Results 61 to 70 of about 61,923 (261)

Molecular Dynamics Studies of Shape Memory Polymers: From Bead–Spring Models to Atomistic Simulations

Advanced Engineering Materials, EarlyView.
Coarse‐grained (left) and atomistic (right) models of the shape memory polymer ESTANE ETE 75DT3 are shown schematically. The two representations bridge molecular detail and mesoscopic description. Both models capture shape memory behavior, linking segmental mobility and conformational relaxation of anisotropic chains to macroscopic recovery, and ...
Fathollah Varnik
wiley   +1 more source

Enhanced Radiation-Induced Narrow Channel Effects in Commercial 0.18 μm Bulk Technology [PDF]

, 2011
Total ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P ...
Goiffon, Vincent, Philippe Paillet, Gaillardin, Marc, Sylvain Girard, Girard, Sylvain, Pierre Magnan, Marc Gaillardin, Martinez, Martial, Gaillardin, M., Paillet, P., Martial Martinez, Paillet, Philippe, Vincent Goiffon, Magnan, Pierre, Martinez, M.   +14 more
core   +1 more source

Experimental investigation on optical vortex tweezers for microbubble trapping

Open Physics, 2018
In this paper, we investigated the microbubble trapping using optical vortex tweezers. It is shown that the microbubble can be trapped by the vortex optical tweezers, in which the trapping light beam is of vortex beam.
Zhou Xiaoming, Chen Ziyang, Liu Zetian, Pu Jixiong   +3 more
doaj   +1 more source

Encyclopedia of 2D β′‐In2Se3 Growth Using Chemical Vapor Deposition: The Effects of Synthesis Parameters Onto Material Quality

Advanced Engineering Materials, EarlyView.
A distinct semi‐confined inner‐tube chemical vapor deposition geometry enables reproducible, large‐area growth of phase‐pure 2D β′‐In2Se3 from InI + Se precursors. Engineering local vapor transport and optimizing precursor delivery and temperature–time conditions yield uniform continuous films.
Dasun P. W. Guruge, P. Sanju S. Panawala, Joseph F. S. Fernando, Zhenhuan Chen, Chao Zhang, Dong‐Chen Qi, Liangzhi Kou, Konstantin L. Firestein, Dmitri V. Golberg   +8 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Anomalous Phenomena in Solid Dielectrics under High Electric Fields (Keynote)

, 2009
Solid dielectrics have been used extensively in electrical and electronic industries. In the power industry, ultra high voltage transmission and cost saving of power equipment often result in that the dielectrics are operating under high electric fields.
G Chen, Chen, George
core   +1 more source

Interfacial Characteristics of Space Charge in Multi-layer LDPE [PDF]

, 2008
This paper reports on the investigation into space charge characteristics at interfaces of multi-layer polymeric materials. Planar low density polyethylene (LDPE) samples were used in this study. DC voltage up-to 10 kV was applied to the sample and space
Z. Xu, Xu, Zhiqiang, G. Chen, Chen, George   +3 more
core   +1 more source

Polarity-dependent ferroelectric modulations in two-dimensional hybrid perovskite heterojunction transistors

Nature Communications
The non-volatile spontaneous ferroelectric polarization field serves as a cornerstone for applying ferroelectric materials in electronic devices, yet it is frequently mitigated by charge trapping at defect sites. Achieving an effective transition between
Enlong Li, Weixin He, Ruixue Wang, Chi Zhang, Hongmiao Zhou, Yu Liu, Yijia Yuan, Kian Ping Loh, Junhao Chu, Wenwu Li   +9 more
doaj   +1 more source

Polyoxometalates‐Modulated Reduced Graphene Oxide Flash Memory with Ambipolar Trapping as Bidirectional Artificial Synapse

Advanced Electronic Materials, 2018
Employing flash memories that function as the analogue synapse cleft for implementation of neural systems is a popular approach. For practical application in synapse mimicking, ambipolar trapping of both holes and electrons enables the weight updated ...
Xiaoli Chen, Jingyi Pan, Jingjing Fu, Xin Zhu, Chen Zhang, Li Zhou, Yan Wang, Ziyu Lv, Ye Zhou, Su‐Ting Han   +9 more
doaj   +1 more source

Modeling of ballistic and trapping effects on the collection efficiency of holes and electrons separately for a planar mercuric iodide detector (HgI2)

Journal of Radiation Research and Applied Sciences, 2016
For the room temperature nuclear detector application, signal created in the detector depends not only to the energy of the incident photon but also to the position of the interaction.
Cedric E. Beogo, Ousmane I. Cisse, Luc T. Bambara, Francois Zougmore   +3 more
doaj   +1 more source