Results 21 to 30 of about 217,231 (301)

Studies on the effects of moisture and ageing on charge de-trapping properties of oil-impregnated pressboard based on IRC measurement

open access: yesHigh Voltage, 2019
The dielectric properties of oil-paper insulation degrade due to moisture ingression and ageing. This degradation significantly impacts the space charge accumulation and charge trapping behaviour in the insulation, which are vital parameters for ...
Nasirul Haque   +3 more
doaj   +1 more source

Importance of charge capture in interphase regions during readout of charge-coupled devices [PDF]

open access: yes, 2018
The current understanding of charge transfer dynamics in charge-coupled devices (CCDs) is that charge is moved so quickly from one phase to the next in a clocking sequence and with a density so low that trapping of charge in the interphase regions is ...
Bush, Nathan   +5 more
core   +3 more sources

A computational study on the charge-trapping characteristics of nano-silica-doped polydimethylsiloxane composites [PDF]

open access: yesAIP Advances
Widely used as an insulating material in power cables, polydimethylsiloxane (PDMS) requires improved dielectric properties. Doping with nanoparticles is recognized as a feasible modification method, in which changes in charge-trapping characteristics are
Yong Yang   +6 more
doaj   +1 more source

Investigating charge trapping in ferroelectric thin films through transient measurements

open access: yesFrontiers in Nanotechnology, 2022
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by
Suzanne Lancaster   +7 more
doaj   +1 more source

Improvement of Charge Injection Using Ferroelectric Si:HfO2 As Blocking Layer in MONOS Charge Trapping Memory

open access: yesIEEE Journal of the Electron Devices Society, 2018
Metal/ferroelectric-Si:HfO2/SiN/SiO2/Si structure was fabricated to investigate the charge trapping properties. This device enhances the carrier injection into the nitride from the silicon due to the spontaneous polarization in SiO2:HfO2 layer.
Hao Ji   +3 more
doaj   +1 more source

Charge trapping and detrapping in polymeric materials: Trapping parameters [PDF]

open access: yes, 2011
Space charge formation in polymeric materials can cause some serious concern for design engineers as the electric field may severely be distorted, leading to part of the material being overstressed.
George Chen   +4 more
core   +1 more source

Charge Carrier Trapping during Diffusion Generally Observed for Particulate Photocatalytic Films

open access: yesEnergies, 2021
Photo-excited charge carriers play a vital role in photocatalysts and photovoltaics, and their dynamic processes must be understood to improve their efficiencies by controlling them.
Kenji Katayama   +2 more
doaj   +1 more source

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors [PDF]

open access: yes, 2014
We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent with charge ...
Behnam, Ashkan   +8 more
core   +2 more sources

Improved charge-trapping properties of HfYON film for nonvolatile memory applications in comparison with HfON and Y 2O 3 films [PDF]

open access: yes, 2011
The charge-trapping properties of HfYON film are investigated by using the Al/HfYON/SiO 2/Si structure. The physical features of this film were explored by transmission electron microscopy and x-ray photoelectron spectroscopy.
Huang, XD, Lai, PT, Liu, L, Xu, JP
core   +1 more source

Analysis of Conduction and Charging Mechanisms in Atomic Layer Deposited Multilayered HfO2/Al2O3 Stacks for Use in Charge Trapping Flash Memories

open access: yesAdvances in Condensed Matter Physics, 2018
Method for characterization of electrical and trapping properties of multilayered high permittivity stacks for use in charge trapping flash memories is proposed. Application of the method to the case of multilayered HfO2/Al2O3 stacks is presented.
Nenad Novkovski   +3 more
doaj   +1 more source

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