Results 71 to 80 of about 57,323 (293)

High-k dielectrics on (100) and (110) n-InAs: Physical and electrical characterizations

open access: yesAIP Advances, 2014
Two high-k dielectric materials (Al2O3 and HfO2) were deposited on n-type (100) and (110) InAs surface orientations to investigate physical properties of the oxide/semiconductor interfaces and the interface trap density (Dit).
C. H. Wang   +18 more
doaj   +1 more source

Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates

open access: yes, 2012
We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates.
A. Dimoulas   +6 more
core   +1 more source

Crosslinked fluoropolymers exhibiting superior high-temperature energy density and charge-discharge efficiency [PDF]

open access: yes, 2020
Superior high-temperature discharged energy densities in comparison to those of the current dielectric polymers have been demonstrated in the crosslinked ...
Ai, Ding   +8 more
core  

Composition‐Tuned Enhancement of the Anomalous Nernst Effect in FeCo–Pt Thin Films on Rigid and Flexible Substrates

open access: yesAdvanced Engineering Materials, EarlyView.
Disordered (Fe50Co50)1−xPtx thin films exhibit a pronounced anomalous Nernst effect (ANE) with a strong composition dependence on both rigid and flexible substrates. The transverse thermoelectric response peaks near 22.5 at.% Pt, accompanied by enhanced αxy/σxy scaling, thermal transport, and ANE sensitivity.
Mojtaba Mohammadi   +2 more
wiley   +1 more source

Powder Optimization Strategies for Binder Jetting Printing of BaTiO3 and Ba0,6Sr0,4TiO3 Ceramics

open access: yesAdvanced Engineering Materials, EarlyView.
Powder optimization is investigated to enable binder jetting of BaTiO3 and Ba0.6Sr0.4TiO3 ferroelectric ceramics. The antagonistic relationship between flowability and binder compatibility is addressed through binder impregnation of granulated powders and fumed silica addition to fine powders.
Fanny Pruvost   +4 more
wiley   +1 more source

A Class of Auxiliary Passivators for Polymer Dielectrics

open access: yesAdvanced Electronic Materials, 2023
High‐electrical‐strength polymer dielectrics are essential for advanced devices with high power and/or high integration densities and film capacitors with high energy‐storage densities. Key factors affecting the polymer dielectric electrical strength are
Xiao‐Fen Li   +4 more
doaj   +1 more source

Investigation of Oxygen‐Free Wetting Behavior of Aluminum on Copper via Molecular Dynamics Simulations and Experiments

open access: yesAdvanced Engineering Materials, EarlyView.
The wettability of aluminum droplets (Al) on different copper substrates (Cu), where liquid Al spreads on solid Cu surfaces to form a liquid–solid interface, is studied numerically and experimentally. The experimental and numerical results show good agreement in the fast‐spreading regime.
Shan Lyu   +8 more
wiley   +1 more source

Corrosion and Process Analysis of a Preoxidized MgO Recyclate‐Based Cermet Anode in Laboratory‐Scale Na‐Cryolite Molten Salt Electrolysis of Aluminum at 1000°C

open access: yesAdvanced Engineering Materials, EarlyView.
EDX elemental map of the pre‐oxidized MgO–steel cermet anode cross section after electrolysis. The development of inert anodes for aluminum electrolysis remains challenging due to the high corrosivity of cryolite‐based melts at 950°C–1000°C. This study investigates the corrosion and process behavior of a carbon‐free MgO–steel cermet anode derived from ...
Alexander Adamczyk   +7 more
wiley   +1 more source

On Artificial Magneto-Dielectric Loading for Improving the Impedance Bandwidth Properties of Microstrip Antennas

open access: yes, 2005
In the present paper we discuss the effect of artificial magneto-dielectric substrates on the impedance bandwidth properties of microstrip antennas. The results found in the literature for antenna miniaturization using magnetic or magneto-dielectric ...
Ikonen, Pekka   +3 more
core   +2 more sources

Novel high-k dielectrics for nanoelectronics [PDF]

open access: yes, 2019
The aggressive downsizing in metal-oxide-semiconductor field effect transistors (MOSFET) has been the driving force for performance progress in microelectronics. In association with device parameters related to MOSFET, SiO2 based oxide has already faced to its limit in further thinning due to excess gate leakage current.
openaire   +2 more sources

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