Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors [PDF]
, 2012 Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared.
Bardoux, Alain +7 more
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Super-Resolution Lensless Imaging of Cells Using Brownian Motion
Applied Sciences, 2019 The lensless imaging technique, which integrates a microscope into a complementary metal oxide semiconductor (CMOS) digital image sensor, has become increasingly important for the miniaturization of biological microscope and cell detection equipment ...
Yuan Fang, Ningmei Yu, Yuquan Jiang
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CMOS Vision Sensors: Embedding Computer Vision at Imaging Front-Ends [PDF]
, 2018 CMOS Image Sensors (CIS) are key for imaging technol-ogies. These chips are conceived for capturing opticalscenes focused on their surface, and for delivering elec-trical images, commonly in digital format.
Carmona Galán, Ricardo +4 more
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Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]
, 2012 This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, Alain +5 more
core +3 more sources
Design of a CMOS Image Sensor with Bi-Directional Gamma-Corrected Digital-Correlated Double Sampling
Sensors, 2023 We present a 640 × 480 CMOS image sensor (CIS) with in-circuit bi-directional gamma correction with a proposed digital-correlated double sampling (CDS) structure.
Jaehee Cho +5 more
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RTS noise reduction of CMOS image sensors using amplifier-selection pixels [PDF]
, 2013 This paper describes a RTS (random telegraph signal) noise reduction technique for an active pixel CMOS image sensor (CIS) with in-pixel selectable dual source-follower amplifiers.
Kagawa, Kiichiro +4 more
core +1 more source
Sensors, 2017 Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current.
Kuo-Tsai Wu +2 more
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Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali +2 more
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Ionizing radiation effects on CMOS imagers manufactured in deep submicron process [PDF]
, 2008 We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging.
+8 more
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A 75-ps Gated CMOS Image Sensor with Low Parasitic Light Sensitivity
Sensors, 2016 In this study, a 40 × 48 pixel global shutter complementary metal-oxide-semiconductor (CMOS) image sensor with an adjustable shutter time as low as 75 ps was implemented using a 0.5-μm mixed-signal CMOS process.
Fan Zhang, Hanben Niu
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