Results 11 to 20 of about 5,561 (264)
This paper investigates the double dielectrics enhancement LDMOS (DDE LDMOS) with high-k field dielectric and low-k buried dielectric. The analytical models of the potential and electric field, optimal breakdown voltage and drift doping concentration are
Jiafei Yao +8 more
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High K Low Loss Dielectrics Co-Fireable with LTCC
Rapid growth in the application of LTCC technology for RF wireless is clearly driven by the trend of miniaturization and mobile communication systems. This technology provides the possibility of integration of passive components in a cost effective way ...
Christina Modes +2 more
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Recently, demands for high‐performance polymer film capacitors at elevated temperatures have become more urgent. High dielectric constant is essential for dielectric materials to achieve substantial energy density at relatively low electric fields, which
Sang Cheng +5 more
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Microelectronics has been the most important driving force for almost all kinds of technology evolutions in the past four decades. The size of the metal-oxide-semiconductor (MOS) transistor, which underpins Si microelectronics, has been reduced to a factor of 1,000.
Durga Misra, Hiroshi Iwai, Hei Wong
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In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai +7 more
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Challenges for 10 nm MOSFET process integration
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed.
Mikael Östling +6 more
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Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric
High k dielectrics, such as Al2O3, has attracted increasing research attention for its use as the gate dielectric of 4H-SiC MOS capacitors. Since the dielectric constant of Al2O3 is not high enough, many other high-k dielectrics are actively explored. In
Lin Liang +4 more
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The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference ...
Florian Zaunert +3 more
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Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics
We report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k . The gate insulator consists of a high- k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked ...
Yiwen Liu +3 more
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Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs [PDF]
The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA).
N. Shashank +3 more
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