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A CMOS image sensor (CIS) with low power motion detection for security camera applications

2003 IEEE International Conference on Consumer Electronics, 2003. ICCE., 2003
This paper presents a low power motion detection algorithm and system architecture. The proposed architecture uses just one bit data of each selected pixel for motion detection, where less than a few percentages of the total pixels will be used. Since only a small amount of image data is used for the motion detection, extremely low power consumption is
null Sung-Min Sohn   +2 more
openaire   +1 more source

First tests of CHERWELL, a Monolithic Active Pixel Sensor: A CMOS Image Sensor (CIS) using 180 nm technology

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2013
Abstract The Cherwell is a 4T CMOS sensor in 180 nm technology developed for the detection of charged particles. Here, the different test structures on the sensor will be described and first results from tests on the reference pixel variant are shown. The sensors were shown to have a noise of 12 e − and a signal to noise up to 150 in 55 Fe.
James Mylroie-Smith   +10 more
openaire   +1 more source

Reliability characterization of advanced CMOS image sensor (CIS) with 3D stack and in-pixel DTI

2018 IEEE International Reliability Physics Symposium (IRPS), 2018
Due to the advancement of CMOS image sensors (CIS), camera module on the mobile platform has paved way for very high quality photos and video shooting capability. In order to improve picture quality, the CIS technology has been also scaling aggressively to provide more Mega-Pixels (MP) but it also must be less susceptible and immune to noise sources ...
Younggeun Ji   +19 more
openaire   +1 more source

A warpage of wafer level bonding for CIS (CMOS Image Sensor) device using polymer adhesive

2009 International Conference on Electronic Packaging Technology & High Density Packaging, 2009
The polymer adhesive bonding technology using wafer-level technology was investigated to adhere silicon to glass wafer and it analyzed warpage caused in cemented wafer and the degree of intensity. We executed the wafer adhesion depending on temperature (130°C, 190°C), the pressure (5000N, 8000N), the height of the adhesive layer (10μm, 20μm) and the ...
Jae-Hyun Park   +4 more
openaire   +1 more source

A CMOS image sensor (CIS) architecture with low power motion detection for portable security camera applications

IEEE Transactions on Consumer Electronics, 2003
This paper presents a low power motion detection algorithm and its system architecture. The proposed architecture uses just one bit data of each selected pixel for the motion detection, where less than a few percentages of the total pixels will be selected.
null Sung-Min Sohn   +4 more
openaire   +1 more source

Random Telegraph Signal Noise in CMOS Image Sensor (CIS) and Use of a CIS in a Low-Cost Digital Microscope

2011
The introduction of the digital image sensor has triggered a revolution in the field of imaging. It has not only just replaced the conventional silver halide film based imaging system, but has also enormously widened the scope of imaging applications. Previously, charge-coupled devices (CCDs) were the most popular technology for image sensors.
openaire   +1 more source

A 0.27e-rms Read Noise 220-μV/e-Conversion Gain Reset-Gate-Less CMOS Image Sensor With 0.11-μm CIS Process

IEEE Electron Device Letters, 2015
null Min-Woong Seo   +3 more
openaire   +1 more source

Innovations in research and clinical care using patient‐generated health data

Ca-A Cancer Journal for Clinicians, 2020
H S L Jim   +2 more
exaly  

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