Results 11 to 20 of about 5,577 (264)

High K Low Loss Dielectrics Co-Fireable with LTCC

Active and Passive Electronic Components, 2002
Rapid growth in the application of LTCC technology for RF wireless is clearly driven by the trend of miniaturization and mobile communication systems. This technology provides the possibility of integration of passive components in a cost effective way ...
Christina Modes, Stefan Malkmus, Frieder Gora   +2 more
doaj   +1 more source

Surface‐coated polymer nanocomposites containing z‐aligned high‐k nanowires as high‐performance dielectrics at elevated temperatures

IET Nanodielectrics, 2023
Recently, demands for high‐performance polymer film capacitors at elevated temperatures have become more urgent. High dielectric constant is essential for dielectric materials to achieve substantial energy density at relatively low electric fields, which
Sang Cheng, Mingcong Yang, Jing Fu, Rui Wang, Jinliang He, Qi Li   +5 more
doaj   +1 more source

High-K dielectric sulfur-selenium alloys [PDF]

Science Advances, 2019
The synthesis of high-K flexible dielectric material is presented using two commonly used inorganic materials S and Se.
Sandhya Susarla, Thierry Tsafack, Peter Samora Owuor, Anand B. Puthirath, Jordan A. Hachtel, Ganguli Babu, Amey Apte, BenMaan I. Jawdat, Martin S. Hilario, Albert Lerma, Hector A. Calderon, Francisco C. Robles Hernandez, David W. Tam, Tong Li, Andrew R. Lupini, Juan Carlos Idrobo, Jun Lou, Bingqing Wei, Pengcheng Dai, Chandra Sekhar Tiwary, Pulickel M. Ajayan   +20 more
openaire   +4 more sources

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

IEEE Access, 2020
In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao   +7 more
doaj   +1 more source

Challenges for 10 nm MOSFET process integration

Journal of Telecommunications and Information Technology, 2023
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed.
Mikael Östling, Bengt Gunnar Malm, Martin von Haartman, Julius H ̊allstedt, Zhen Zhang, Per-Erik Hellström, Shili Zhang   +6 more
doaj   +1 more source

Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

AIP Advances, 2018
High k dielectrics, such as Al2O3, has attracted increasing research attention for its use as the gate dielectric of 4H-SiC MOS capacitors. Since the dielectric constant of Al2O3 is not high enough, many other high-k dielectrics are actively explored. In
Lin Liang, Wei Li, Sichao Li, Xuefei Li, Yanqing Wu   +4 more
doaj   +1 more source

Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data

Journal of Telecommunications and Information Technology, 2023
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference ...
Florian Zaunert, Ralf Endres, Yordan Stefanov, Udo Schwalke   +3 more
doaj   +1 more source

Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs [PDF]

Журнал нано- та електронної фізики, 2011
The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA).
N. Shashank, Vikram Singh, W.R. Taube, R.K. Nahar   +3 more
doaj  

Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics

Materials Research Express, 2022
We report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k . The gate insulator consists of a high- k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked ...
Yiwen Liu, Yongfei Wang, Xiao Li, Zhizhi Hu   +3 more
doaj   +1 more source

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Nanoscale Research Letters, 2017
In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu, Yang Zhang, Zhenjie Tang, Zhengjie Shao, Guofu Zhou, Minghui Qin, Min Zeng, Sujuan Wu, Zhang Zhang, Jinwei Gao, Xubing Lu, Junming Liu   +11 more
doaj   +1 more source