Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer
Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers
Nanomaterials-Based Charge Trapping Memory Devices
A Tunneling Dielectric Layer Free Floating Gate Nonvolatile Memory Employing Type‐I Core–Shell Quantum Dots as Discrete Charge‐Trapping/Tunneling Centers
Design of an Efficient Charge‐Trapping Layer with a Built‐In Tunnel Barrier for Reliable Organic‐Transistor Memory
Charge-Trapping Non-Volatile Memories
Outstanding memory characteristics with atomic layer deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 nanocomposite structures as the charge trapping layer
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
Organic nonvolatile memory devices utilizing intrinsic charge-trapping phenomena in an n-type polymer semiconductor
