Results 11 to 20 of about 217,231 (301)

Large memory window with low operating voltages using Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel

open access: yesElectronics Letters, 2021
A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low ...
Zhaohao Zhang   +7 more
doaj   +1 more source

Effects of Charge Carrier Trapping on Image Resolution of Multilayer Photoconductive Detectors: Application to Amorphous Selenium X-ray Detectors

open access: yesRadiation, 2022
The effects of charge carrier trapping on image resolution in multilayer photoconductive imaging detectors was analyzed by developing an analytical model for calculating the modulation transfer function (MTF) of the imaging detectors.
M. Zahangir Kabir
doaj   +1 more source

Space Charge Accumulation and Decay in Dielectric Materials with Dual Discrete Traps

open access: yesApplied Sciences, 2019
Charge trapping and de-trapping properties can affect space charge accumulation and electric field distortion behavior in polymers. Dielectric materials may contain different types of traps with different energy distributions, and it is of interest to ...
Zhaoliang Xing   +5 more
doaj   +1 more source

Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window

open access: yesIEEE Journal of the Electron Devices Society, 2022
The transparent floating gate memory based on zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by using one-step atom layer deposition of aluminia tunneling and ZnO charge-trap layers.
Ning Zhang   +6 more
doaj   +1 more source

Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model [PDF]

open access: yes, 2005
Present study aims to develop a clear insight on factors that influence space charge dynamics in solid dielectrics through a numerical simulation. The model used for the simulation is proposed by Alison and Hill [1] which describes charge dynamics as a ...
Chen, G, Loi, S H
core   +1 more source

Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

open access: yesIEEE Journal of the Electron Devices Society, 2018
The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric.
Hao Ji, Yehui Wei, Pengfei Ma, Ran Jiang
doaj   +1 more source

Trapped Charge Distribution in Nitride-Based Charge Trapping Memory Devices [PDF]

open access: yesECS Meeting Abstracts, 2010
Abstract not Available.
Jang-Sik Lee, Hyun Suk Jung
openaire   +1 more source

The decay of space charge in a glassy epoxy resin following voltage removal [PDF]

open access: yes, 2006
The PEA technique is used to measure the distribution of space charge in an epoxy resin after polarisation for one week at an applied field of 7.14kV/mm over a range of temperatures.
Cooper, E. S.   +5 more
core   +1 more source

High efficient catalytic degradation of tetracycline and ibuprofen using visible light driven novel Cu/Bi2Ti2O7/rGO nanocomposite::Kinetics, intermediates and mechanism [PDF]

open access: yes, 2019
The photoexcited charge carriers trapping was an effective way to generate a large number of active species like O-2(center dot-) and (OH)-O-center dot radicals to oxidize pharmaceutical molecules.
Acevedo, R.   +4 more
core   +1 more source

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

open access: yesIEEE Journal of the Electron Devices Society, 2022
E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT demonstrates a combination of ferroelectric polarization and charge trapping process in the ferro ...
Jui-Sheng Wu   +6 more
doaj   +1 more source

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