Results 151 to 160 of about 22,416,589 (293)

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

open access: yesAdvanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar   +9 more
wiley   +1 more source

Programmable Soft Actuator with Multi‐Responsiveness Based on Conductive MOF‐Liquid Crystal Polymer Composite

open access: yesAdvanced Functional Materials, EarlyView.
A sequential dual‐alignment strategy independently programs the orientation of conductive metal‐organic framework (c‐MOF) microrods and liquid crystals within a composite film. This approach creates an asymmetric bilayer structure that enables precise, multi‐responsive actuation.
Taegyun Hong   +5 more
wiley   +1 more source

Enhanced energy storage performance of confined co-doping dielectric films via nanoparticle self-assembly in ferroelectric phases. [PDF]

open access: yesNat Commun
Xing K   +12 more
europepmc   +1 more source

Pressure‐Assisted Dimensional Transformation of 2D Hydrogenated Borophene into 0D Boron Quantum Dots

open access: yesAdvanced Functional Materials, EarlyView.
Hydrogenated borophene (HB) is transformed into distinct boron nanostructures through a solvent‐free thermal process. Under flowing nitrogen, hydrogen escape promotes reconstruction into B2O3 nanoplatelets, whereas hydrogen‐induced pressure under sealed conditions facilitates fragmentation into boron quantum dots.
Ozden Gunes Yildiz   +11 more
wiley   +1 more source

Reactions for Yttrium Silicate High-k Dielectrics

open access: yes, 2000
The continued scaling of metal-oxide-semiconductor-field-effect-transistors (MOSFETs) will require replacing the silicon dioxide gate dielectric with an alternate high dielectric constant (high-k) material.
Chambers, James Joseph
core  

Electrical Tuning of Ferrimagnetic Spin Alignment Angle and Compensation Temperature in Pt/IrMn3/CoGd Multilayers

open access: yesAdvanced Functional Materials, EarlyView.
Spin‐orbit torque controls the Néel vector of antiferromagnetic IrMn3, which selectively exchange‐couples with spins of Co only in the ferrimagnetic CoGd. This selective interfacial pinning induces the non‐collinear spiral spin configuration, leading to a non‐uniform distribution of local compensation temperature along the film thickness, and enabling ...
Won‐Chang Choi   +8 more
wiley   +1 more source

Porous Ultralow-κ sp<sup>2</sup>-Bonded Boron Nitride Thin Films as Copper Diffusion Barriers. [PDF]

open access: yesAdv Sci (Weinh)
Liu C   +11 more
europepmc   +1 more source

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