Results 91 to 100 of about 22,416,589 (293)

Indium diffusion through high-k dielectrics in high-k/InP stacks [PDF]

, 2013
Evidence of indium diffusion through high-k dielectric (Al2O3 and HfO2) films grown on InP (100) by atomic layer deposition is observed by angle resolved X-ray photoelectron spectroscopy and low energy ion scattering spectroscopy.
Cabrera, W., Brennan, B., S. McDonnell, Dong, H., Galatage, R., Qin, X., Santosh KC, Y. J. Chabal, B. Brennan, D. Zhernokletov, Zhernokletov, D., Cho, K., C. L. Hinkle, X. Qin, McDonnell, S., Hinkle, C., Wallace, R., KC, Santosh, W. Cabrera, R. M. Wallace, R. V. Galatage, Chabal, Y., H. Dong, K. Cho   +23 more
core   +1 more source

Novel high-k dielectrics for nanoelectronics [PDF]

, 2019
DOCTOR OF PHILOSOPHY (MSE)
openaire   +2 more sources

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films

ECS Advances
We investigated Ti-doped ZrO _2 deposition using a cyclopentadienyl tris(dimethylamino) zirconium (CpZr(NMe _2 ) _3 ) precursor and a titanium tetraisopropoxide (TTIP) precursor using an O _3 thermal atomic layer deposition process.
Seokhwi Song, Eungju Kim, Kyunghoo Kim, Jangho Bae, Jinho Lee, Chang Hwa Jung, Hanjin Lim, Hyeongtag Jeon   +7 more
doaj   +1 more source

High-K Dielectric NEMS

, 2020
Ces dernières années, l’intérêt des chercheurs quant aux propriétés de l’oxide d’hafnium (HfO2) n’a cessé de grandir. L’une d’elles est la flexoélectricité, phénomène physique étroitement lié à la piézoélectricité, mais là où cette dernière développe une polarisation due à la simple déformation d’un matériau diélectrique, la polarité apparente due à la
openaire   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

Advanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian, Jayakanth Ravichandran   +1 more
wiley   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Transferrable, wet-chemistry-derived high-k amorphous metal oxide dielectrics for two-dimensional electronic devices

Nature Communications
Two-dimensional (2D) materials hold transformative potential for next-generation electronics. The integration of high dielectric constant (k) dielectrics onto 2D semiconductors, while maintaining their pristine properties by low-defect-density interfaces,
Zhixin Yao, Huifeng Tian, U. Sasaki, Huacong Sun, Jingyi Hu, Guodong Xue, Ye Seul Jung, Ruijie Li, Zhenjiang Li, PeiChi Liao, Yihan Wang, Lina Yang Zhang, Ge Yin, Xuanyu Zhang, Yijie Luo, Wenxi Li, Yong Soo Cho, Peizhi Liu, Kaihui Liu, Yanfeng Zhang, Lifen Wang, Junjie Guo, Lei Liu   +22 more
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source