Results 81 to 90 of about 5,577 (264)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Healing effect of high-energy proton irradiation on the reliability of HfZrO based high-k dielectrics

Nano Convergence
This study investigates the impact of high-energy proton irradiation (33 and 100 MeV) on the radiation response and statistical uniformity of the breakdown field of HfxZr1−xO2 based metal–insulator–metal capacitors.
Chan Bin Lee, Useok Choi, Yongsu Lee, Jun-Hyeok Choi, Hyeon-Seok Shin, Uigwan Shin, Byeong Gwan Kim, Jun Yeong Hong, Jae Min Jo, Jeong Min Park, Hyeon Jun Hwang, Chang Goo Kang, Byoung Hun Lee   +12 more
doaj   +1 more source

Why model high-k dielectrics?

Journal of Non-Crystalline Solids, 2002
AbstractNew dielectrics need more than a high dielectric constant. They need to satisfy various constraints concerning band offsets, limits on charge traps, processability, reproducibility, and stability against degradation and breakdown. It seems unlikely that purely empirical approaches will produce a dielectric which justifies major investment.
openaire   +2 more sources

X‐Functionality–Driven Photocatalytic Hydrogen Evolution in 2D 4‐X‐PEA2SnI4 Perovskites

Advanced Functional Materials, EarlyView.
We report a water‐based synthesis of 2D 4‐X‐PEA2SnI4 perovskite microcrystals with prominent photocatalytic (PC) activity for H2 production. The synergy between organic functionalization and HI‐derived iodide scavenges holes suppress octahedral distortion, and favor electron accumulation, enabling a PC H2 evolution ∼20 µmol·g−1 and long‐term stability ...
Taeyeon Kim, Gayoung Seo, Seong Yeon Park, Juwon Jang, Yunho Ahn, Samiksha Mukesh Jain, Samrat Das Adhikari, Harumi Correa‐Leiva, Ignacio Utreras‐Asenjo, Oscar A. Douglas‐Gallardo, Carina Pareja‐Rivera, Kayoung Cho, Byeongsung Kim, Jhonatan Rodriguez‐Pereira, Eunseo Choi, JaeHong Park, Jin Ho Bang, Danilo H. Jara‐Quinteros, Sixto Giménez, Seog Joon Yoon, Andrés F. Gualdrón‐Reyes, Iván Mora‐Seró   +21 more
wiley   +1 more source

Titanium Suboxides Responsible for Electronic Anomaly Near Room Temperature in the Ti3C2Tx MXene

Advanced Functional Materials, EarlyView.
Our multi‐technique study reveals that the near‐room‐temperature anomaly in Ti3C2Tx MXene is linked to titanium suboxide nanodomains, including Ti3O5, embedded within the MXene host. Their temperature‐driven transformation provides an alternative explanation to solvent‐ and swelling‐based models and offers new insight into the thermally activated ...
Bence G. Márkus, Bradlee J. McIntosh, Lili Vajtai, Anna Nyáry, Sándor H. Sipos, Nirmal J. Ghimire, Ferenc Simon, László Forró, Dávid Beke   +8 more
wiley   +1 more source

Low-thermal-budget fabrication of ZnO TFTs via urea-assisted combustion synthesis of high-k ZrO2 gate dielectrics

Micro and Nano Engineering
In this work, we present a low-temperature and cost-effective fabrication of zinc oxide (ZnO) based thin film transistors (TFTs) having high-k zirconium oxide (ZrO2) thin films as gate dielectrics.
George Mitrousis, Michael Georgas, Loukas Michalas, Filippos Farmakis   +3 more
doaj   +1 more source

High-K Dielectric NEMS

, 2020
Ces dernières années, l’intérêt des chercheurs quant aux propriétés de l’oxide d’hafnium (HfO2) n’a cessé de grandir. L’une d’elles est la flexoélectricité, phénomène physique étroitement lié à la piézoélectricité, mais là où cette dernière développe une polarisation due à la simple déformation d’un matériau diélectrique, la polarité apparente due à la
openaire   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Reliability challenges of gate dielectric materials in transistors

Information & Functional Materials
The gate dielectric plays a critical role in field‐effect transistors since it determines the capability of gate control and the reliability of the device.
Ting‐Wei Liu, Zhe Zhao, Ruyue Cao, Yue‐Yang Liu, Xiangwei Jiang   +4 more
doaj   +1 more source