Results 11 to 20 of about 57,323 (293)

Peculiarities of the interface between high-permittivity dielectrics and semiconductors

Frontiers in Materials, 2014
Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high permittivity dielectrics (high-k) is a crucial step in the further down-scaling of microelectronic devices.
Nenad eNovkovski
doaj   +1 more source

Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric

Results in Physics, 2022
This paper investigates the double dielectrics enhancement LDMOS (DDE LDMOS) with high-k field dielectric and low-k buried dielectric. The analytical models of the potential and electric field, optimal breakdown voltage and drift doping concentration are
Jiafei Yao, Xin Liu, Mingshun Sun, Tianci Xu, Man Li, Jing Chen, Maolin Zhang, Jun Zhang, Yufeng Guo   +8 more
doaj   +1 more source

Accurate modeling of gate capacitance in deep submicron MOSFETs with high-K gate-dielectrics [PDF]

, 2004
Gate capacitance of metal-oxide-semiconductor devices with ultra-thin high-K gate-dielectric materials is calculated taking into account the penetration of wave functions into the gate-dielectric.
A. Haque, Chim, Ghetti, Hakim, Haque, Haque, Haque, Kauser, M.M.A. Hakim, Mudanai, Mudanai, Richter, Stern, Städele, Wilk, Yang, Yeo   +16 more
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High K Low Loss Dielectrics Co-Fireable with LTCC

Active and Passive Electronic Components, 2002
Rapid growth in the application of LTCC technology for RF wireless is clearly driven by the trend of miniaturization and mobile communication systems. This technology provides the possibility of integration of passive components in a cost effective way ...
Christina Modes, Stefan Malkmus, Frieder Gora   +2 more
doaj   +1 more source

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors [PDF]

, 2014
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge ...
Behnam, Ashkan, Bianchi, Massimiliano, Carrion, Enrique A., Islam, Sharnali, Malik, Akshay, Pop, Eric, Serov, Andrey Y., Sordan, Roman, Xiong, Feng   +8 more
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High-k Gate Dielectrics

The Electrochemical Society Interface, 2005
Microelectronics has been the most important driving force for almost all kinds of technology evolutions in the past four decades. The size of the metal-oxide-semiconductor (MOS) transistor, which underpins Si microelectronics, has been reduced to a factor of 1,000.
Durga Misra, Hiroshi Iwai, Hei Wong
openaire   +1 more source

Surface‐coated polymer nanocomposites containing z‐aligned high‐k nanowires as high‐performance dielectrics at elevated temperatures

IET Nanodielectrics, 2023
Recently, demands for high‐performance polymer film capacitors at elevated temperatures have become more urgent. High dielectric constant is essential for dielectric materials to achieve substantial energy density at relatively low electric fields, which
Sang Cheng, Mingcong Yang, Jing Fu, Rui Wang, Jinliang He, Qi Li   +5 more
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Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

IEEE Access, 2020
In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao   +7 more
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Challenges for 10 nm MOSFET process integration

Journal of Telecommunications and Information Technology, 2023
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed.
Mikael Östling, Bengt Gunnar Malm, Martin von Haartman, Julius H ̊allstedt, Zhen Zhang, Per-Erik Hellström, Shili Zhang   +6 more
doaj   +1 more source

Degradation and breakdown characteristics of thin MgO dielectric layers [PDF]

, 2010
MgO has been suggested as a possible high-k dielectric for future complementary metal-oxide semiconductor processes. In this work, the time dependent dielectric breakdown (TDDB) characteristics of 20 nm MgO films are discussed.
Degraeve R., Greg Hughes, Krishnan A. T., Patrick Casey, Robert O’Connor, Simon B. Newcomb   +5 more
core   +1 more source