Results 231 to 240 of about 51,131 (290)

Coupled ferroelectric-anisotropic optoelectronic synapse for polarization-sensitive neuromorphic vision. [PDF]

Nat Commun
Huo J, Huo J, Gao J, Li L, Tun TTT, Peng J, Zheng H, Shi Y, Ang KW.   +8 more
europepmc   +1 more source

Overcoming Volatility in Ion Gel via Ag Doping for Nonvolatile Memristive Switching. [PDF]

ACS Omega
Nam J, Jeong J, Lee S, Kim Y, Jeon W.
europepmc   +1 more source

Middle Interlayer Engineered Ferroelectric NAND Flash Overcoming Reliability and Stability Bottlenecks for Next-Generation High-Density Storage Systems. [PDF]

Adv Sci (Weinh)
Kim G, Lee S, Choi H, Jung Y, Kim W, Park S, Seo K, Kim K, Kim W, Ha D, Shin M, Ahn J, Jeon S.   +12 more
europepmc   +1 more source

Oligosaccharide Block Copolymers with Branched Architectures and Channel Energy Level Optimizations for High-Performance Floating Gate Phototransistor Memory. [PDF]

ACS Appl Mater Interfaces
Yu PJ, Chen WC, Wu YS, Lin BH, Lin YC, Borsali R, Chen WC.   +6 more
europepmc   +1 more source

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Charge-Trapping-Type Flash Memory Device With Stacked High-$k$ Charge-Trapping Layer

IEEE Electron Device Letters, 2009
Operating properties of charge-trapping-type Flash memory devices with single or stacked structures on trapping layer are investigated in this letter. Improved operation and reliability characteristics can be achieved by adapting the stacked high-k films as charge-trapping layer due to the modification in the trap density and the energy level of traps,
null Ping-Hung Tsai, null Kuei-Shu Chang-Liao, null Te-Chiang Liu, null Tien-Ko Wang, null Pei-Jer Tzeng, null Cha-Hsin Lin, L.S. Lee, null Ming-Jinn Tsai   +7 more
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Charge Trapping Non Volatile Memory

ECS Transactions, 2009
The memory market is currently being evolving towards innovative device concepts which include the use of new materials and/or new structures. In this scenario, charge trapping represents one the most promising revolutionary concept in the frame of nonvolatile memory. Charge trapping-based devices feature quantum wells instead of metallic floating gate
LORENZI, PAOLO, RAO, ROSARIO, PALMA, Fabrizio, G. Ghidini, IRRERA, Fernanda   +4 more
openaire   +2 more sources

Transparent and Flexible Graphene Charge-Trap Memory

ACS Nano, 2012
A transparent and flexible graphene charge-trap memory (GCTM) composed of a single-layer graphene channel and a 3-dimensional gate stack was fabricated on a polyethylene naphtalate substrate below eutectic temperatures (~110 °C). The GCTM exhibits memory functionality of ~8.6 V memory window and 30% data retention per 10 years, while maintaining ~80 ...
Kim, Sung Min, Song, Emil B., Lee, Sejoon, Zhu, Jinfeng, Seo, David H., Mecklenburg, Matthew, Seo, Sunae, Wang, Kang L.   +7 more
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Nanographene charge trapping memory with a large memory window

Nanotechnology, 2015
Nanographene is a promising alternative to metal nanoparticles or semiconductor nanocrystals for charge trapping memory. In general, a high density of nanographene is required in order to achieve high charge trapping capacity. Here, we demonstrate a strategy of fabrication for a high density of nanographene for charge trapping memory with a large ...
Jianling, Meng, Rong, Yang, Jing, Zhao, Congli, He, Guole, Wang, Dongxia, Shi, Guangyu, Zhang   +6 more
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Masking trapped charge in flash memories

2015 53rd Annual Allerton Conference on Communication, Control, and Computing (Allerton), 2015
This paper studies defect memory cells and in particular partially stuck-at memory cells, which occur when charge is trapped in multi-level cells of non-volatile memories such as flash memories. If a cell can store the q levels 0, 1, …, q − 1, we say that it is partially stuck-at level s, where 1 ≤ s ≤ q − 1, if it can only store values which are at ...
Wachter-Zeh, Antonia, Yaakobi, Eitan
openaire   +1 more source