Results 51 to 60 of about 61,923 (261)

Space charge behaviours in polyethylene under combined AC and DC electric fields

, 2014
Polyethylene has been one of the widely studied polymeric insulation materials. One of the major issues related to polymeric materials is the easy formation of space charge which may cause electric field enhancement. In this paper, a numerical simulation
C. Zhou, Zhou, Churui, G. Chen, Chen, George   +3 more
core   +1 more source

Charge noise and spin noise in a semiconductor quantum device [PDF]

, 2014
Self-assembled quantum dots are very attractive as the building blocks for quantum light sources and spin qubits. For instance, a single quantum dot is a robust, fast, narrow-linewidth source of single photons, features not shared by any other ...
Kuhlmann, Andreas V.
core   +1 more source

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si₃N₄)

Nanomaterials, 2023
Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is ...
Christoph Wilhelmer, Dominic Waldhoer, Lukas Cvitkovich, Diego Milardovich, Michael Waltl, Tibor Grasser   +5 more
doaj   +1 more source

Hydrogen‐Assisted Fracture of Iron‐Based Fe–Ni–Al Alloys

Advanced Engineering Materials, EarlyView.
Principal relations and fracture mechanisms of single‐phase and precipitate‐strengthened Fe–Ni–Al alloys subjected to prior electrochemical hydrogen charging are identified. The mechanisms of hydrogen effect on strength and microhardness are discussed, including hydrogen‐induced increase in microhardness and the role of hydrogen in fracture behavior ...
Nataliya Yadzhak, Olha Zvirko, Rostyslav Leshchak, Hryhoriy Nykyforchyn   +3 more
wiley   +1 more source

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]

, 2013
Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Martinez, Martial, Gaillardin, M., Goiffon, Vincent, Gaillardin, Marc, Estribeau, Magali, Paillet, Philippe, Goiffon, V., Girard, Sylvain, Marcandella, Claude, Magnan, Pierre, Martinez, M., Magnan, P.   +11 more
core   +1 more source

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

APL Materials
HfO2-based ferroelectric field-effect transistors (FeFETs) are regarded as one of the most promising non-volatile memory technologies in the future. However, the charge trapping phenomenon during the program/erase operation is still a challenge.
Tianqi Hao, Binjian Zeng, Zhijie Sun, Zhenguo Wang, Yongquan Jiang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao   +8 more
doaj   +1 more source

Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

Scientific Reports, 2017
The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap ...
Hyunsuk Woo, Sanghun Jeon
doaj   +1 more source

All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?

Advanced Materials Interfaces, 2022
Intrinsic charge transport in molecularly thin organic semiconducting crystals is critically sensitive to the quality of the interfaces required to perform the electrical measurements.
Lukas Renn, Lisa S. Walter, Kenji Watanabe, Takashi Taniguchi, R. Thomas Weitz   +4 more
doaj   +1 more source

Cathodic Cage Plasma Deposition of Nanostructured Cu–Fe–Se Coatings on Poly(methyl Methacrylate)

Advanced Engineering Materials, EarlyView.
Nanostructured Cu–Fe–Se coatings are deposited on PMMA by a modified cathodic cage plasma process, enabling low‐temperature deposition on polymer substrates. A transition from discontinuous to compact morphology is observed with temperature, with optimal properties at 200°C, where improved CuFeSe2‐type bonding, lowest sheet resistance, and favorable ...
V. S. S. Sobrinho, M. Naeem, T. H. C. Costa, M. S. Libório, J. C. A. Queiroz, C. B. B. Luna, R. R. M. Sousa, P. S. Vieira, E. M. Araújo   +8 more
wiley   +1 more source

Characteristics of Surface Charge Accumulation on Direct Current GIL Insulators Under Different Dominant Mechanisms Considering Surface Trapping Effect

Shanghai Jiaotong Daxue xuebao
The existing mathematical models for charge accumulation at the gas-solid interface can hardly illustrate some microscopic mechanisms, which need improvement.
WANG Yaogang, WANG Zheming, LI Ke, JIA Bowen, YANG Hua, YAN Wu, LU Wu
doaj   +1 more source