Results 101 to 110 of about 58,331 (251)

Electro‐Chemo‐Mechanical Coupling in Hf0.5Zr0.5O2 Ferroionic Heterostructures

Advanced Functional Materials, EarlyView.
Schematic of a ferroionic HZO heterostructure where epitaxial interfaces enable dynamic oxygen‐vacancy exchange, coupling ionic and ferroelectric degrees of freedom. Vacancy‐mediated polarization modulation biases HZO polymorphism, suppresses leakage, and enhances piezoelectric response, yielding distinct butterfly‐loop evolution and diode‐like ...
Achilles Bergne, Denis Alikin, Milica Vasiljevic, Victor B. Tinti, Javier Zamudio‐García, Leonardo Soares de Oliveira, Megan Landberg, Dimitrios Koukoulis, Huaiyu Chen, Jesper Wallentin, David Marrero‐López, Astri Bjørnetun Haugen, Sizhao Huang, Dennis Christensen, Nini Pryds, Alexander Tselev, Andrei Kholkin, Vincenzo Esposito   +17 more
wiley   +1 more source

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors

Sensors, 2019
We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of ...
Kazunari Kurita, Takeshi Kadono, Satoshi Shigematsu, Ryo Hirose, Ryosuke Okuyama, Ayumi Onaka-Masada, Hidehiko Okuda, Yoshihiro Koga   +7 more
doaj   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

Dispensing Volumetric Additive Manufacturing

Advanced Functional Materials, EarlyView.
Dispensing volumetric additive manufacturing (DVAM) prints 3D structures inside a photocurable resin droplet suspended from the tip of a glass pipette, enabling sequential printing without resin vats or manual part removal. Real‐time droplet profiling and ray‐tracing‐based correction compensate for optical distortion at the curved resin‐air interface ...
Hongryung Jeon, Yunsoo Lee, Seobin Park, Kyung‐Hwan Kim, Junyoung Seo, Im Doo Jung   +5 more
wiley   +1 more source

Pixel Detectors

, 2005
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid pixel ...
Wermes, Norbert
core   +1 more source

Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]

, 2011
Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
Cervantes, Paola, Corbière, Franck, Estribeau, Magali, Goiffon, Vincent, Magnan, Pierre, Virmontois, Cédric   +5 more
core   +1 more source

Metachromatic Butterfly Bile Pigments for Multi‐Level Optical Security Films

Advanced Functional Materials, EarlyView.
Bio‐derived optical security materials are manufactured by embedding butterfly‐based pigments in polymer films. Tunable color and fluorescence responses arise from concentration‐controlled metachromasy, enabling spatially encoded patterns with distinct visible, UV‐active, and spectral signatures.
Limin Wang, Bodo D. Wilts
wiley   +1 more source

PSF and non-uniformity in a monolithic, fully depleted, 4T CMOS image sensor [PDF]

, 2018
Lateral charge diffusion is one of the main contributors to the Point Spread Function (PSF) in CMOS image sensors, due to the small depth to which they can be depleted.
Hall, Jorden, MacKay, Soman, Stefanov
core   +1 more source

Optoelectronic Control of Redox Dynamics in POM Memristors for Noise‐Resilient Speech and Hardware‐Level Motion Recognition

Advanced Functional Materials, EarlyView.
Optoelectronic control of redox‐active polyoxometalate clusters in polymer matrices yields hybrid memristors with switchable volatile and non‐volatile modes, enabling reservoir‐type in‐sensor optical preprocessing and stable multilevel synapses for multimodal neuromorphic computing, including noise‐tolerant audiovisual keyword recognition and hardware ...
Xiangyu Ma, Ziyu Lv, Guohua Zhang, Zhongyue Xu, Yongbiao Zhai, Haiming Huang, Qiyan Zhang, Xiaojin Zhao, Yan Wang, Ye Zhou, Ziyu Xiong, Guanglong Ding, Wentao Xu, Su‐Ting Han   +13 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source