Results 41 to 50 of about 57,323 (293)

Resolving the High‐k Paradox in Organic Field‐Effect Transistors Through Rational Dielectric Design

Advanced Electronic Materials
Dielectric materials with high relative permittivity, i.e., high‐k dielectrics, are in great demand for application as gate dielectric for the development of field‐effect transistors operating at low voltages.
Beomjin Jeong, Kamal Asadi
doaj   +1 more source

Atomic force microscopy data of novel high-k hydrocarbon films synthesized on Si wafers for gate dielectric applications

Data in Brief, 2020
This article presents data obtained from the atomic force microscopy (AFM) images of ultrathin high-k hydrocarbon (HC) films. The high-k HC films were synthesized on Si(100) wafers at various growth temperatures by using inductively-coupled plasma ...
Jihwan Kwon, Dong-Ok Kim, Sangyeob Lee, Eui-Tae Kim   +3 more
doaj   +1 more source

Enhanced Thermal Conductivity and Dielectric Properties of Epoxy Composites with Fluorinated Graphene Nanofillers

Nanomaterials, 2023
The demand for high-performance dielectrics has increased due to the rapid development of modern electric power and electronic technology. Composite dielectrics, which can overcome the limitations of traditional single polymers in thermal conductivity ...
Jiacheng Zhang, Zi Wang, Guoqing Jiang, Huachao Wei, Zongxi Zhang, Junwen Ren   +5 more
doaj   +1 more source

Clinical Outcomes of SEEG‐Guided Radiofrequency Thermocoagulation in Children With Focal Drug‐Resistant Epilepsy: A Multicenter Real‐World Study

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT Objective Stereoelectroencephalography‐guided radiofrequency thermocoagulation (SEEG‐RFTC) has emerged as a safe and effective minimally invasive treatment for children with drug‐resistant focal epilepsy. Although evidence from real‐world studies remains limited, numerous pediatric cases have demonstrated promising outcomes. This retrospective
Weitao Chen, Stéphane Jean, Weihong Liu, Yihai Dai, Xinrong Fang, Xiaoqiang Wei, Shan Chen, Shiwei Song   +7 more
wiley   +1 more source

Crosstalk between nanotube devices: contact and channel effects

, 2006
At reduced dimensionality, Coulomb interactions play a crucial role in determining device properties. While such interactions within the same carbon nanotube have been shown to have unexpected properties, device integration and multi-nanotube devices ...
Datta S, Dimaki M, François Léonard, Hertel T, Lopez-Sancho M P, Léonard F   +5 more
core   +1 more source

Recurrent Hypothermia and Autonomic Dysfunction Secondary to Shapiro Syndrome

Annals of Clinical and Translational Neurology, EarlyView.
ABSTRACT A 44‐year‐old man presented with recurrent hypothermia, diaphoresis and hypertension. Extensive investigation for infectious, inflammatory, metabolic and endocrine aetiologies was negative. MR scan of the brain demonstrated no lesions but revealed callosal dysgenesis, consistent with Shapiro syndrome.
Naveen Kumar, Jeremy Johnson, Susanne Watkins, Eoin Mulroy   +3 more
wiley   +1 more source

Enhanced capacitive energy storage of polyetherimide at high temperatures by integration of electrical insulation and thermal conductivity

Advanced Powder Materials
Polymer dielectrics possessing excellent electrical insulation and high thermal conductivity are pivotal for dielectric capacitors at elevated temperatures.
Xiaona Li, Hang Luo, Di Zhai, Yuting Wan, Guanghu He, Deng Hu, Hongshuai Hou, Dou Zhang, Shujun Zhang   +8 more
doaj   +1 more source

Methodology for the Simulation of the Variability of MOSFETs With Polycrystalline High-k Dielectrics Using CAFM Input Data

IEEE Access, 2021
In this work, a simulation methodology, whose inputs are Conductive Atomic Force Microscope (CAFM) experimental data, is proposed to evaluate the impact of nanoscale variability sources related to the polycrystallization of high-k dielectrics (i.e ...
A. Ruiz, C. Couso, N. Seoane, M. Porti, A. J. Garcia-Loureiro, M. Nafria   +5 more
doaj   +1 more source

Role of interface charges on high-k based poly-Si and aetal gate nano-scale MOSFETs [PDF]

, 2011
The characteristics of typical sub-100 nm high K gate dielectrics MOSFET with different gate materials are simulated by two dimensional device simulators (ATLAS and ATHENA).
Nahar, R.K., Shashank, N., Singh, V., Taube, W.R.   +3 more
core  

Fast Detrapping Transients in High-K Dielectric Films [PDF]

ECS Transactions, 2009
Charge trapping and detrapping are mechanisms which substantially modify dynamically the electric features of high-k dielectrics and cause instability of the MOS flat band voltage. The timescale on which such phenomena take place depends on the space and energy distribution of traps and in high-k dielectrics it may span on a very wide interval.
RAO, ROSARIO, IRRERA, Fernanda
openaire   +2 more sources