Results 91 to 100 of about 389,945 (331)

MINI Logic 1-Bit Adder: A Comparison with Hybrid NMOS-Memristor-Logic Styles Using Ta2O5/Al2O3 Based RRAM Device

Advances in Electrical and Computer Engineering
This study addresses the demand for more efficient logic circuits by focusing on reducing area, power consumption, and delay. As conventional CMOS technology faces scaling and efficiency limitations, integrating emerging memory technologies like ...
NITHYA, N., PARAMASIVAM, K.
doaj   +1 more source

Experimental characterization of CMOS photonic devices [PDF]

, 2016
Current electrical interconnects in super-computers and high-performance processors present a bottleneck in terms of bandwidth and power consumption. A migration to the optical domain in order to cope with the connectivity between units (e.g.
Gómez Gonzalvo, Alberto
core   +1 more source

Electrically Binary and Ternary Convertible CMOS Inverter and Logic Gate Using Complementary Field‐Effect Transistors Based on Vertically Stacked MoS2/WSe2 n‐/p‐ Field‐Effect Transistors

Advanced Functional Materials, EarlyView.
In this work, a reconfigurable T‐CMOS inverter based on vertically stacked MoS2 and WSe2 MOSFETs with a gate‐tunable MoS2 resistor, enabling stable ternary logic, is demonstrated. The T‐CMOS inverter supports electrical switching between ternary and binary modes and is further extended to implement ternary NAND (NMIN) and NOR (NMAX) logic gates ...
Changwook Lee, Dongyoung Kim, Eunyeong Yang, Jiwon Ma, Kibum Kang, Jiwon Chang   +5 more
wiley   +1 more source

Disorder robust, ultra-low power, continuous-wave four-wave mixing in a topological waveguide

Nanophotonics
Four-wave mixing is a widely used nonlinear process for wavelength conversion, parametric amplification and signal regeneration in various Kerr devices, which enables wavelength-tunability and lower-power operation in compact optical systems.
Choi Ju Won, Sohn Byoung-Uk, Chen George F.R., Gao Hongwei, Mitchell William J., Ng Doris K.T., Tan Dawn T.H.   +6 more
doaj   +1 more source

CMOS image sensor [PDF]

, 2015
A CMOS image sensor 101 comprises an active layer 11 of a first conductivity type arranged to be reversed biased and a pixel 20 comprising a photosensitive element comprising a well 22 of a second conductivity type and a well 21 of the first conductivity
Stefanov, Konstantin
core  

Low power CMOS iImage sensor for face recognition [PDF]

, 2020
Imaging system is suitable for different purposes, depending upon their final application. Digital cameras, camcorders, webcams, security cameras or infrared (IR) cameras are well-known imaging systems.
Chan, Kit Heng, Ruslan, Siti Hawa
core  

Gaussian‐Sigmoid Reinforcement Transistors: Resolving Exploration‐Exploitation Trade‐Off Through Gate Voltage‐Controlled Activation Functions

Advanced Functional Materials, EarlyView.
The characteristics of a vertical n–p–i–p heterostructure transistor device, which exhibits a voltage‐tunable transition between Gaussian and sigmoid functions, are investigated. The mixed state of the transfer curve enables the utilization of both exploitation and exploration, improving computational performance in reinforcement learning tasks ...
Jisoo Park, Juhyung Seo, Ryun‐Han Koo, Dinithi Jayasuriya, Nethmi Jayasinghe, Wonjun Shin, Amit R. Trivedi, Hocheon Yoo   +7 more
wiley   +1 more source

Label‐Free and Low‐Power Driven Cancer Biomarker Detection Enabled by 2D Hexagonal Titanium Oxide

Advanced Functional Materials, EarlyView.
A low‐power driven FET biosensor based on 2D hexagonal TiO2 detects the cancer biomarker carcinoembryonic antigen with high sensitivity, a low detection limit of 0.22 pg mL−1, and excellent selectivity. Leveraging the unique electronic properties of the material, this work demonstrates strong potential for integration into miniature and portable cancer
Yange Luan, Qijie Ma, Yihong Hu, Xinyi Hu, Guanyu Chen, Jiaru Zhang, Zhong Li, Dongdong Xie, Guanghui Ren, Yunyi Yang, Guifu Ding, Kate Fox, Bao Yue Zhang, Jian Zhen Ou   +13 more
wiley   +1 more source

Investigation of Temperature and Channel Dimension Effects on CMOS Circuit Performance

East European Journal of Physics
This paper presents the impact of temperature variations and alterations in transistor channel dimensions on CMOS (Complementary Metal-Oxide-Semiconductor) circuit technology.
Zitouni Messai, Abdelhalim Brahimi, Okba Saidani, Nacerdine Bourouba, Abderrahim Yousfi   +4 more
doaj   +1 more source

CMOS sensor systems

Sensors and Actuators A: Physical, 1998
Sensor systems based on CMOS technology benefit not only from capability of silicon to realize both, sensing and electronic functions, but also from the manufacturing maturity that the CMOS technology has reached so far. In this contribution we discuss some of the important issues of the CMOS sensor system design, such as available technologies and ...
openaire   +4 more sources