Results 271 to 280 of about 557,267 (345)

Class-E CMOS power amplifiers for RF applications

Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03., 2003
CMOS radio frequency class-E power amplifiers (PA) for GMSK/GFSK modulations have been designed and fabricated using 0.25/0.35/spl mu/m technologies. The operating frequencies are centred at 1.2GHz and 2.65GHz with 24-26dBm output power. Mode locking techniques are employed for both designs, in order to reduce the driving requirement.
Tang Tat Hung, Mourad N. El-Gamal
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A method for predicting the ZVS condition for the class E amplifier

2002 IEEE International Symposium on Circuits and Systems. Proceedings (Cat. No.02CH37353), 2003
A method for predicting the ZVS condition before turning the switch on is presented for the class E amplifier operating with D=0.5. The prediction is obtained in realtime by observing the switch current waveform and the shunt capacitor current waveform with a simple analog-digital circuit. Using this method, a control circuit that ensures ZVS condition
Tadashi Suetsugu, Marian K. Kazimierczuk
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An RF Choke-Less Class E Power Amplifier

IEEE Transactions on Circuits and Systems II: Express Briefs, 2020
An RF-choke (RFC) is a crucial but difficult-to-realize component of all Class-E power amplifiers (PAs). A Class-DE PA does not require an RFC but requires two non-overlapping clocks for its operation. This brief presents an RFC-less Class-E PA which operates with a single 50% duty-cycled clock.
Gagan Deep Singh, Nagarjuna Nallam
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Floating Bulk Cascode Class-E Power Amplifier

IEEE Transactions on Circuits and Systems II: Express Briefs, 2019
In this brief, the switching behavior of the cascode topology is improved through the floating bulk (FB) technique. Although the cascode structure has the advantage of reducing voltage stress on transistors, its parasitic elements increase power loss.
Ali Reza Dehqan, Siroos Toofan, Hadi Lotfi   +2 more
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Design and optimization of CMOS class-E power amplifier

Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03., 2003
A new class-E power amplifier design approach, in which the design problem is posed as combinatory optimization, is described. To incorporate the frequency dependent components in the optimization procedure, a simplified frequency domain simulation method was proposed to speed up the simulation.
Zhan Xu, Ezz I. El-Masry
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Analysis of dynamic frequency response of class E amplifier

2009 IEEE International Symposium on Circuits and Systems, 2009
A dynamic response of the output voltage to the input supply voltage V DD of a class E amplifier is derived with modeling the circuit by a low-frequency model and a high-frequency model. If the perturbation frequency is much lower than the switching frequency, the state-space averaging model of the class E amplifier can be approximated as a single ...
Tadashi Suetsugu, Marian K. Kazimierczuk
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A CMOS class-E Power Amplifiers with Power Control

2007 IEEE International Symposium on Circuits and Systems, 2007
In this paper, a CMOS class-E power amplifier with power control is presented. Its output power could be varied over a broad range with high efficiency by utilizing the combination of the parallel amplification technique and the drain modulation technique.
Tongqiang Gao, Dongmei Li, Baoyong Chi, Zhihua Wang 0001   +3 more
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A Current-Injection Class-E Power Amplifier

IEEE Microwave and Wireless Components Letters, 2020
A novel class-E power amplifier (PA) using a current-injection (CI) technique is presented in this letter. An auxiliary current source, which injects the current into the load during each turn-off period of switching transistors, is introduced into the conventional class-E PA.
Jian-Chang Du, Zhi-Gong Wang, Jian Xu, Yi-Fan Yang   +3 more
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Comparison of two Class-E Amplifiers for EER Transmitter

2005 IEEE International Symposium on Circuits and Systems, 2005
This paper compares two types of class E power amplifier and studies their applicability in an EER (envelope elimination and restoration) transmitter. In EER applications one of the main concerns is the modulation bandwidth of the supply voltage and DC bias current. It is shown here that a recently proposed parallel tuned class E dimensioning principle
Antti Heiskanen, Timo Rahkonen
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Class E Power Amplifiers

2001
It is desirable to obtain high RF power amplifier efficiency in many practical applications. At least one, if not all, of the following requirements is important: low power consumption (especially for battery-operated equipment), low temperature rise of the components, high reliability, small size, and light weight. Although the parasitic energy losses
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