Results 101 to 110 of about 3,832 (187)

CMOS Vision Sensors: Embedding Computer Vision at Imaging Front-Ends [PDF]

, 2018
CMOS Image Sensors (CIS) are key for imaging technol-ogies. These chips are conceived for capturing opticalscenes focused on their surface, and for delivering elec-trical images, commonly in digital format.
Carmona Galán, Ricardo, Fernández Berni, Jorge, Leñero Bardallo, Juan Antonio, Rodríguez Vázquez, Ángel Benito, Vornicu, Ion   +4 more
core   +1 more source

Identification of PKN2 and MOB4 as Coordinators of Collective Cell Migration

Advanced Science, Volume 13, Issue 8, 9 February 2026.
Through a genetic screen, PKN2 and MOB4 are identified as two proteins regulating the healing of an epithelial model wound. PKN2 promotes collective cell migration by maintaining the cohesion of cell monolayers from their lateral junctions, whereas MOB4 restrains collective cell migration and provides a lamellipodial cue for front‐rear polarity in ...
Artem I. Fokin, Yueying Lin, Dmitry Y. Guschin, Hsiang‐Ying Chen, John James, Jie Yan, Pascal Silberzan, Alexis M. Gautreau   +7 more
wiley   +1 more source

Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes [PDF]

, 2011
A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications.
Carrere, Jean-Pierre, Goiffon, Vincent, Magnan, Pierre, Place, Sébastien, Roy, François   +4 more
core   +1 more source

Real‐Time Deep‐Learning Image Reconstruction and Instrument Tracking in MR‐Guided Biopsies

Journal of Magnetic Resonance Imaging, Volume 63, Issue 2, Page 475-483, February 2026.
ABSTRACT Background Transrectal in‐bore MR‐guided biopsy (MRGB) is accurate but time‐consuming, limiting clinical throughput. Faster imaging could improve workflow and enable real‐time instrument tracking. Existing acceleration methods often use simulated data and lack validation in clinical settings.
Constant R. Noordman, Lauren P. W. te Molder, Marnix C. Maas, Christiaan G. Overduin, Jurgen J. Fütterer, Henkjan J. Huisman   +5 more
wiley   +1 more source

New source of random telegraph signal in CMOS image sensors [PDF]

, 2012
We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Gaillardin, Marc, Goiffon, Vincent, Magnan, Pierre, Martin-Gonthier, Philippe, Virmontois, Cédric   +4 more
core  

Single Event Effects in CMOS Image Sensors [PDF]

, 2012
In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI ...
Goiffon, Vincent, Lalucaa, Valerian, Magnan, Pierre, Petit, Sophie, Rolland, Guy   +4 more
core   +2 more sources

A Review of Recent Advances in High-Dynamic-Range CMOS Image Sensors

Chips
High-dynamic-range (HDR) technology enhances the capture of luminance beyond the limits of traditional images, facilitating the capture of more nuanced and lifelike visual effects.
Jingyang Chen, Nanbo Chen, Zhe Wang, Runjiang Dou, Jian Liu, Nanjian Wu, Liyuan Liu, Peng Feng, Gang Wang   +8 more
doaj   +1 more source

Compensation for Process and Temperature Dependency in a CMOS Image Sensor

Sensors, 2019
This paper analyzes and compensates for process and temperature dependency among a (Complementary Metal Oxide Semiconductor) CMOS image sensor (CIS) array. Both the analysis and compensation are supported with experimental results on the CIS’s dark
Shuang Xie, Albert Theuwissen
doaj   +1 more source

Modeling the Performance of Single-Bit and Multi-Bit Quanta Image Sensors

IEEE Journal of the Electron Devices Society, 2013
Imaging performance metrics of single-bit and multi-bit photo-electron-counting quanta image sensors (QIS) are analyzed using Poisson arrival statistics. Signal and noise as a function of exposure are determined.
Eric R. Fossum
doaj   +1 more source

Comparison of Pinning Voltage Estimation Methods in Pinned Photodiode CMOS Image Sensors

IEEE Journal of the Electron Devices Society, 2016
The pinning voltage is a key design parameter of pinned photodiode CMOS image sensors which significantly affects the device performances and which is often used by manufacturers to monitor production lines and for the optimization of technological ...
Alice Pelamatti, Vincent Goiffon, Alexis de Ipanema Moreira, Pierre Magnan, Cedric Virmontois, Olivier Saint-Pe, Michel Breart de Boisanger   +6 more
doaj   +1 more source