Results 61 to 70 of about 58,142 (300)
Synchrotron Radiation for Quantum Technology
Advanced Functional Materials, EarlyView.Materials and interfaces underpin quantum technologies, with synchrotron and FEL methods key to understanding and optimizing them. Advances span superconducting and semiconducting qubits, 2D materials, and topological systems, where strain, defects, and interfaces govern performance.
Oliver Rader +10 more
wiley +1 more source
, 2017 A CCD image sensor of the type for providing charge multiplication by impact ionisation has an image area and a plurality of pixels. A separate multiplication register has a plurality of multiplication elements arranged to receive charge from the pixels ...
Jerram, Paul, Stefanov, Konstantin
core
Cluster Imaging with a Direct Detection CMOS Pixel Sensor in Transmission Electron Microscopy
, 2009 A cluster imaging technique for Transmission Electron Microscopy with a direct detection CMOS pixel sensor is presented. Charge centre-of-gravity reconstruction for individual electron clusters improves the spatial resolution and thus the point spread ...
Battaglia, Marco +3 more
core +1 more source
RTS noise impact in CMOS image sensors readout circuit [PDF]
, 2010 CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core +1 more source
Advanced Functional Materials, EarlyView.Electric control of magnetic tunnel junctions offers a path to drastically reduce the energy requirements of the device. Electric field control of magnetization can be realized in a multitude of ways. These mechanisms can be integrated into existing spintronic devices to further reduce the operational energy.
Will Echtenkamp +7 more
wiley +1 more source
A versatile sensor interface for programmable vision systems-on-chip [PDF]
, 2003 This paper describes an optical sensor interface designed for a programmable mixed-signal vision chip. This chip has been designed and manufactured in a standard 0.35μm n-well CMOS technology with one poly layer and five metal layers.
Domínguez Castro, Rafael +4 more
core +1 more source
CMOS Image Sensors for High Speed Applications [PDF]
Sensors, 2009 Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications. The parallel outputs that CMOS imagers can offer, in addition to complete camera-on-a-chip solutions due to being fabricated in standard CMOS technologies,
Munir El-Desouki +5 more
openaire +3 more sources
Reconfigurable Three‐Dimensional Superconducting Nanoarchitectures
Advanced Functional Materials, EarlyView.3D superconducting nanostructures offer new possibilities for emergent physical phenomena. However, fabricating complex geometries remains challenging. Here 3D nanoprinting of complex 3D superconducting nanoarchitectures is established. As well as propagating superconducting vortices in 3D, anisotropic superconducting properties with geometric ...
Elina Zhakina +11 more
wiley +1 more source
, 2015 A CMOS image sensor 101 comprises an active layer 11 of a first conductivity type arranged to be reversed biased and a pixel 20 comprising a photosensitive element comprising a well 22 of a second conductivity type and a well 21 of the first conductivity
Stefanov, Konstantin
core
Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]
, 2010 This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Cervantes, Paola +6 more
core +1 more source