Results 11 to 20 of about 22,416,589 (293)

High-k Gate Dielectrics

The Electrochemical Society Interface, 2005
Microelectronics has been the most important driving force for almost all kinds of technology evolutions in the past four decades. The size of the metal-oxide-semiconductor (MOS) transistor, which underpins Si microelectronics, has been reduced to a factor of 1,000.
Durga Misra, Hiroshi Iwai, Hei Wong
openaire   +2 more sources

Healing effect of high-energy proton irradiation on the reliability of HfZrO based high-k dielectrics [PDF]

Nano Convergence
This study investigates the impact of high-energy proton irradiation (33 and 100 MeV) on the radiation response and statistical uniformity of the breakdown field of HfxZr1−xO2 based metal–insulator–metal capacitors.
Chan Bin Lee, Useok Choi, Yongsu Lee, Jun-Hyeok Choi, Hyeon-Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jun Yeong Hong, Jae Min Jo, Jeong Min Park, Hyeon Jun Hwang, Chang Goo Kang, Byoung Hun Lee   +12 more
doaj   +2 more sources

Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics [PDF]

Nanoscale Research Letters, 2011
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al2O3-based gate stack, after a thermal annealing process, affects the variability of its electrical properties ...
Lanza Mario, Iglesias Vanessa, Porti Marc, Nafria Montse, Aymerich Xavier   +4 more
doaj   +2 more sources

Performance optimization of InSe-FETs using high-k dielectric materials for analog/RF applications [PDF]

Scientific Reports
This study investigates the performance of Indium Selenide (InSe)-based field-effect transistors (FETs) incorporating high-k dielectric materials, using atomistic simulations based on the non-equilibrium Green’s function formalism.
Md Akram Ahmad, Muzaffar Imam, Bhubon Chandra Mech, V. Bharath Sreenivasulu   +3 more
doaj   +2 more sources

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

IEEE Access, 2020
In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao   +7 more
doaj   +1 more source

Challenges for 10 nm MOSFET process integration

Journal of Telecommunications and Information Technology, 2023
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed.
Mikael Östling, Bengt Gunnar Malm, Martin von Haartman, Julius H ̊allstedt, Zhen Zhang, Per-Erik Hellström, Shili Zhang   +6 more
doaj   +1 more source

Benefits of high-k dielectrics in 4H-SIC trench MOSFETs

The use of high-k dielectrics in 4H-SiC devices has recently attracted interest from the point of view of investigating whether such materials offer enhanced channel conduction when incorporated into 4H-SiC MOSFETS.
Wright NG, Poolamai N, Johnson CM, Vassilevski K, Horsfall AB   +4 more
core   +5 more sources

High-K dielectric sulfur-selenium alloys [PDF]

Science Advances, 2019
The synthesis of high-K flexible dielectric material is presented using two commonly used inorganic materials S and Se.
Sandhya Susarla, Thierry Tsafack, Peter Samora Owuor, Anand B. Puthirath, Jordan A. Hachtel, Ganguli Babu, Amey Apte, BenMaan I. Jawdat, Martin S. Hilario, Albert Lerma, Hector A. Calderon, Francisco C. Robles Hernandez, David W. Tam, Tong Li, Andrew R. Lupini, Juan Carlos Idrobo, Jun Lou, Bingqing Wei, Pengcheng Dai, Chandra Sekhar Tiwary, Pulickel M. Ajayan   +20 more
openaire   +4 more sources

Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

AIP Advances, 2018
High k dielectrics, such as Al2O3, has attracted increasing research attention for its use as the gate dielectric of 4H-SiC MOS capacitors. Since the dielectric constant of Al2O3 is not high enough, many other high-k dielectrics are actively explored. In
Lin Liang, Wei Li, Sichao Li, Xuefei Li, Yanqing Wu   +4 more
doaj   +1 more source

Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data

Journal of Telecommunications and Information Technology, 2023
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference ...
Florian Zaunert, Ralf Endres, Yordan Stefanov, Udo Schwalke   +3 more
doaj   +1 more source