Results 271 to 280 of about 37,508 (305)

A Current-Injection Class-E Power Amplifier

IEEE Microwave and Wireless Components Letters, 2020
A novel class-E power amplifier (PA) using a current-injection (CI) technique is presented in this letter. An auxiliary current source, which injects the current into the load during each turn-off period of switching transistors, is introduced into the conventional class-E PA.
Jian-Chang Du, Zhi-Gong Wang, Jian Xu, Yi-Fan Yang   +3 more
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Analysis of dynamic frequency response of class E amplifier

2009 IEEE International Symposium on Circuits and Systems, 2009
A dynamic response of the output voltage to the input supply voltage V DD of a class E amplifier is derived with modeling the circuit by a low-frequency model and a high-frequency model. If the perturbation frequency is much lower than the switching frequency, the state-space averaging model of the class E amplifier can be approximated as a single ...
Tadashi Suetsugu, Marian K. Kazimierczuk
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A cascode modulated class-E power amplifier for wireless communications

Microelectronics Journal, 2011
A cascode modulated CMOS class-E power amplifier (PA) is presented in this paper. It is shown that by applying a modulated signal to the gate of the cascode transistor the output power is modulated. The main advantage of the proposed technique is a high 35dB output power dynamic range. The peak power added efficiency (PAE) is 35%.
Daniel Sira, Pia Thomsen, Torben Larsen
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Intermodulation products in the EER technique applied to class-E amplifiers

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004
Envelope Elimination and Restoration is a relatively old but attractive transmitter technique for high efficiency linear amplification of variable envelope RF signals. EER employs switching mode power amplifiers, which are extremely nonlinear but efficient, and the concept of supply voltage modulation to achieve linear performance.
Milosevic, D., Tang, van der, J.D., Roermund, van, A.H.M.   +2 more
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On the feasibility of application of class E RF power amplifiers in UMTS

Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03., 2003
This paper investigates the feasibility of the application of class E RF power amplifiers in UMTS. A typical class E circuit has been designed and simulated, in conjunction with a linearization scheme based on the EER principle. The EER testbench uses ideal building blocks, since the emphasis is on the operation of the amplifier itself. Three different
Milosevic, D., Tang, van der, J.D., Roermund, van, A.H.M.   +2 more
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Transmission-line microwave Class-E amplifier

15th International Conference on Microwaves, Radar and Wireless Communications (IEEE Cat. No.04EX824), 2004
A new technique for constructing the output network of a microwave Class-E power amplifier is proposed. The amplifier has been designed, fabricated and tested. At the frequency of 820 MHz, output power of 410 mW, with power-added efficiency of 70% and input DC voltage of 5 V, was demonstrated.
V.A. Printsovskii, V.G. Krizhanovski
openaire   +1 more source

A 60GHz Class-E Power Amplifier in SiGe

2006 IEEE Asian Solid-State Circuits Conference, 2006
A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match.
Alberto Valdes-Garcia, Scott Reynolds, Ullrich R. Pfeiffer   +2 more
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Analysis of device performance in a class-E amplifier

(ICEEE). 1st International Conference on Electrical and Electronics Engineering, 2004., 2005
The Class-E amplifier is an interesting topology for several high frequency applications, since it has a simple structure and needs only one switch. Circuit efficiency can be further increased, when using soft commutation techniques. For the ZVS class-E amplifier, the parasitic output capacitance of the switch is the most critical design parameter ...
M. Cotorogea, M. Ponce, E. Guerrero
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Class E amplifier with inductive clamp circuit

RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits, 2005
A class E RF amplifier, which can operate into any load conditions without need for other additional circuitry to protect transistors, is introduced. This is provided by a new topology which incorporates inductive clamp circuitry to the basic class E amplifier circuit.
A. Eroglu, D. Lincoln
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Class-E amplifier with an inductive impedance inverter

IEEE Transactions on Industrial Electronics, 1990
A design procedure and experimental results are presented for a class-E amplifier with an inductive impedance inverter. Experimental waveforms and characteristics measured at 1 MHz with an IRF620 MOSFET are given for the amplifier, which can operate under zero-voltage switching conditions for load resistances ranging from a short circuit to an open ...
M.K. Kazimierczuk, X.T. Bui
openaire   +1 more source