Results 221 to 230 of about 1,091,701 (330)

A Scalable Method for Cavity‐Enhanced Solid‐State Quantum Sensors

Advanced Science, EarlyView.
Photoluminescent color centres in diamond and hexagon boron nitride are powerful nanoscale solid‐state quantum sensors. Methods for integrating them into macroscopic structures that improve their sensitivity are highly sought after. This study demonstrates a low‐cost and scalable method for the fabrication of quantum sensor‐doped thin‐film cavities ...
Daniel J. Tibben, Roy Styles, David A. Broadway, Jean‐Philippe Tetienne, Daniel E. Gómez, Philipp Reineck   +5 more
wiley   +1 more source

A Fully Si-Compatible Ni/Si₃N₄/Al₂O₃/<i>p</i> ⁺ Poly-Si RRAM Device for Analog Synapse and Its System-Level Assessment toward Processing-in-Memory Applications. [PDF]

ACS Omega
Lee Y, Kim S, Kim S, Shim W, Kim S, Cho S.   +5 more
europepmc   +1 more source

Dissolution Study of Biodegradable Magnesium Silicide Thin Films for Transient Electronic Applications

Advanced Science, EarlyView.
Magnesium silicide (Mg2Si) is introduced as a narrow‐bandgap, biodegradable semiconductor for transient electronics. RF‐sputtered and annealed Mg2Si thin films show high intrinsic electrical conductivity and low thermal conductivity. The polycrystalline material undergoes hydrolysis in aquatic and composting environments with minimal cytotoxicity ...
Ji‐Woo Gu, Jun‐Seok Shim, Minjung Chae, Yoonseong Jung, Su‐Min Kim, Young‐In Ryu, Jae‐Hwan Lee, Sung‐Woo Kim, Kyung‐Sub Kim, Tae‐Woo Lee, Edyta Wyszkowska, Jungho Shin, Hyejin Jang, Ju‐Young Kim, Myoung‐Ryul Ok, Jong‐hyoung Kim, Jae‐Young Bae, Seung‐Kyun Kang   +17 more
wiley   +1 more source

Designing nonlinearity in a current-starved ring oscillator for reservoir computing hardware. [PDF]

Sci Rep
Tun NN, Sun S, Iizuka T, Yajima T.
europepmc   +1 more source

Atomic‐Scale Mechanisms of Multi‐Resistance States in HfOx‐Based RRAM: Evolution of Atomic Electric Fields and Oxygen Vacancies

Advanced Science, EarlyView.
Atomic‐scale mechanisms governing multilevel resistive switching in HfOx‐based RRAM are reveal through advanced TEM. Thermally driven m‐phase rotation ([101]↔[011]) enables selective oxygen vacancy migration, which reconstructs atomic electric fields and dictates conduction—from Schottky/Poole‐Frenkel emission to Ohmic transport.
Wen Sun, Yuyan Wang, Ruofei Hu, Yuyao Lu, Jun Xu, Xinyi Li, Bin Gao, He Qian, Jianshi Tang, Huaqiang Wu   +9 more
wiley   +1 more source

Ultracompact and large-bandwidth silicon modulator in a CMOS-compatible foundry. [PDF]

Nat Commun
Zhong H, Li J, He Y, Wang H, Chen Y, Zhang Y, Li X, Du Y, Su Y.   +8 more
europepmc   +1 more source

Multifunctional E‐Tattoos Based on Electrospun PVBVA Fibers Coated with Ti3C2Tx MXene for Energy Harvesting, Energy Storage, and Biometric Sensing

Advanced Science, EarlyView.
This study explores a novel E‐tattoo made from PVBVA fibers coated with Ti3C2Tx MXene. The device is designed to harvest energy directly from the human body, providing power for itself. The research demonstrates the E‐tattoo's capability for charge storage and its potential for health monitoring through integrated ECG and EMG sensing, all within a ...
Ajay Pratap, Fereshteh Rajabi Kouchi, Tony Valayil‐Varghese, Hailey Burgoyne, Attila Rektor, Michael Curtis, Miranda Lea Nelson, Francis N. Mokogwu, Corey M. Efaw, Josh Eixenberger, Allyssa Bateman, Benjamin C. Johnson, Brian Jaques, Zhangxian Deng, Kurtis Cantley, Christopher E. Shuck, David Estrada   +16 more
wiley   +1 more source

CMOS-compatible flash-gated thyristor-based neuromorphic module with small area and low energy consumption for in-memory computing. [PDF]

Sci Adv
Ko J, Im J, Kim J, Shin W, Koo RH, Park SH, Woo SY, Lee JH.   +7 more
europepmc   +1 more source

Wafer‐Scale Bandgap‐Tunable MoS2/PbS Phototransistors Enabled by Solution Processing

Advanced Science, EarlyView.
This work advances bandgap‐tunable MoS2/PbS phototransistors by introducing lateral heterojunctions, which enable superior tunable bandgap (1.24–0.61 eV) via Type‐II alignment. Plasma‐enhanced solution processing ensures uniform 4‐inch wafer‐scale fabrication with 97% yield.
Ziheng Tang, Chengqian Cui, Xiaoli Jing, Rui You, Mingjun Zhang, Jing Xu   +5 more
wiley   +1 more source

Hybrid ionic-electronic semiconductors for interface engineering of ultra-low-dark-current solution-processed SWIR photodetectors. [PDF]

Natl Sci Rev
Cao Y, Yang X, Wang Y, Chen J, Tang H, Liu C, Zhang K, Dong S, Cao Y, Huang F.   +9 more
europepmc   +1 more source