Results 281 to 290 of about 557,267 (345)

Transmission-line microwave Class-E amplifier

15th International Conference on Microwaves, Radar and Wireless Communications (IEEE Cat. No.04EX824), 2004
A new technique for constructing the output network of a microwave Class-E power amplifier is proposed. The amplifier has been designed, fabricated and tested. At the frequency of 820 MHz, output power of 410 mW, with power-added efficiency of 70% and input DC voltage of 5 V, was demonstrated.
V.A. Printsovskii, V.G. Krizhanovski
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A 60GHz Class-E Power Amplifier in SiGe

2006 IEEE Asian Solid-State Circuits Conference, 2006
A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match.
Alberto Valdes-Garcia, Scott Reynolds, Ullrich R. Pfeiffer   +2 more
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Analysis of device performance in a class-E amplifier

(ICEEE). 1st International Conference on Electrical and Electronics Engineering, 2004., 2005
The Class-E amplifier is an interesting topology for several high frequency applications, since it has a simple structure and needs only one switch. Circuit efficiency can be further increased, when using soft commutation techniques. For the ZVS class-E amplifier, the parasitic output capacitance of the switch is the most critical design parameter ...
M. Cotorogea, M. Ponce, E. Guerrero
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Class E amplifier with inductive clamp circuit

RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits, 2005
A class E RF amplifier, which can operate into any load conditions without need for other additional circuitry to protect transistors, is introduced. This is provided by a new topology which incorporates inductive clamp circuitry to the basic class E amplifier circuit.
A. Eroglu, D. Lincoln
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High frequency class E power amplifier

Proceedings First International IEEE Symposium Intelligent Systems, 2003
A monolithic RF power amplifier has been designed to provide 10 dBm output power at 1GHz to a 50 ohm load from 2.8 V supply. The amplifier has been developed first at 5 MHz and then at 1GHz. 0.8 /spl mu/m SiGe BiCMOS and 0.35 /spl mu/m Si CMOS technologies are used.
M. Hristov, G. Dodeva, O. Antonova, A. Roussel   +3 more
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Class-E high efficiency power amplifiers

[1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems, 2003
Three switching mode power amplifiers are realized with collector (drain) efficiencies of 87%, 86% and 92% at 430 MHz/5 W, 100 MHz/12 W, and 5 MHz/62 W, respectively. These high efficiencies are achieved by the class-E technique and low insertion-loss load networks. Detailed design rules and major parameters are presented.
Q.-S. Tan, C. Ciotti, H.J. Schmitt
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Recent implementations of Class-E power amplifiers

2012 Japan-Egypt Conference on Electronics, Communications and Computers, 2012
This survey paper addresses the progress in class-E power amplifiers during the last decade, from 2000 - Present. Over 200 papers are analyzed in this survey. Both wide bandgap (e.g. SiC and GaN) and narrower bandgap (e.g. GaAs, and Si) devices are considered.
Ahmed Rajaie, Ahmed Khorshid, Ali Darwish   +2 more
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Analysis of the class E amplifier by an alternor technique

Microwave and Optical Technology Letters, 1994
AbstractAn altemor technique is introduced for the fast simulation of the output performance of the Class E amplifier. The transistor used in the class E amplifier is modeled as a two‐port network by the altemor technique. A six‐order matrix equation of the amplifier is obtained according to this model and the simple cut‐set and loop theory. The output
Chi‐Hung Li, Yu‐On Yam
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Electronically tunable class-E power amplifier

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002
The 20-W class-E power amplifier (PA) described here is electronically tunable from 19 to 31 MHz (ratio 1.67). This PA employs a single RF-power MOSFET and operates from 25 V. The output-tuning network employs fixed inductors and high-voltage MOSFETs for variable capacitors.
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Stabilization of Class E amplifiers with a diode network

AEU - International Journal of Electronics and Communications, 2010
Abstract A three-element stabilization network consisting of diode and series resonant circuit to eliminate the instabilities seen in the Class E amplifiers for all load conditions when dc supply voltage is varied over entire dynamic power and frequency ranges, has been introduced.
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