Results 101 to 110 of about 22,416,589 (293)
Defect Induced Aging and Breakdown in High-k Dielectrics [PDF]
, 2018 : High-k dielectrics have been employed in the metal-oxide semiconductor field effect transistors (MOSFETs) since 45 nm technology node. In this MOSFET industry, Moore’s law projects the feature size of MOSFET scales half within every 18 months.
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Advanced Functional Materials, EarlyView.Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg +6 more
wiley +1 more source
Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies
Advanced Functional Materials, EarlyView.The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley +1 more source
Ab initio design of high-k dielectrics: LaxY1-xAlO3 [PDF]
, 2005 We use calculations based on density-functional theory in the virtual crystal approximation for the design of high-k dielectrics, which could offer an alternative to silicon dioxide in complementary metal-oxide semiconductor devices.
Curioni, A, Shevlin, SA, Andreoni, W
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Micro and Nano EngineeringIn this work, we present a low-temperature and cost-effective fabrication of zinc oxide (ZnO) based thin film transistors (TFTs) having high-k zirconium oxide (ZrO2) thin films as gate dielectrics.
George Mitrousis +3 more
doaj +1 more source
Advances in Sustainable and Wearable Textile Based Soft Robotics
Advanced Functional Materials, EarlyView.This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas +6 more
wiley +1 more source
Journal of Non-Crystalline Solids, 2002 AbstractNew dielectrics need more than a high dielectric constant. They need to satisfy various constraints concerning band offsets, limits on charge traps, processability, reproducibility, and stability against degradation and breakdown. It seems unlikely that purely empirical approaches will produce a dielectric which justifies major investment.
openaire +2 more sources
Bio‐Inspired Synthesis of Macroporous Single Crystal Particles as Scattering Agents
Advanced Functional Materials, EarlyView.A general strategy is presented that delivers unique, single‐crystal microparticles that combine submicron macroporosity and uniform particle shapes. A bioinspired approach is used to occlude three distinct types of additives – polystyrene microspheres, polymer vesicles and amino acids – within calcite single crystals, and subsequent thermal annealing ...
Stephanie E. Foster +11 more
wiley +1 more source
The mechanism of the flatband voltage shift by capping a thin layer of Me₂O₃ (Me=Gd, Y and Dy) on SiO₂ and HfO₂-based dielectrics [PDF]
, 2008 textContinuing to scale down the transistor size makes the introduction of high-k dielectric necessary. However, there are still a lot of problems with highk transistors such as worse reliability and Fermi-level pinning.
Zhang, Manhong, 1969-
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, 2009 S.482-485In this paper the application of thin high-k dielectrics as capping layers on oxide/nitride/oxide memory stacks with respect to suppression of electron injection from the gate electrode during erase operation is investigated. We demonstrate that
H. Ryssel +9 more
core +1 more source