Results 31 to 40 of about 217,231 (301)
The Electrostatic Ion Beam Trap : a mass spectrometer of infinite mass range [PDF]
, 2013 We study the ions dynamics inside an Electrostatic Ion Beam Trap (EIBT) and show that the stability of the trapping is ruled by a Hill's equation. This unexpectedly demonstrates that an EIBT, in the reference frame of the ions works very similar to a ...
Alexandre Vallette +6 more
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Nitrogen‐Doped Carbon Quantum Dots on Graphene for Field‐Effect Transistor Optoelectronic Memories
Advanced Electronic Materials, 2023 The development of field‐effect transistor‐based (FET‐based) non‐volatile optoelectronic memories is vital toward innovations necessary to improve computer systems.
Mahima Chaudhary +8 more
doaj +1 more source
Charge Trapping in Amorphous Dielectrics for Secure Charge Storage
ACS Applied Materials & Interfaces, 2021 The fundamental scientific ingredient in the current information society is charge trapping in dielectric materials. The current data storage device known as NAND flash is based on charge trapping in silicon nitride, and it has been widely used in semiconductor processing.
Seung Jae Baik, Hyunjung Shin
openaire +3 more sources
Consequences of anisotropy in electrical charge storage: application to the characterization by the mirror method of TiO2 rutile [PDF]
, 2008 This article is devoted first to anisotropic distributions of stored electric charges in isotropic materials, second to charge trapping and induced electrostatic potential in anisotropic dielectrics.
Attard C Bigarré J Hourquebie P +7 more
core +4 more sources
Charge Trapping Control in MOS Capacitors [PDF]
IEEE Transactions on Industrial Electronics, 2017 This paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and adequate voltage excitations are generated by a feedback loop to place the C-V curve at the desired target position. Experimental results
Domínguez Pumar, Manuel +6 more
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Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer
AIP Advances, 2013 A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps.
Nazek El-Atab +3 more
doaj +1 more source
Imaging Fermi-level hysteresis in nanoscale bubbles of few-layer MoS2
Communications Materials, 2023 The electrical stability and reliability of two-dimensional (2D) crystal-based devices are mainly determined by charge traps in the device defects. Although nanobubble structures as defect sources in 2D materials strongly affect the device performance ...
Dohyeon Jeon +3 more
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Nanoscale Research Letters, 2017 In this work, high-k composite TiAlO film has been investigated as charge-trapping material for nonvolatile memory applications. The annealing formed Al2O3-TiAlO-SiO2 dielectric stack demonstrates significant memory effects and excellent reliability ...
Wenchao Xu +11 more
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Silicon nanoparticle charge trapping memory cell [PDF]
physica status solidi (RRL) – Rapid Research Letters, 2014 AbstractA charge trapping memory with 2 nm silicon nanoparticles (Si NPs) is demonstrated. A zinc oxide (ZnO) active layer is deposited by atomic layer deposition (ALD), preceded by Al2O3 which acts as the gate, blocking and tunneling oxide. Spin coating technique is used to deposit Si NPs across the sample between Al2O3 steps.
El-Atab, N. +4 more
openaire +5 more sources
AIP Advances, 2023 Synaptic transistors using an indium–gallium–zinc oxide (IGZO) charge trap layer (CTL) have great potential for high-performance neuromorphic applications due to their excellent stability and high linearity in conductance modulation.
Junhyeong Park +2 more
doaj +1 more source