Results 111 to 120 of about 22,416,589 (293)
Reliability challenges of gate dielectric materials in transistors
Information & Functional MaterialsThe gate dielectric plays a critical role in field‐effect transistors since it determines the capability of gate control and the reliability of the device.
Ting‐Wei Liu +4 more
doaj +1 more source
Optical Signature of Moiré Superlattices Formed by Twisted SrTiO3 Membranes
Advanced Functional Materials, EarlyView.We discover optical signatures from bonded interfaces in twisted SrTiO3 moiré superlattices, including low‐frequency Raman vibrational modes and strong second‐harmonic generation, consistent with strong interlayer coupling inferred from cross‐sectional electron microscopy and ab initio calculations. ABSTRACT Moiré superlattices formed at the interfaces
T. A. M. Ragib Shahriar +13 more
wiley +1 more source
Communications EngineeringHeterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices.
Jongho Ji +12 more
doaj +1 more source
Electrospun Wood‐Derived Biopolymers as Electrodes in Electrochemical Energy Storage Technologies
Advanced Functional Materials, EarlyView.Electrospinning transforms wood‐derived cellulose and lignin into architecturally defined, binder‐free carbon electrodes with tuneable porosity and functionality. This review shows how fibre design enables decoupled charge and mass transport, enhancing performance across battery systems, while identifying key challenges in spinnability, scalability ...
Michael W. Thielke +3 more
wiley +1 more source
High-k Materials in Flash Memories
, 2006 The scaling down of Flash memories can be pursued using theconventional stacked gate architecture only with major changesof the active dielectrics, mainly the inter-poly dielectric(IPD).The required 4-6 nm EOT thickness for the IPD cannot beachieved by ...
S. Spiga +15 more
core +1 more source
Effects of Interfacial Charges On Doped and Undoped HFOX Stack Layer with Tin Metal Gate Electrode For Nano-Scaled CMOS Generation [PDF]
Журнал нано- та електронної фізики, 2011 A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped HfOx and undoped HfOx samples with titanium nitride (TiN) metal gate electrode is reported here. The metal gate work function value (4.31 eV) for TiN gate
S. Chatterjee, Y. Kuo
doaj
Advanced Functional Materials, EarlyView.Ferroelectric nanoclusters create local internal fields in a normally non‐switchable polar film because of polarization mismatch at their interfaces. That field opposes polarization in the regions with larger polarization and reinforces polarization in the regions with smaller polarization.
Anna N. Morozovska +5 more
wiley +1 more source
Performance improvement of CoTiO3 high-k dielectrics with nitrogen incorporation
, 2007 In this paper, three approaches to incorporating nitrogen in CoTiO3 high-k dielectric films, ion implantation of N2+, ion implantation of N+, and N2O plasma treatment have been investigated for the new CoTiO3 high-k dielectrics. All three methods reduced
Lei, T. F. +5 more
core +1 more source
Advanced Functional Materials, EarlyView.Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
(Invited) Issues and Challenges of High-k Dielectrics on High-Mobility Substrates
, 2011 With the current trend in device scaling, for high speed and low power applications materials with high-k dielectric constant such as Hf-based dielectrics are being integrated into standard CMOS technologies.
Misra, D., Durga Misra
core +1 more source