Results 241 to 250 of about 191,419 (298)

Chemical Etching of Germanium

Journal of The Electrochemical Society, 1988
Etude du polissage chimique de supports Ge destines a la croissance epitaxique de Ge destine a des cellules solaires tandems et a des photodetecteurs a grande longueur d ...
S. K. Ghandhi, J. E. Ayers
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Chemical etching of InP

International Conference on Indium Phosphide and Related Materials, 1990
The chemical etching of InP by iodic acid (HIO/sub 3/) solutions of varying weight percentage has been characterized in detail. The concentration dependence of etch rate of activation energies, and of etch profile has been evaluated. Solutions below 20 wt.% concentration are reaction-rate limited and are found to be useful for InP processing.
C.S. Sundararaman, A. Mouton, J.F. Currie   +2 more
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Monolayer chemical beam etching

Journal of Crystal Growth, 1994
Abstract We have developed an etching process with real-time counting of each monolayer removed, thus achieving etching with monolayer precision and control. This is an exact reversal of molecular beam epitaxy or more specifically in this case, chemical beam epitaxy (CBE).
W.T. Tsang, T.H. Chiu, R.M. Kapre
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Chemical Etching

Chemical etching is very popular inexpensive technique to study dislocations on crystalline faces. The reason for formation of etch pits at the emergence of dislocations and various tests to confirm the formation of dislocation etch pits are discussed as the etch pit formations do not take place at the dislocations only. The morphology of etch pits and
M.J. Joshi, H.O. Jethva, B.B. Parekh
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Chemical etching and polishing of InP

Crystal Research and Technology, 1988
AbstractThis paper describes possibilities of several chemical preparations for the selective cleaning of InP surfaces. The investigations of the surface states after the chemical treatment were carried out by means of XPS measurements. A pre‐etching with (NH4)2S2O8:H2SO4:H2O and a polishing with 1% bromine in methanol produce optically smooth (100 ...
E. Kurth, A. Reif, V. Gottschalch, J Fenster, E Butter   +4 more
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Observation of competing etches in chemically etched porous silicon

Journal of Applied Physics, 1997
Transmission electron microscopy and scanning electron microscopy offer evidence that the purely chemical HF:HNO3:H2O “stain etch” used to form light-emitting porous silicon is actually composed of competing etches. A localized etch forms the porous nanostructure by propagation of a discrete reaction interface into the silicon substrate.
M. J. Winton, S. D. Russell, R. Gronsky
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Dry etching of using chemically assisted ion beam etching

Semiconductor Science and Technology, 1997
The dry etching characteristics of grown by metal-organic chemical vapour deposition have been investigated using chemically assisted ion beam etching with an Ar ion beam and gas. Etch rates were investigated as a function of Al composition in ranging from GaN to AlN and as a function of ion beam energy.
A T Ping, M Asif Khan, I Adesida
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Numerical simulation of wet-chemical etching

2008
The concentration of dissolved material in an etch-hole is computed in order to construct a numerical simulation of wet-chemical etching. Using a number of assumptions an approximate convection-diffusion equation is formulated. In this way, analytical descriptions for the concentration in different parts of the domain are obtained.
Driesen, Cornelus Hendricus, Kuerten, Johannes G.M., Kuiken, H.K., Zandbergen, P.J.   +3 more
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Chemical Etches and Etch Pit Patterns on PbS Crystals

The Journal of Chemical Physics, 1957
Chemical etches have been found which polish or remove thick surface layers from PbS crystals. One of these etches results in the formation of etch pits. The dissolving action of this etch on PbS, PbSe, and PbTe and the etch pit patterns formed by it on natural and synthetic PbS crystals are discussed.
R. F. Brebrick, W. W. Scanlon
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Chemical etching of aluminium

Journal of Materials Processing Technology, 2008
Abstract Chemical etching is employed as micromachining manufacturing process to produce micron-size components. The process applies a strong chemical etchant solution to remove unwanted part in the workpiece material. It is basically a corrosion-controlled process.
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