Results 61 to 70 of about 217,231 (301)

Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors

, 2005
We measured the bias stress characteristics of poly(thiophene) semi-crystalline thin-film transistors (TFTs) as a function stress times, gate voltages and duty-cycles.
A. Salleo, F. Endicott, R. A. Street, Rep D. B. A.   +3 more
core   +1 more source

Low noise charge injection in the CCD22 [PDF]

, 2004
The inclusion of a charge injection structure on a charge coupled device (CCD) allows for the mitigation of charge transfer loss which can be caused by radiation induced charge trapping defects.
Abbey, AF, Burt, DJ, Holland, AD, Hutchinson, IB, Morris, D, Pool, P, Smith, DR   +6 more
core   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

Advanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu, Christof Wöll, Stefan Bräse   +2 more
wiley   +1 more source

Coupling effects of interface charge trapping and polarization switching in HfO2-based ferroelectric field effect transistors

APL Materials
HfO2-based ferroelectric field-effect transistors (FeFETs) are regarded as one of the most promising non-volatile memory technologies in the future. However, the charge trapping phenomenon during the program/erase operation is still a challenge.
Tianqi Hao, Binjian Zeng, Zhijie Sun, Zhenguo Wang, Yongquan Jiang, Qiangxiang Peng, Shuaizhi Zheng, Yichun Zhou, Min Liao   +8 more
doaj   +1 more source

Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor

Scientific Reports, 2017
The carrier transport and device instability of amorphous oxide semiconductor devices are influenced by defects that are exponentially distributed in energy, because of amorphous phase channels and front/back interfaces with a large number of sub-gap ...
Hyunsuk Woo, Sanghun Jeon
doaj   +1 more source

All About the Interface: Do Residual Contaminants at A High‐Quality h‐BN Monolayer Perylene Diimide Interface Cause Charge Trapping?

Advanced Materials Interfaces, 2022
Intrinsic charge transport in molecularly thin organic semiconducting crystals is critically sensitive to the quality of the interfaces required to perform the electrical measurements.
Lukas Renn, Lisa S. Walter, Kenji Watanabe, Takashi Taniguchi, R. Thomas Weitz   +4 more
doaj   +1 more source

Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D `Atomistic' simulation study [PDF]

, 2000
In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs.
Asenov, A., Balasubramaniam, R., Brown, A.R., Davies, J.H., Saini, S.   +4 more
core   +1 more source

Rational Fine‐Tuning of MOF Pore Metrics: Enhanced SO2 Capture and Sensing with Optimal Multi‐Site Interactions

Advanced Functional Materials, EarlyView.
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing, Abdulrahman Mohabbat, István Boldog, Jens Möllmer, Marcus Lange, Yulyan Haiduk, Tobias Heinen, Vladimir Pankov, Oliver Weingart, Christoph Janiak   +9 more
wiley   +1 more source

Characteristics of Surface Charge Accumulation on Direct Current GIL Insulators Under Different Dominant Mechanisms Considering Surface Trapping Effect

Shanghai Jiaotong Daxue xuebao
The existing mathematical models for charge accumulation at the gas-solid interface can hardly illustrate some microscopic mechanisms, which need improvement.
WANG Yaogang, WANG Zheming, LI Ke, JIA Bowen, YANG Hua, YAN Wu, LU Wu
doaj   +1 more source

Lattice and superexchange effects in doped CMR manganites

, 2003
We report on the influence of the lattice degrees of freedom on charge, orbital and spin correlations in colossal magnetoresistance (CMR) manganites. For the weakly doped compounds we demonstrate that the electron-phonon coupling promotes the trapping of
Alexander Weiße, Booth, Holger Fehske, Khaliullin, Millis, Weiße, Zener   +6 more
core   +1 more source