Results 81 to 90 of about 389,945 (331)

Two-phase RTD-CMOS pipelined circuits [PDF]

open access: yes, 2012
MOnostable-BIstable Logic Element (MOBILE) networks can be operated in a gate-level pipelined fashion (nanopipeline) allowing high through output. Resonant tunneling diode (RTD)-based MOBILE nanopipelined circuits have been reported using different clock
Avedillo de Juan, María José   +2 more
core   +2 more sources

Reconfigurable Three‐Dimensional Superconducting Nanoarchitectures

open access: yesAdvanced Functional Materials, EarlyView.
3D superconducting nanostructures offer new possibilities for emergent physical phenomena. However, fabricating complex geometries remains challenging. Here 3D nanoprinting of complex 3D superconducting nanoarchitectures is established. As well as propagating superconducting vortices in 3D, anisotropic superconducting properties with geometric ...
Elina Zhakina   +11 more
wiley   +1 more source

Quantum Dots and Perovskites‐Based Physically Unclonable Functions for Binary and Ternary Keys via Optical‐to‐Electrical Conversion

open access: yesAdvanced Functional Materials, EarlyView.
This study investigates optoelectronic PUFs that improve on traditional optical and electrical PUFs. The absorber materials are randomly coated through spray coating, ligand exchange, and dynamic spin coating. Incident light generates wavelength‐dependent binary multikey and enhances security ternary keys, approaching near‐ideal inter‐ and intra ...
Hanseok Seo   +6 more
wiley   +1 more source

Surface Wrinkling of Plasma‐Exposed PDMS is Caused by Water Vapor Sorption: An Optical Environmental Sensor

open access: yesAdvanced Functional Materials, EarlyView.
Wrinkling of soft materials, such as polydimethylsiloxane (PDMS), underpins a myriad of technologies. Plasma‐oxidation of PDMS induces spontaneous wrinkling, which is canonically attributed to thermal expansion‐contraction of bilayers. Employing experiments and modelling, it is demonstrated that sorption of water vapor is instead responsible for ...
Zain Ahmad   +8 more
wiley   +1 more source

Fully CMOS Memristor Based Chaotic Circuit [PDF]

open access: yes, 2014
This paper demonstrates the design of a fully CMOS chaotic circuit consisting of only DDCC based memristor and inductance simulator. Our design is composed of these active blocks using CMOS 0.18 µm process technology with symmetric ±1.25 V supply ...
Kuntman, H. H., Yener, S. C.
core   +1 more source

CMOS design of adaptive fuzzy ASICs using mixed-signal circuits [PDF]

open access: yes, 1996
Analog circuits are natural candidates to design fuzzy chips with optimum speed/power figures for precision up to about 1%. This paper presents a methodology and circuit blocks to realize fuzzy controllers in the form of analog CMOS chips.
Navas González, Rafael   +2 more
core   +1 more source

Bright Monocompound Metal Halide Scintillator for Fast Neutron Radiography

open access: yesAdvanced Functional Materials, EarlyView.
Metal halide scintillator, tetraphenylphosphonium manganese bromide (TPP2MnBr4), provides a significant benefit for fast neutron imaging. A fourfold increase in efficiency over traditional zinc sulfide screens is achieved by efficiently utilizing neutron interactions within its homogeneous structure.
Aditya Bhardwaj   +13 more
wiley   +1 more source

Electronically tunable compact inductance simulator with experimental verification

open access: yesETRI Journal
A novel inductance simulation circuit employing only two dual-output voltage-differencing buffered amplifiers (DO-VDBAs) and a single capacitance (grounded) is proposed in this paper.
Kapil Bhardwaj   +4 more
doaj   +1 more source

Low Power-High Gain Bulk-Driven 3 Stages CMOS Miller OTA in 130nm Technology

open access: yesSakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020
The requirement of low-power analog circuits has been raised in recent years due to the strict limitation of power consumption in modern applications.
Engin Afacan
doaj   +1 more source

Polaronic and Electrochemical Signatures in Group IVB (Ti, Zr, Hf) Oxides: Unified SKP–DFT Insights for Tunable Transport in Energy and Electronic Devices

open access: yesAdvanced Functional Materials, EarlyView.
Charge carrier concentration and mobility in TiO2, ZrO2, and HfO2 powder films are experimentally mapped as a function of temperature. The results uncover polaron‐mediated transport regimes and field‐activated conduction, enabling the design of oxide‐based electronic and energy devices with thermally tunable functionality.
Beatriz Moura Gomes   +3 more
wiley   +1 more source

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