Results 121 to 130 of about 22,416,589 (293)

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

Advanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen, Susanne Selle, Michael S. Bar, Michael Lorenz, Holger von Wenckstern, Marius Grundmann   +5 more
wiley   +1 more source

Chemically induced Fermi level pinning effects of high-k dielectrics on graphene. [PDF]

Sci Rep, 2018
Kim SY, Kim YJ, Jung U, Lee BH.
europepmc   +1 more source

Semiconducting Polymers Post‐Functionalized With Ureido‐Pyrimidinone for Robust Stretchable Transistors

Advanced Functional Materials, EarlyView.
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah, Livy Laysandra, Kosuke Terayama, Xingyu Yang, Atsushi Isobe, Tai‐Chin Chiang, Tsuyoshi Michinobu, Yu‐Cheng Chiu   +7 more
wiley   +1 more source

Tuning the Optoelectronic Properties of Wide Bandgap Perovskites: Data‐Driven Insights from Combinatorial Synthesis and High‐Throughput Experimentation

Advanced Functional Materials, EarlyView.
Combinatorial vapor deposition enables independent tuning of Cs/Pb and Br/Cl in wide‐bandgap perovskites. Automated multimodal mapping of 500+ compositions reveals a high‐energy optical transition that correlates with enhanced photoluminescence, defining a practical Cs/Pb window.
Alexander Wieczorek, Sergey Tsarev, Nathan Rodkey, Oleksandr Pshyk, Stefanie Frick, Maksym V. Kovalenko, Sebastian Siol   +6 more
wiley   +1 more source

Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics. [PDF]

ACS Appl Mater Interfaces, 2017
Nugraha MI, Häusermann R, Watanabe S, Matsui H, Sytnyk M, Heiss W, Takeya J, Loi MA, Loi MA.   +8 more
europepmc   +1 more source

High-K Gate Dielectrics

High-K Gate Dielectrics
identifier:oai:t2r2.star.titech.ac.jp ...
openaire   +3 more sources

Low-k nano-dielectrics facilitate electric-field induced phase transition in high-k ferroelectric polymers for sustainable electrocaloric refrigeration

Nature Communications
Ferroelectric polymer-based electrocaloric effect may lead to sustainable heat pumps and refrigeration owing to the large electrocaloric-induced entropy changes, flexible, lightweight and zero-global warming potential.
Qiang Li, Luqi Wei, Ni Zhong, Xiaoming Shi, Donglin Han, Shanyu Zheng, Feihong Du, Junye Shi, Jiangping Chen, Houbing Huang, Chungang Duan, Xiaoshi Qian   +11 more
doaj   +1 more source

Strong Lead‐Free Bioinspired Piezoceramics for Durable Energy Transducers

Advanced Functional Materials, EarlyView.
We fabricated brick‐and‐mortar lead‐free piezoceramics with Bi0.5Na0.5TiO3 monocrystal platelets as bricks and amorphous silica as mortar. The alignment of the bricks and the presence of the amorphous silica led to anisotropic residual stresses. These residual stresses increase the samples toughness, strength and durability while the brick alignment ...
Ruxue Yang, Temesgen Tadeyos Zate, Peiren Wang, Soumyajit Mojumder, Elo Overgaard Mogensen, Oriol Gavalda‐Diaz, Zihe Li, Shitong Zhou, Ajeet Kumar, James Roscow, Hamideh Khanbareh, Astri Bjørnetun Haugen, Florian Bouville   +12 more
wiley   +1 more source

Dielectric-semiconductor interface for high-k gate dielectrics for sub-16nm CMOS technology

, 2015
Scaling for sub-16 nm CMOS technology requires EOT scaling of gate dielectric beyond 0.7 nm. Various atomic layer deposition (ALD) methods of HfO2-based high-k gate dielectrics are currently underway to enhance the dielectric constant and reliability in ...
M. N. Bhuyian, Ding, Y., Y. Ding, Misra, D., D. Misra, Bhuyian, M. N.   +5 more
core   +1 more source

A Thermodynamic Model of Antiferroelectics and Its Application to Electric Field Induced Antiferroelectric‐Ferroelectric Transition in PbZrO3

Advanced Functional Materials, EarlyView.
A thermodynamic model that incorporates ferroelectric, antiferroelectric, and antiferrodistortive orders of PbZrO3${\rm PbZrO}_3$ is established and parameterized based on experimental measurements and first‐principles calculations. We derive a Clapeyron‐like equation for describing the temperature‐dependence of critical electric fields for the ...
Zhiyang Wang, Guodong Zhao, Aiden Ross, Long‐Qing Chen   +3 more
wiley   +1 more source