Results 91 to 100 of about 5,561 (264)

Emergent Topological Magnons and Thermal Hall Effect in 2D Filling‐Enforced Fully Compensated Ferrimagnets

Advanced Functional Materials, EarlyView.
Schematic illustration of ferroelectric‐intercalation‐driven transitions in magnetic configurations and magnonic topological phases, together with the symmetry relations of magnonic Berry curvature. ABSTRACT Magnons in collinear magnets with vanishing net magnetization offer unique advantages for spin transport, including ultrafast dynamics and ...
Yingxi Bai, Bo Yuan, Zhenzhou Guo, Jian Zhang, Ying Dai, Baibiao Huang, Xiaotian Wang, Chengwang Niu, Gang Zhang   +8 more
wiley   +1 more source

Heterogeneous integration of high-k complex-oxide gate dielectrics on wide band-gap high-electron-mobility transistors

Communications Engineering
Heterogeneous integration of dissimilar crystalline materials has recently attracted considerable attention due to its potential for high-performance multifunctional electronic and photonic devices.
Jongho Ji, Jeong Yong Yang, Sangho Lee, Seokgi Kim, Min Jae Yeom, Gyuhyung Lee, Heechang Shin, Sang-Hoon Bae, Jong-Hyun Ahn, Sungkyu Kim, Jeehwan Kim, Geonwook Yoo, Hyun S. Kum   +12 more
doaj   +1 more source

Mechanical Behavior and Fracture Mechanisms of MXene/PVDF Nanocomponsites: In Situ Characterization and Multiscale Analysis

Advanced Functional Materials, EarlyView.
Multiscale experiments and modeling reveal how Ti3C2Tx MXene nanosheets reinforce PVDF nanocomposites. An optimal MXene loading (∼1 wt.%) nearly doubles tensile strength through efficient stress transfer, flake alignment, and crack‐deflection mechanisms, transforming ductile polymer behavior into a controlled multi‐stage fracture pathway which aligns ...
Bita Soltan Mohammadlou, James FitzPatrick, Li Meng, Kateryna Shevchuk, Ahmad Najafi, Yury Gogotsi   +5 more
wiley   +1 more source

Effects of Interfacial Charges On Doped and Undoped HFOX Stack Layer with Tin Metal Gate Electrode For Nano-Scaled CMOS Generation [PDF]

Журнал нано- та електронної фізики, 2011
A comparison of the interfacial charges present in the high-k stacked gate dielectrics for Zr-doped HfOx and undoped HfOx samples with titanium nitride (TiN) metal gate electrode is reported here. The metal gate work function value (4.31 eV) for TiN gate
S. Chatterjee, Y. Kuo
doaj  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Multimodal Soft Surgical Robots Enabled by Eco‐Degradable, Sterilizable Polymers and Transient Electronics

Advanced Functional Materials, EarlyView.
A compostable PGS soft surgical robot with interchangeable modules integrates transient Mo tactile and Si thermal sensors for dual feedback. The device preserves its function after clinical‐grade sterilization, demonstrates stable actuation and cardiac tissue grasping with real‐time in vivo pulsatile monitoring, and biodegrades post‐use with soil‐safe, 
Minseong Chae, Kyung‐Sub Kim, Gyeong‐Seok Hwang, Jun‐Seok Shim, Sung‐Woo Kim, Yong‐Wu Kim, Jieun Han, Jae‐Young Bae, Jae‐Hwan Lee, Minjung Chae, Jooik Jeon, Joo‐Hyeon Park, You‐Jung Park, Ju‐Yong Lee, Sung‐Geun Choi, Min‐Ha Oh, Yong‐Joong Shin, Young‐In Ryu, Ji‐Woo Gu, Seong‐Yu Choi, Jeong‐Yun Sun, Jung Keun Hyun, Myoung‐Ryul Ok, Sang Yup Kim, Edyta Wyszkowska, Ju‐Young Kim, Kang‐Sik Lee, Seung‐Kyun Kang   +27 more
wiley   +1 more source

Chemically induced Fermi level pinning effects of high-k dielectrics on graphene. [PDF]

Sci Rep, 2018
Kim SY, Kim YJ, Jung U, Lee BH.
europepmc   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Broadening of Distribution of Trap States in PbS Quantum Dot Field-Effect Transistors with High-k Dielectrics. [PDF]

ACS Appl Mater Interfaces, 2017
Nugraha MI, Häusermann R, Watanabe S, Matsui H, Sytnyk M, Heiss W, Takeya J, Loi MA, Loi MA.   +8 more
europepmc   +1 more source