Results 81 to 90 of about 407,225 (353)

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

open access: yesApplied Sciences, 2019
Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth.
Hany Mahrous   +4 more
doaj   +1 more source

Segmented optical transmitter comprising a CMOS driver array and an InP IQ-MZM for advanced modulation formats [PDF]

open access: yes, 2017
Segmented Mach-Zehnder modulators are promising solutions to generate complex modulation schemes in the migration towards optical links with a higher-spectral efficiency.
Aimone, Alessandro   +12 more
core   +1 more source

Exploiting Two‐Photon Lithography, Deposition, and Processing to Realize Complex 3D Magnetic Nanostructures

open access: yesAdvanced Functional Materials, EarlyView.
Two‐photon lithography (TPL) enables 3D magnetic nanostructures with unmatched freedom in geometry and material choice. Advances in voxel control, deposition, and functionalization open pathways to artificial spin ices, racetracks, microrobots, and a number of additional technological applications.
Joseph Askey   +5 more
wiley   +1 more source

Ultrahigh‐Yield, Multifunctional, and High‐Performance Organic Memory for Seamless In‐Sensor Computing Operation

open access: yesAdvanced Functional Materials, EarlyView.
Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim   +14 more
wiley   +1 more source

Low Power-High Gain Bulk-Driven 3 Stages CMOS Miller OTA in 130nm Technology

open access: yesSakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020
The requirement of low-power analog circuits has been raised in recent years due to the strict limitation of power consumption in modern applications.
Engin Afacan
doaj   +1 more source

Experimental characterization of CMOS photonic devices [PDF]

open access: yes, 2016
Current electrical interconnects in super-computers and high-performance processors present a bottleneck in terms of bandwidth and power consumption. A migration to the optical domain in order to cope with the connectivity between units (e.g.
Gómez Gonzalvo, Alberto
core   +1 more source

Feasibility of an Electro-Optic Link for Bondpad-less CMOS Lab-on-Chips

open access: yes, 2011
This paper explores the feasibility of developing CMOS-based lab-on-chips to analyse the properties of a fluid, without the need for bond wires. Both inductive and electro-optical schemes are suggested as possible solutions.
Constandinou, TG, Nikolic, K, Serb, A
core   +1 more source

Overview of CMOS process and design options for image sensor dedicated to space applications [PDF]

open access: yes, 2005
With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain.
Corbière, Franck   +2 more
core   +1 more source

Nanomaterial‐Integrated Fiber Neural Probes for Deep Brain Monitoring and Modulation: Challenges and Opportunities

open access: yesAdvanced Functional Materials, EarlyView.
The article presents nanomaterial‐integrated fiber neural probes as innovative tools for deep brain molecular sensing, neural stimulation, and temperature monitoring. It examines breakthroughs in SERS‐based biomolecule detection, thermoplasmonic activation, and luminescent thermometry, alongside strategies to overcome stability, specificity, and ...
Di Zheng   +5 more
wiley   +1 more source

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

open access: yesAdvanced Functional Materials, EarlyView.
In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang   +19 more
wiley   +1 more source

Home - About - Disclaimer - Privacy