Results 151 to 160 of about 22,416,589 (293)
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar +9 more
wiley +1 more source
Study of n-Channel 4H-SiC MOSFETs with a High-<i>k</i>/SiO<sub>2</sub> Stacked Gate Dielectric and a p<sup>+</sup>-Polysilicon Gate. [PDF]
Lin Z, Cheng N, Cai W, Hu J, Hu S.
europepmc +1 more source
A sequential dual‐alignment strategy independently programs the orientation of conductive metal‐organic framework (c‐MOF) microrods and liquid crystals within a composite film. This approach creates an asymmetric bilayer structure that enables precise, multi‐responsive actuation.
Taegyun Hong +5 more
wiley +1 more source
Enhanced energy storage performance of confined co-doping dielectric films via nanoparticle self-assembly in ferroelectric phases. [PDF]
Xing K +12 more
europepmc +1 more source
Pressure‐Assisted Dimensional Transformation of 2D Hydrogenated Borophene into 0D Boron Quantum Dots
Hydrogenated borophene (HB) is transformed into distinct boron nanostructures through a solvent‐free thermal process. Under flowing nitrogen, hydrogen escape promotes reconstruction into B2O3 nanoplatelets, whereas hydrogen‐induced pressure under sealed conditions facilitates fragmentation into boron quantum dots.
Ozden Gunes Yildiz +11 more
wiley +1 more source
Dielectric and temperature-dependent optimization of an asymmetric gate-drain engineered core-shell dopingless nanotube tunnel FET for analog and RF performance. [PDF]
Kumar T R, Priya G L.
europepmc +1 more source
Reactions for Yttrium Silicate High-k Dielectrics
The continued scaling of metal-oxide-semiconductor-field-effect-transistors (MOSFETs) will require replacing the silicon dioxide gate dielectric with an alternate high dielectric constant (high-k) material.
Chambers, James Joseph
core
Spin‐orbit torque controls the Néel vector of antiferromagnetic IrMn3, which selectively exchange‐couples with spins of Co only in the ferrimagnetic CoGd. This selective interfacial pinning induces the non‐collinear spiral spin configuration, leading to a non‐uniform distribution of local compensation temperature along the film thickness, and enabling ...
Won‐Chang Choi +8 more
wiley +1 more source
Porous Ultralow-κ sp<sup>2</sup>-Bonded Boron Nitride Thin Films as Copper Diffusion Barriers. [PDF]
Liu C +11 more
europepmc +1 more source

