Results 251 to 260 of about 70,763 (310)
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Chemical etching of Nitinol stents
Acta of bioengineering and biomechanics, 2013Acta of Bioengineering and Biomechanics; 04/2013; ISSN 1509 ...
Katona, Bálint +4 more
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Journal of The Electrochemical Society, 1984
Developpement d'un nouveau systeme HCl:CH 3 COOH:K 2 Cr 2 O 7 pour l'attaque chimique de GaAs. Classement en deux regions A et B selon les caracteristiques de l'attaque. Dans la region A le processus est limite par la vitesse de reaction chimique tandis que dans la region B le processus est limite par la ...
Sadao Adachi, Kunishige Oe
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Developpement d'un nouveau systeme HCl:CH 3 COOH:K 2 Cr 2 O 7 pour l'attaque chimique de GaAs. Classement en deux regions A et B selon les caracteristiques de l'attaque. Dans la region A le processus est limite par la vitesse de reaction chimique tandis que dans la region B le processus est limite par la ...
Sadao Adachi, Kunishige Oe
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International Conference on Indium Phosphide and Related Materials, 1990
The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing.
C.S. Sundararaman +2 more
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The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing.
C.S. Sundararaman +2 more
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Journal of The Electrochemical Society, 1988
Etude du polissage chimique de supports Ge destines a la croissance epitaxique de Ge destine a des cellules solaires tandems et a des photodetecteurs a grande longueur d ...
S. K. Ghandhi, J. E. Ayers
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Etude du polissage chimique de supports Ge destines a la croissance epitaxique de Ge destine a des cellules solaires tandems et a des photodetecteurs a grande longueur d ...
S. K. Ghandhi, J. E. Ayers
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Crystal Research and Technology, 1982
AbstractThe results on etching of sapphire substrates with different orientation are discussed. High temperature etching in hydrogen stream and etching in the mixture of H3PO4 and H2SO4 were used in experiments. The relation of etching rates for different sapphire orientations were established in both cases.
L. A. Marasina +3 more
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AbstractThe results on etching of sapphire substrates with different orientation are discussed. High temperature etching in hydrogen stream and etching in the mixture of H3PO4 and H2SO4 were used in experiments. The relation of etching rates for different sapphire orientations were established in both cases.
L. A. Marasina +3 more
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Chemical Etching of Silicon: IV . Etching Technology
Journal of The Electrochemical Society, 1976The etching of silicon in based systems proceeds by a sequential oxidation‐followed‐by‐dissolution process. In those composition regions where the solution is very low in and rich in , the rate‐limiting process is the oxidation step. Consequently, electron concentration, surface orientation, crystal defects, and catalysis by lower oxides of nitrogen ...
B. Schwartz, H. Robbins
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Chemical etching is very popular inexpensive technique to study dislocations on crystalline faces. The reason for formation of etch pits at the emergence of dislocations and various tests to confirm the formation of dislocation etch pits are discussed as the etch pit formations do not take place at the dislocations only. The morphology of etch pits and
M.J. Joshi, H.O. Jethva, B.B. Parekh
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M.J. Joshi, H.O. Jethva, B.B. Parekh
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Effect of grain orientation on chemical etching
Micron, 2012The effect of grain orientation on the effectiveness of pre-etching before color etching was investigated by the help of electron back scattering diffraction and atomic force microscopy in case of cast iron. Strong correlation was found between the angle between the specimen normal and the [001] orientation of the ferrite grains and the depth of the ...
Peter J, Szabó, Attila, Bonyár
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Observation of competing etches in chemically etched porous silicon
Journal of Applied Physics, 1997Transmission electron microscopy and scanning electron microscopy offer evidence that the purely chemical HF:HNO3:H2O “stain etch” used to form light-emitting porous silicon is actually composed of competing etches. A localized etch forms the porous nanostructure by propagation of a discrete reaction interface into the silicon substrate.
M. J. Winton, S. D. Russell, R. Gronsky
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Microwave induced chemical etching of CR-39 with KOH etchant: Comparison with chemical etching
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2019Abstract Microwave induced chemical etching (MICE) has been successfully employed in reducing the etching duration using NaOH etchant. In this work, the MICE technique has been studied with KOH etchant to investigate the effect on the track development.
G.S. Sahoo +3 more
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