Results 51 to 60 of about 50,543 (262)

Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

Scientific Reports, 2017
The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap ...
Hyunsuk Woo, Sanghun Jeon
doaj   +1 more source

On the Effect of Creep on Local Lattice Orientation in Single‐Crystal Ni‐Based Superalloy Microstructures

Advanced Engineering Materials, EarlyView.
During creep of a single‐crystal Ni‐based superalloy, the overall crystal orientation is observed to remain constant while the microstructure evolves. Despite the lack of macroscopic rotation, small (<1°) rotations are observed on the submicron size scale and are accommodated by counteracting rotations over the scale of several micrometers.
E. J. Payton, E. B. Dursun, G. Eggeler, L. Agudo Jácome   +3 more
wiley   +1 more source

All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?

Advanced Materials Interfaces, 2022
Intrinsic charge transport in molecularly thin organic semiconducting crystals is critically sensitive to the quality of the interfaces required to perform the electrical measurements.
Lukas Renn, Lisa S. Walter, Kenji Watanabe, Takashi Taniguchi, R. Thomas Weitz   +4 more
doaj   +1 more source

Superlubricity and Corrosion Inhibition Properties of Solvate Ionic Liquids in Hybrid Carbon Fiber Reinforced Plastic–Steel Interfaces

Advanced Engineering Materials, EarlyView.
Solvate ionic liquids lubrication reduced the coefficient of friction by ∼60% compared to dry sliding, reaching steady‐state values as low as 0.04–0.05. Corrosion weight‐loss measurements in 1 M HCl further demonstrated significant inhibition behavior, with only 100 ppm of [Li(G3)][TFSI] (∼68.5 μL/L) reducing corrosion‐product weight loss by 63 ...
Sameh Dabees, Timothy Harte, Bhagya Dharmasiri, Y. Athulya Wickramasingha, David J. Hayne, Daniel J. Eyckens, Luke C. Henderson   +6 more
wiley   +1 more source

Experimental investigation on optical vortex tweezers for microbubble trapping

Open Physics, 2018
In this paper, we investigated the microbubble trapping using optical vortex tweezers. It is shown that the microbubble can be trapped by the vortex optical tweezers, in which the trapping light beam is of vortex beam.
Zhou Xiaoming, Chen Ziyang, Liu Zetian, Pu Jixiong   +3 more
doaj   +1 more source

Enhanced Ultrasound Transmission Through Aberration Layers Using Space‐Coiling Acoustic Metamaterials

Advanced Engineering Materials, EarlyView.
Enhancing ultrasound transmission through an aberration layer exhibiting mismatched impedance with the surrounding medium possesses great implications in imaging and treatment. In this study, we show that a space‐coiling acoustic metamaterial with judiciously tailored structural profile can help improve impedance matching.
Maral Ghanami, Hengzhe Ren, Erqian Dong, Ashkan Ghanbarzadeh‐Dagheyan, Chen Shen   +4 more
wiley   +1 more source

Charge trapping and detrapping in polymeric materials: Trapping parameters [PDF]

Journal of Applied Physics, 2011
Space charge formation in polymeric materials can cause some serious concern for design engineers as the electric field may severely be distorted, leading to part of the material being overstressed. This may result in material degradation and possibly premature failure at the worst.
Zhou, Tian-chun, Chen, George, Liao, Rui-jin, Xu, Zhiqiang   +3 more
openaire   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors

Nature Communications
The non-volatile spontaneous ferroelectric polarization field serves as a cornerstone for applying ferroelectric materials in electronic devices, yet it is frequently mitigated by charge trapping at defect sites. Achieving an effective transition between
Enlong Li, Weixin He, Ruixue Wang, Chi Zhang, Hongmiao Zhou, Yu Liu, Yijia Yuan, Kian Ping Loh, Junhao Chu, Wenwu Li   +9 more
doaj   +1 more source

Polyoxometalates‐Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse

Advanced Electronic Materials, 2018
Employing flash memories that function as the analogue synapse cleft for implementation of neural systems is a popular approach. For practical application in synapse mimicking, ambipolar trapping of both holes and electrons enables the weight updated ...
Xiaoli Chen, Jingyi Pan, Jingjing Fu, Xin Zhu, Chen Zhang, Li Zhou, Yan Wang, Ziyu Lv, Ye Zhou, Su‐Ting Han   +9 more
doaj   +1 more source