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Chemical Etches and Etch Pit Patterns on PbS Crystals
The Journal of Chemical Physics, 1957Chemical etches have been found which polish or remove thick surface layers from PbS crystals. One of these etches results in the formation of etch pits. The dissolving action of this etch on PbS, PbSe, and PbTe and the etch pit patterns formed by it on natural and synthetic PbS crystals are discussed.
R. F. Brebrick, W. W. Scanlon
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Chemically etched micromirrors in silicon
Applied Physics Letters, 1988Purposely introduced pinholes can be processed so as to produce nearly spherical or paraboloidal depressions in (100) silicon by a two-step chemical etching procedure in KOH:water solutions. Regular arrays of f/1–f/10 specularly reflecting micromirrors can be fabricated.
D. L. Kendall +4 more
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Numerical simulation of wet-chemical etching
2008The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus +3 more
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Extended Abstracts of the 1975 International Conference on Solid State Devices and Materials, 1975
A new method for etching by a plasma technique has been developed. Active species with a long lifetime are created by the discharge of CF4-O2 mixture and transported from the discharge region to the reaction region where samples are etched. Consequently, the immersion of the samples in the plasmas can be avoided and the condition of etching process can
Yasuhiro Horiike, Masahiro Shibagaki
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A new method for etching by a plasma technique has been developed. Active species with a long lifetime are created by the discharge of CF4-O2 mixture and transported from the discharge region to the reaction region where samples are etched. Consequently, the immersion of the samples in the plasmas can be avoided and the condition of etching process can
Yasuhiro Horiike, Masahiro Shibagaki
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Principles of Chemical Etching — The Art and Science of Etching Crystals
1982The rate of reaction of a solution with a solid surface can depend distinctly on the crystallographic orientation of the reacting surfaces. This rate dependence is the basis of “etching”, which is then understood as the intentional utilization of specific chemical attack in order to reveal crystal symmetries and lattice defects.
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Structuring of Si into Multiple Scales by Metal-Assisted Chemical Etching
Advanced Materials, 2021Dahl-Young Khang
exaly