Results 201 to 210 of about 58,331 (251)
The Journal of the Institute of Image Information and Television Engineers, 1999 Shoji Kawahito, Kiyoharu Aizawa
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Compensation for Process and Temperature Dependency in a CMOS Image Sensor. [PDF]
Sensors (Basel), 2019 Xie S, Theuwissen A.
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Motion-resistant three-wavelength spatial frequency domain imaging system with ambient light suppression using an 8-tap CMOS image sensor. [PDF]
J Biomed OptFeng Y +7 more
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Low-Cost 2D Index and Straightness Measurement System Based on a CMOS Image Sensor. [PDF]
Sensors (Basel), 2019 Küng A, Bircher BA, Meli F.
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IEEE Circuits and Devices Magazine, 2005
In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance,
A. El Gamal, H. Eltoukhy
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In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance,
A. El Gamal, H. Eltoukhy
exaly +4 more sources
CMOS active pixel image sensor
IEEE Transactions on Electron Devices, 1994A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 /spl mu/m double-poly, double-metal foundry CMOS process and is realized as a 128/spl times/128 array of 40 /spl mu/m/spl times/40 /spl mu/m pixels. The sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor
S. Mendis, S.E. Kemeny, E.R. Fossum
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Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2005
Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
I. Brouk, Y. Nemirovsky
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Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
I. Brouk, Y. Nemirovsky
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CMOS image sensors for sensor networks
Analog Integrated Circuits and Signal Processing, 2006We report on two generations of CMOS image sensors with digital output fabricated in a 0.6 ?m CMOS process. The imagers embed an ALOHA MAC interface for unfettered self-timed pixel read-out targeted to energy-aware sensor network applications. Collision on the output is monitored using contention detector circuits.
Eugenio Culurciello, Andreas G. Andreou
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