Results 221 to 230 of about 52,531 (266)
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Observation of competing etches in chemically etched porous silicon
Journal of Applied Physics, 1997Transmission electron microscopy and scanning electron microscopy offer evidence that the purely chemical HF:HNO3:H2O “stain etch” used to form light-emitting porous silicon is actually composed of competing etches. A localized etch forms the porous nanostructure by propagation of a discrete reaction interface into the silicon substrate.
M. J. Winton, S. D. Russell, R. Gronsky
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Microwave induced chemical etching of CR-39 with KOH etchant: Comparison with chemical etching
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019Abstract Microwave induced chemical etching (MICE) has been successfully employed in reducing the etching duration using NaOH etchant. In this work, the MICE technique has been studied with KOH etchant to investigate the effect on the track development.
G.S. Sahoo +3 more
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Chemical Etches and Etch Pit Patterns on PbS Crystals
The Journal of Chemical Physics, 1957Chemical etches have been found which polish or remove thick surface layers from PbS crystals. One of these etches results in the formation of etch pits. The dissolving action of this etch on PbS, PbSe, and PbTe and the etch pit patterns formed by it on natural and synthetic PbS crystals are discussed.
R. F. Brebrick, W. W. Scanlon
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Correlation between the Grain Orientation Dependence of Color Etching and Chemical Etching
Microscopy and Microanalysis, 2012AbstractA gray cast iron specimen was investigated by color and chemical etching with optical and atomic force microscopy, and the effect of grain orientation on the effectiveness of etching was examined. It was proven that the grain orientation dependence of chemical and color etching is just the opposite, and that the specimen surface after color ...
Attila, Bonyár, Peter J, Szabó
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Numerical simulation of wet-chemical etching
2008The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus +3 more
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Study of Etch Rate and Surface Roughness in Chemical Etching of Stainless Steel
Key Engineering Materials, 2007In this study, stainless steel material (X5CrNi1810) was micromachined by chemical etching method. Ferric chloride was selected as etchant which is the most widely used etchant for iron-based materials. Four different etchant concentrations (32 °Bé, 36 °Bé, 40 °Bé and 44 °Bé) were used at various etching temperature.
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Principles of Chemical Etching — The Art and Science of Etching Crystals
1982The rate of reaction of a solution with a solid surface can depend distinctly on the crystallographic orientation of the reacting surfaces. This rate dependence is the basis of “etching”, which is then understood as the intentional utilization of specific chemical attack in order to reveal crystal symmetries and lattice defects.
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