Results 51 to 60 of about 217,231 (301)

Learning-based physical models of room-temperature semiconductor detectors with reduced data

open access: yesScientific Reports, 2023
Room-temperature semiconductor radiation detectors (RTSD) have broad applications in medical imaging, homeland security, astrophysics and others. RTSDs such as CdZnTe, CdTe are often pixelated, and characterization of these detectors at micron level can ...
Srutarshi Banerjee   +4 more
doaj   +1 more source

Tribological Performance of 60NiTi Alloy Under Varying Contact Conditions and Elevated Temperatures in Linear Reciprocating Sliding

open access: yesAdvanced Engineering Materials, EarlyView.
This study investigates the tribological response of 60NiTi alloy under dry, water‐lubricated and high‐temperature conditions. The alloy exhibits decreasing wear volume and friction with increasing temperature due to the formation of protective oxide layers. The work clarifies dominant wear mechanisms and demonstrates the suitability of 60NiTi for high‐
Anthony Onyebuchi Okoani   +2 more
wiley   +1 more source

Transverse Scaling of Schottky Barrier Charge-Trapping Cells for Energy-Efficient Applications

open access: yesCrystals, 2020
This work numerically elucidates the effects of transverse scaling on Schottky barrier charge-trapping cells for energy-efficient applications. Together with the scaled gate structures and charge-trapping dielectrics, variations in bias conditions on ...
Hung-Jin Teng   +5 more
doaj   +1 more source

Interaction of Ladle Slag With Varying SiO2 Content and Recyclate‐Based MgO–C Refractories

open access: yesAdvanced Engineering Materials, EarlyView.
Ladle slags (CaO/Al2O3 = 1) with 1–20 wt% SiO2 were investigated in contact with industrial MgO–C refractories fabricated from fresh magnesia and 50 wt% recyclate. The sessile drop method at 1600°C reveals intensive gas formation, delayed slag infiltration in recyclate‐based samples, and, under high‐SiO2 slag, formation of a dense MgAl2O4‐rich ...
Anton Yehorov   +6 more
wiley   +1 more source

High‐Performance Nonvolatile Organic Field‐Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers

open access: yesAdvanced Science, 2017
Nonvolatile organic field‐effect transistor (OFET) memory devices based on pentacene/N,N′‐ditridecylperylene‐3,4,9,10‐tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n‐type P13 embedded in p‐
Wen Li   +8 more
doaj   +1 more source

Investigations on the effect of ageing on charge de-trapping processes of epoxy–alumina nanocomposites based on isothermal relaxation current measurements

open access: yesIET Nanodielectrics, 2020
In this study, the relationship between thermal ageing and charge trapping properties of epoxy-based nanocomposites has been investigated. With ageing, any dielectric material undergoes thorough degradation.
Subhajit Maur   +7 more
doaj   +1 more source

Localized charge injection in SiO_2 films containing silicon nanocrystals [PDF]

open access: yes, 2001
An atomic-force microscope (AFM) is used to locally inject, detect, and quantify the amount and location of charge in SiO2 films containing Si nanocrystals (size ~2–6 nm).
Atwater, Harry A.   +4 more
core  

Single-charge escape processes through a hybrid turnstile in a dissipative environment [PDF]

open access: yes, 2010
We have investigated the static, charge-trapping properties of a hybrid superconductor---normal metal electron turnstile embedded into a high-ohmic environment.
Alexander B Zorin   +13 more
core   +2 more sources

Cathodic Cage Plasma Deposition of Nanostructured Cu–Fe–Se Coatings on Poly(methyl Methacrylate)

open access: yesAdvanced Engineering Materials, EarlyView.
Nanostructured Cu–Fe–Se coatings are deposited on PMMA by a modified cathodic cage plasma process, enabling low‐temperature deposition on polymer substrates. A transition from discontinuous to compact morphology is observed with temperature, with optimal properties at 200°C, where improved CuFeSe2‐type bonding, lowest sheet resistance, and favorable ...
V. S. S. Sobrinho   +8 more
wiley   +1 more source

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4)

open access: yesNanomaterials, 2023
Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is ...
Christoph Wilhelmer   +5 more
doaj   +1 more source

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