states, generating identity and non‐equilibrium order. Can this identity be rebuilt from scratch in a synthetic cell?
Caterina Presutti, Bert Poolman
wiley +1 more source
Effects of High-k Dielectrics with Metal Gate for Electrical Characteristics of SOI TRI-GATE FinFET Transistor [PDF]
Журнал нано- та електронної фізики, 2016 The implementation of high-k gate dielectrics is one of several strategies developed to allow further miniaturization of microelectronic components. From the simulation result; it was shown that HfO2 is the best dielectric material with metal gate TiN ...
Fatima Zohra Rahou +2 more
doaj +1 more source
Recent insights into the molecular mechanism of ubiquinol oxidation by cytochrome bc1
FEBS Open Bio, EarlyView.The review reflects on the mechanism of the catalytic reaction in cytochrome bc1: the electron bifurcation that involves the separation of two electrons derived from the quinol oxidation to opposite sides of the enzyme across the membrane. This review summarizes the long‐standing effort to understand the mechanism of quinol oxidation catalyzed by ...
Anna Wójcik‐Augustyn +2 more
wiley +1 more source