Results 21 to 30 of about 215,019 (207)

Charge trapping and detrapping in polymeric materials

open access: yes, 2009
Space charge formation in polymeric materials can cause some serious concern for design engineers as the electric field may severely be distorted, leading to part of the material being overstressed.
Chen, George, Xu, Zhiqiang
core   +1 more source

Optimization of Single-Sided Charge-Sharing Strip Detectors [PDF]

open access: yes, 2006
Simulation of the charge sharing properties of single-sided CZT strip detectors with small anode pads are presented. The effect of initial event size, carrier repulsion, diffusion, drift, trapping and detrapping are considered. These simulations indicate
Benoit, M   +6 more
core   +2 more sources

Sequence determinants of RNA G‐quadruplex unfolding by Arg‐rich regions

open access: yesFEBS Letters, EarlyView.
We show that Arg‐rich peptides selectively unfold RNA G‐quadruplexes, but not RNA stem‐loops or DNA/RNA duplexes. This length‐dependent activity is inhibited by acidic residues and is conserved among SR and SR‐related proteins (SRSF1, SRSF3, SRSF9, U1‐70K, and U2AF1).
Naiduwadura Ivon Upekala De Silva   +10 more
wiley   +1 more source

High resolution coherent population trapping on a single hole spin in a semiconductor [PDF]

open access: yes, 2013
We report high resolution coherent population trapping on a single hole spin in a semiconductor quantum dot. The absorption dip signifying the formation of a dark state exhibits an atomic physics-like dip width of just 10 MHz.
Brunner, Daniel   +8 more
core   +5 more sources

Dual targeting of RET and SRC synergizes in RET fusion‐positive cancer cells

open access: yesMolecular Oncology, EarlyView.
Despite the strong activity of selective RET tyrosine kinase inhibitors (TKIs), resistance of RET fusion‐positive (RET+) lung cancer and thyroid cancer frequently occurs and is mainly driven by RET‐independent bypass mechanisms. Son et al. show that SRC TKIs significantly inhibit PAK and AKT survival signaling and enhance the efficacy of RET TKIs in ...
Juhyeon Son   +13 more
wiley   +1 more source

Identification of Free and Bound Exciton States and Their Phase-Dependent Trapping Behavior in Lead Halide Perovskites

open access: yes, 2017
In this work we probe the sub-gap energy states within polycrystalline and single crystal lead halide perovskites to better understand their intrinsic photophysics behaviors.
Jasieniak, Jacek J.   +8 more
core   +1 more source

RTS amplitudes in decananometer MOSFETs: 3-D simulation study [PDF]

open access: yes, 2003
In this paper we study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single electron in defect states at the Si/SiO/sub 2/ interface of sub-100-nm (decananometer) MOSFETs employing three-dimensional (3-D) "atomistic ...
Asenov, A.   +3 more
core   +1 more source

PARP inhibitors induce a senescence phenotype in non‐small cell lung carcinoma cell lines

open access: yesFEBS Open Bio, EarlyView.
Talazoparib is the most potent inducer of senescence among different PARP1 inhibitors in human NSCLC cells. In the absence of PARP, no senescence phenotype was observed, demonstrating that PARP1 is necessary for the induction of senescence by this inhibitor.
Camille Huart   +7 more
wiley   +1 more source

Duplex Stainless Steel Laser‐Surface Textured: Stability in Brine Solution

open access: yesAdvanced Engineering Materials, EarlyView.
Controlled laser‐surface treatment (LST) of duplex DSS2205 steel is performed to increase its stability in brine solution under cyclic electrochemical assays. The superior protection with respect to flat and smooth panels is attributed to the presence of FeCr2O4 as the main protective oxide layer in the LST surface, after corrosion tests. The stability
Mohammad Rezayat   +5 more
wiley   +1 more source

Influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors [PDF]

open access: yes, 2003
The influence of interfacial nitrogen on edge charge trapping at the interface of gate oxide/drain extension in metal-oxide-semiconductor transistors was investigated.
Ang, CH   +5 more
core   +1 more source

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