Results 231 to 240 of about 418,483 (315)

A Compendium of Logic Gates Based on Reconfigurable Three‐Independent‐Gate Transistors Realized in FDSOI Hardware

Advanced Electronic Materials, EarlyView.
This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer   +12 more
wiley   +1 more source

van der Waals dielectrics for threshold engineering in two-dimensional field effect transistors. [PDF]

Nat Commun
Sen D, Ravichandran H, Imam S, Ghosh S, Mukhopadhyay K, Bashir MY, Ie TS, Mazanek V, Luxa J, Chen C, Redwing JM, Sofer Z, Sahay S, Kanatzidis MG, Das S.   +14 more
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Wafer-Scale Electrical Characterization of Al/Al_<i>x</i>O_<i>y</i>/Al Tunnel Junctions for Process Monitoring at Room Temperature. [PDF]

Nanomaterials (Basel)
Lang SJK, Eisele I, Weber J, Schewski A, Music E, Maiwald A, Hahn M, Zahn D, Luo Z, Nebrich L, Schoof B, Mayer T, Sturm-Rogon L, Lerch W, Pereira RN, Kutter C.   +15 more
europepmc   +1 more source

Aluminum‐Substituted Yttrium Iron Garnet Films With Perpendicular Anisotropy Grown on Silicon by Sputtering

Advanced Electronic Materials, EarlyView.
Ultrathin Al‐substituted YIG films with perpendicular magnetic anisotropy are sputter‐grown directly on Si/SiOx using an ultrathin AlOx buffer layer. Al diffusion reduces the saturation magnetization and stabilizes PMA via magnetoelastic effects. Pt/Al:YIG bilayers exhibit strong spin Hall magnetoresistance and efficient spin–orbit torque switching ...
Matteo Fettizio, Stefano Fedel, Saúl Estandía, Jesus Alejandro De Sousa, Can Onur Avci   +4 more
wiley   +1 more source

On-chip microwave oscillator in deep-subwavelength scale based on spoof plasmonic skyrmions. [PDF]

Natl Sci Rev
Wang WZ, Liu Y, Zhang X, Gao ZL, Tang XS, Cui TJ.   +5 more
europepmc   +1 more source

Ultra‐Low Power Consumption and Highly Durability in Sm:HfO2 Thin Film Ferroelectric Memristor for Edge Detection

Advanced Electronic Materials, EarlyView.
ABSTRACT With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan   +4 more
wiley   +1 more source

An Integrated Photo-Magnetic Sensor Chip Using Giant Magnetoresistance (GMR) and Light-Dependent Resistor (LDR) Technologies Based on Microfabrication Compatibility. [PDF]

Micromachines (Basel)
Sun X, Chen X, Li J, Ren C, Tian T, Guo A, Lei C.   +6 more
europepmc   +1 more source

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source