Results 11 to 20 of about 5,561 (264)

Double dielectrics enhancement on the LDMOS using high-k field dielectric and low-k buried dielectric

open access: yesResults in Physics, 2022
This paper investigates the double dielectrics enhancement LDMOS (DDE LDMOS) with high-k field dielectric and low-k buried dielectric. The analytical models of the potential and electric field, optimal breakdown voltage and drift doping concentration are
Jiafei Yao   +8 more
doaj   +1 more source

High K Low Loss Dielectrics Co-Fireable with LTCC

open access: yesActive and Passive Electronic Components, 2002
Rapid growth in the application of LTCC technology for RF wireless is clearly driven by the trend of miniaturization and mobile communication systems. This technology provides the possibility of integration of passive components in a cost effective way ...
Christina Modes   +2 more
doaj   +1 more source

Surface‐coated polymer nanocomposites containing z‐aligned high‐k nanowires as high‐performance dielectrics at elevated temperatures

open access: yesIET Nanodielectrics, 2023
Recently, demands for high‐performance polymer film capacitors at elevated temperatures have become more urgent. High dielectric constant is essential for dielectric materials to achieve substantial energy density at relatively low electric fields, which
Sang Cheng   +5 more
doaj   +1 more source

High-k Gate Dielectrics

open access: yesThe Electrochemical Society Interface, 2005
Microelectronics has been the most important driving force for almost all kinds of technology evolutions in the past four decades. The size of the metal-oxide-semiconductor (MOS) transistor, which underpins Si microelectronics, has been reduced to a factor of 1,000.
Durga Misra, Hiroshi Iwai, Hei Wong
openaire   +1 more source

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

open access: yesIEEE Access, 2020
In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai   +7 more
doaj   +1 more source

Challenges for 10 nm MOSFET process integration

open access: yesJournal of Telecommunications and Information Technology, 2023
An overview of critical integration issues for future generation MOSFETs towards 10 nm gate length is presented. Novel materials and innovative structures are discussed.
Mikael Östling   +6 more
doaj   +1 more source

Interface properties study on SiC MOS with high-k hafnium silicate gate dielectric

open access: yesAIP Advances, 2018
High k dielectrics, such as Al2O3, has attracted increasing research attention for its use as the gate dielectric of 4H-SiC MOS capacitors. Since the dielectric constant of Al2O3 is not high enough, many other high-k dielectrics are actively explored. In
Lin Liang   +4 more
doaj   +1 more source

Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data

open access: yesJournal of Telecommunications and Information Technology, 2023
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their reference ...
Florian Zaunert   +3 more
doaj   +1 more source

Organic field-effect transistors with low-temperature curable high-k hybrid gate dielectrics

open access: yesMaterials Research Express, 2022
We report a low-voltage-operated organic field-effect transistor that uses a hybrid gate insulator that has a high dielectric constant k . The gate insulator consists of a high- k polymer cyanoetylated pullulan (CEP) that can be efficiently cross-linked ...
Yiwen Liu   +3 more
doaj   +1 more source

Role of Interface Charges on High-k Based Poly-Si and Metal Gate Nano-Scale MOSFETs [PDF]

open access: yesЖурнал нано- та електронної фізики, 2011
The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA).
N. Shashank   +3 more
doaj  

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