Results 11 to 20 of about 50,543 (262)
Charge Trapping Control in MOS Capacitors [PDF]
This paper presents an active control of C-V characteristic for MOS capacitors based on Sliding Mode control and sigma-delta-modulation. The capacitance of the device at a certain voltage is measured periodically and adequate voltage excitations are generated by a feedback loop to place the C-V curve at the desired target position. Experimental results
Manuel Domínguez Pumar +6 more
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Trapped Charge Distribution in Nitride-Based Charge Trapping Memory Devices [PDF]
Abstract not Available.
Jang-Sik Lee, Hyun Suk Jung
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A charge‐trapping memory (CTM) field effect transistor (FET) featured with an Hf1.5Gd2O6 charge trapping layer and thin MoS2 channel are fabricated. Benefit from high defect densities of the Hf1.5Gd2O6 film, large memory windows are achieved under low ...
Zhaohao Zhang +7 more
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Space Charge Accumulation and Decay in Dielectric Materials with Dual Discrete Traps
Charge trapping and de-trapping properties can affect space charge accumulation and electric field distortion behavior in polymers. Dielectric materials may contain different types of traps with different energy distributions, and it is of interest to ...
Zhaoliang Xing +5 more
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The effects of charge carrier trapping on image resolution in multilayer photoconductive imaging detectors was analyzed by developing an analytical model for calculating the modulation transfer function (MTF) of the imaging detectors.
M. Zahangir Kabir
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The charge trapping characteristics in the metal-oxide-nitride-oxide-silicon memory with separated trapping layer were investigated. Charge injection was enhanced for the reduction of effective oxide thickness of the gate dielectric.
Hao Ji, Yehui Wei, Pengfei Ma, Ran Jiang
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Transparent Floating Gate Memory Based on ZnO Thin Film Transistor With Controllable Memory Window
The transparent floating gate memory based on zinc oxide (ZnO) thin film transistors (TFTs) was fabricated by using one-step atom layer deposition of aluminia tunneling and ZnO charge-trap layers.
Ning Zhang +6 more
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E-mode hybrid ferroelectric charge storage gate (FEG) GaN HEMTs have shown promising performances for future power GaN device applications. The FEG-HEMT demonstrates a combination of ferroelectric polarization and charge trapping process in the ferro ...
Jui-Sheng Wu +6 more
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Charge Trapping in Amorphous Dielectrics for Secure Charge Storage
The fundamental scientific ingredient in the current information society is charge trapping in dielectric materials. The current data storage device known as NAND flash is based on charge trapping in silicon nitride, and it has been widely used in semiconductor processing.
Seung Jae Baik, Hyunjung Shin
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The dielectric properties of oil-paper insulation degrade due to moisture ingression and ageing. This degradation significantly impacts the space charge accumulation and charge trapping behaviour in the insulation, which are vital parameters for ...
Nasirul Haque +3 more
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