Results 11 to 20 of about 61,923 (261)

Effects of Charge Carrier Trapping on Image Resolution of Multilayer Photoconductive Detectors: Application to Amorphous Selenium X-ray Detectors

open access: yesRadiation, 2022
The effects of charge carrier trapping on image resolution in multilayer photoconductive imaging detectors was analyzed by developing an analytical model for calculating the modulation transfer function (MTF) of the imaging detectors.
M. Zahangir Kabir
doaj   +1 more source

Space Charge Accumulation and Decay in Dielectric Materials with Dual Discrete Traps

open access: yesApplied Sciences, 2019
Charge trapping and de-trapping properties can affect space charge accumulation and electric field distortion behavior in polymers. Dielectric materials may contain different types of traps with different energy distributions, and it is of interest to ...
Zhaoliang Xing   +5 more
doaj   +1 more source

Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window

open access: yesIEEE Journal of the Electron Devices Society, 2022
The transparent floating gate memory based on zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by using one-step atom layer deposition of aluminia tunneling and ZnO charge-trap layers.
Ning Zhang   +6 more
doaj   +1 more source

Trapping parameters comparison between cable sections from different service conditions by a new trapping-detrapping model [PDF]

open access: yes, 2014
Space charge formation will cause electric field enhancement at certain location in the polymeric materials, especially under HVDC insulation condition.
Xu, Yang   +5 more
core   +1 more source

Improvement of Charge Injection by Using Separated SiN as Charge Trapping Layer in MONOS Charge Trap Flash Memory

open access: yesIEEE Journal of the Electron Devices Society, 2018
The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric.
Hao Ji, Yehui Wei, Pengfei Ma, Ran Jiang
doaj   +1 more source

Hf-Based and Zr-Based Charge Trapping Layer Engineering for E-Mode GaN MIS-HEMT Using Ferroelectric Charge Trap Gate Stack

open access: yesIEEE Journal of the Electron Devices Society, 2022
E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT demonstrates a combination of ferroelectric polarization and charge trapping process in the ferro ...
Jui-Sheng Wu   +6 more
doaj   +1 more source

Studies on the effects of moisture and ageing on charge de-trapping properties of oil-impregnated pressboard based on IRC measurement

open access: yesHigh Voltage, 2019
The dielectric properties of oil-paper insulation degrade due to moisture ingression and ageing. This degradation significantly impacts the space charge accumulation and charge trapping behaviour in the insulation, which are vital parameters for ...
Nasirul Haque   +3 more
doaj   +1 more source

Modification of Space Charge Pattern and Charge Mobility of Low Density Polyethylene (LDPE) in the presence of Crosslinking Byproducts [PDF]

open access: yes, 2009
The formation of space charge in Crosslinked Polyethylene (XLPE) cable has always been related to the byproducts such as acetophenone, ?-methylstyrene and cumyl alcohol. In this paper, the argument is to be justified.
Nuriziani Hussin   +3 more
core   +1 more source

A computational study on the charge-trapping characteristics of nano-silica-doped polydimethylsiloxane composites [PDF]

open access: yesAIP Advances
Widely used as an insulating material in power cables, polydimethylsiloxane (PDMS) requires improved dielectric properties. Doping with nanoparticles is recognized as a feasible modification method, in which changes in charge-trapping characteristics are
Yong Yang   +6 more
doaj   +1 more source

Investigating charge trapping in ferroelectric thin films through transient measurements

open access: yesFrontiers in Nanotechnology, 2022
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by
Suzanne Lancaster   +7 more
doaj   +1 more source

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