Results 141 to 150 of about 5,577 (264)

Breaking the optical loss barrier in amorphous silicon across the full visible spectrum via dopant-controlled chemical vapor deposition. [PDF]

Sci Adv
Yang Y, Im H, Lee E, Kang H, Seong J, Park Y, Kang D, Han JW, Rho J.   +8 more
europepmc   +1 more source

Simultaneous Enhancement of Performance and Stability in Dual‐Gate a‐IGZO Thin‐Film Transistors via Single‐Step Laser Annealing for Capacitor‐Less DRAM

Advanced Functional Materials, EarlyView.
A single‐step laser annealing strategy is presented for dual‐gate a‐IGZO TFTs. The steep thermal gradient induces graded oxygen doping in the channel and simultaneous WOx removal at the contacts, enabling concurrent interface and contact engineering.
Sihyeon Kwon, Junil Kim, Geuntae Park, Minseok Kim, Woohyun Hwang, Wanki Kim, Daewon Ha, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon   +9 more
wiley   +1 more source

Modeling and simulation of ZnO-based TFTs by dielectric engineering and temperature analysis for enhanced performance. [PDF]

Sci Rep
Kumar P, Askari SSA, Das MK.
europepmc   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, EarlyView.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Embedding-driven physics informed neural network for predicting optical constants across materials. [PDF]

RSC Adv
Choudhary S, Kumar R, Venkateswarlu A, Gangi Reddy S.   +3 more
europepmc   +1 more source

High-k gate dielectrics

Materials Today, 2004
openaire   +1 more source

Tunable Complementary Doping Strategy Enables High‐Performance Homo‐Channel CMOS in Monolayer WSe2

Advanced Functional Materials, EarlyView.
Polarity‐selective modulation enables a homo‐channel WSe2 CMOS platform from a single 2D semiconductor. MoOx and AlN tune WSe2 toward p‐ and n‐type operation, respectively, yielding complementary FETs and inverters with balanced switching, high voltage gain, low static power, and promising scalability for 2D logic integration.
Kuan‐Hsiang Chiu, Wen‐Chia Wu, His‐Yu Chen, Chien‐Chih Liu, Ze‐Rui Lin, Chiung‐Yuan Lin, Chenming Hu, Chao‐Hsin Chien   +7 more
wiley   +1 more source

Kramers-Kronig Diagnostic of Humidity-Induced Non-Idealities in Nanostructured Silica Capacitors. [PDF]

Sensors (Basel)
Véliz B, Vera S, Bermejo S, Orpella A, Domínguez-Pumar M.   +4 more
europepmc   +1 more source

Mitigating Concentration Polarization in Dry‐Processed Ultra‐Thick Cathodes Using a Low‐Viscosity Electrolyte With Soft Li+ Solvation

Advanced Functional Materials, EarlyView.
A low‐viscosity, soft‐solvating methyl ethanoate (ME)‐based electrolyte facilitates electrolyte infiltration into dense dry‐processed ultra‐thick NCM622 cathodes while reducing Li+ desolvation barriers at Li‐metal anodes. Balanced cathode‐scale ion transport and anode‐side interfacial kinetics mitigate concentration polarization and interfacial ...
Jae Bin Park, Yewon Park, Ah Reum Choi, Chaerin Park, Seonhee Jo, Seongwook Chae, Taekyun Kwon, Ji‐Oh Kim, Ji‐Hoon Baik, Sung Hyun Kwon, Minjoon Park, Jin Hong Lee   +11 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source