Results 51 to 60 of about 57,323 (293)
Advanced Engineering Materials, Volume 27, Issue 6, March 2025.ErB4 and NdB4 nanostructured powders are produced by mechanochemical synthesis. 5 h mechanical alloying and 4 M HCl acid leaching are used in the production. ErB4 and NdB4 powders exhibit maximum magnetization of 0.4726 emu g−1 accompanied with an antiferromagnetic‐to‐paramagnetic phase transition at about TN = 18 K and 0.132 emu g−1 with a maximum at ...
Burçak Boztemur +5 more
wiley +1 more source
Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics
Active and Passive Electronic Components, 2012 The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 ...
Chao-Te Liu, Wen-Hsi Lee, Jui-Feng Su
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Nanomaterials, 2023 The requirements for ever-increasing volumes of data storage have urged intensive studies to find feasible means to satisfy them. In the long run, new device concepts and technologies that overcome the limitations of traditional CMOS-based memory cells ...
Dencho Spassov, Albena Paskaleva
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Harnessing Fungal Biowelding for Constructing Mycelium‐Engineered Materials
Advanced Engineering Materials, EarlyView.Mycelium‐bound composites (MBCs) offer low‐carbon alternatives for construction, yet interfacial bonding remains a critical challenge. This review examines fungal biowelding as a biocompatible adhesive, elucidating mycelium‐mediated interfacial mechanisms and their role in material assembly. Strategies to optimize biowelding are discussed, highlighting
Xue Brenda Bai +2 more
wiley +1 more source
X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics
AIP Advances, 2014 This work presents a detailed study on the chemical composition and bond structures of CeO2/La2O3 stacked gate dielectrics based on x-ray photoelectron spectroscopy (XPS) measurements at different depths.
Jieqiong Zhang +4 more
doaj +1 more source
Electronic materials for solution-processed TFTs
Materials Research Express, 2023 Sol–gel processed thin-film transistors (TFTs) have emerged as a promising technology for next-generationelectronics. TFTs are widely used as switching devices in a various applications, like sensors, displays, memory, and logic circuits.
Vishwas Acharya +2 more
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Low-voltage organic transistors and inverters with ultra-thin fluoropolymer gate dielectric
, 2009 We report on the simple fabrication of hysteresis-free and electrically stable organic field-effect transistors (OFETs) and inverters operating at voltages
Batlogg, B. +3 more
core +1 more source
Planar Solid‐State Nanopores Toward Scalable Nanofluidic Integration Based on CMOS Technology
Advanced Engineering Materials, EarlyView.We present a scalable silicon‐based fabrication strategy for planar solid‐state nanopores to enable their integration with complex nanofluidic systems. Prototype devices demonstrate normal voltage‐current characteristics, good noise performance, and appreciable streaming currents. Our CMOS‐compatible fabrication process offers precise geometric control
Ngan Hoang Pham +7 more
wiley +1 more source
Scalable Dielectrics Technology for 2D Materials Electronics
Advanced Electronic MaterialsThe integration of dielectrics with two‐dimensional (2D) materials by scalable approaches represents a key requirement and one of the open challenges for the future industrialization of 2D‐based electronics.
Emanuela Schilirò +4 more
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Challenges and Prospects of Nanoscale MOSFET Scaling: A Review
Anbar Journal of Engineering SciencesThis review surveys scaling limitations and solution strategies for nanoscale MOSFETs, including high-k dielectrics, metal gates, FinFETs, GAA devices, and beyond-CMOS technologies.
Ahmed S. Al-Jawadi +2 more
doaj +1 more source