Results 81 to 90 of about 57,323 (293)

Raman Spectroscopic Identification of Oxide Phases in a Corroded MgO–Steel Composite Anode Used in Aluminum Molten Salt Electrolysis

open access: yesAdvanced Engineering Materials, EarlyView.
Micro‐Raman spectroscopy is applied to characterize corrosion products in a recycled‐based MgO–316L steel composite anode after molten salt electrolysis. A depth‐dependent Fe–O/Fe–Al–O layer sequence of magnetite, hercynite, and an Al‐doped magnetite transition zone is identified.
Felix Drechsler   +9 more
wiley   +1 more source

Interaction of MgO Recyclate‐Based Cermet Anode With KF‐AlF3‐Al2O3 at 800°C During Laboratory Scale Aluminum Molten Salt Electrolysis

open access: yesAdvanced Engineering Materials, EarlyView.
A carbon‐free, as‐sintered MgO–steel cermet anode, fabricated via cold isostatic pressing using MgO–C refractory recyclate, was evaluated under laboratory‐scale K‐cryolite electrolysis at 800°C. Operation at this reduced temperature, combined with the electrolyte's limited electrical conductivity, led to an increase in cell voltage.
Farhan Hossain   +7 more
wiley   +1 more source

Scalability of Atomic-Thin-Body (ATB) Transistors Based on Graphene Nanoribbons

open access: yes, 2010
A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, {\lambda}eff, is extracted from the analytical model, which cannot be approximated ...
Koester, Steven J.   +4 more
core   +1 more source

Toward Low‐Consumable Anodes: Process Simulation and Prospective Life Cycle Assessment of NiFe2O4‐NiO‐Ni‐Cu vs. Prebaked Anodes for Aluminum Production with use of Molten Salt Electrolysis

open access: yesAdvanced Engineering Materials, EarlyView.
Low‐consumable nickel ferrite‐based anodes for the Hall–Héroult process are compared with conventional prebaked carbon anodes using thermodynamic simulation and prospective life cycle assessment under contrasting future electricity system pathways from 2025 to 2050.
Felipe Alejandro Garcia Paz   +6 more
wiley   +1 more source

Photo‐Curable Stretchable High‐k Polymer/TiO2 Nanosheet Hybrid Dielectrics for Field‐Effect Transistors

open access: yesSmall Science
Elastomeric polymer materials are of interest due to their stretchability, low‐temperature processing, and scalability. In addition, the incorporation of 2D materials can further enhance the dielectric properties and capacitance of elastic polymer ...
Qun‐Gao Chen   +3 more
doaj   +1 more source

Indium diffusion through high-k dielectrics in high-k/InP stacks

open access: yesApplied Physics Letters, 2013
Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy. The analysis establishes that In-out diffusion occurs and results in the formation of a POx rich interface.
Dong, H.   +11 more
openaire   +3 more sources

Interaction of Ladle Slag With Varying SiO2 Content and Recyclate‐Based MgO–C Refractories

open access: yesAdvanced Engineering Materials, EarlyView.
Ladle slags (CaO/Al2O3 = 1) with 1–20 wt% SiO2 were investigated in contact with industrial MgO–C refractories fabricated from fresh magnesia and 50 wt% recyclate. The sessile drop method at 1600°C reveals intensive gas formation, delayed slag infiltration in recyclate‐based samples, and, under high‐SiO2 slag, formation of a dense MgAl2O4‐rich ...
Anton Yehorov   +6 more
wiley   +1 more source

Graphene field-effect transistors based on boron nitride gate dielectrics

open access: yes, 2011
Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric.
Dean, C. R.   +5 more
core   +1 more source

Hafnium-based High-k Gate Dielectrics

open access: yes, 2010
This chapter succinctly reviews the motivation to replace traditional SiO2 gate dielectrics, requirements of high-k dielectrics, brief history of high-k materials development, and latest development in Hf-based high-k dielectrics. In order to improve the performance of CMOS devices, Hf-based gate layers are being integrated into MOSFETs to achieve low ...
Huang, A. P., Yang, Z. C., Chu, Paul K.
openaire   +3 more sources

Dielectric Barrier Discharge Plasma Deoxidation of Natively Oxide Layer of Copper Powders in a Fluidized Bed

open access: yesAdvanced Engineering Materials, EarlyView.
This paper presents a novel approach to reducing oxide layers on metal powders using low‐temperature hydrogen dielectric barrier discharge plasmas at atmospheric pressure. Unlike conventional hydrogen‐plasma reductions, the powders do not contact the plasma directly.
Shukang Zhang   +3 more
wiley   +1 more source

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