Results 51 to 60 of about 3,872 (182)
Pixel design and evaluation in CMOS image sensor technology [PDF]
A chip designed in a 0.18 μm CMOS Image Sensor Technology (CIS) is presented which incorporates different pixel design alternatives for Active Pixel Sensor (APS).
Liñán Cembrano, Gustavo +2 more
core
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Implantable optoelectrical devices are an effective resource for the modulation and monitoring of neural activity with high spatiotemporal resolution. This review discusses current challenges faced by these devices and outlines future perspectives for the development of next‐generation neural interfaces targeting chronic, multisite, and multimodal ...
Stella Aslanoglou +4 more
wiley +1 more source
A complementary metal oxide semiconductor (CMOS) image sensor (CIS), using offset pixel aperture (OPA) technique, was designed and fabricated using the 0.11-µm CIS process. In conventional cameras, an aperture is located on the camera lens. However,
Byoung-Soo Choi +6 more
doaj +1 more source
Design and Performance of a Pinned Photodiode CMOS Image Sensor Using Reverse Substrate Bias [PDF]
A new pinned photodiode (PPD) CMOS image sensor with reverse biased p-type substrate has been developed and characterized. The sensor uses traditional PPDs with one additional deep implantation step to suppress the parasitic reverse currents, and can be ...
Andrew Clarke +5 more
core +2 more sources
A high‐capacity polyimide‐linked porous organic polymer (HAT‐PTO) incorporating numerous redox‐active centers is synthesized via a hydrothermal reaction, delivering a high theoretical capacity of 484 mAh g−1. In situ hybridization with carboxyl‐functionalized multiwalled carbon nanotubes enhances conductivity and stability, achieving 397 mAh g−1 at C ...
Arindam Mal +7 more
wiley +1 more source
Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Cervantes, Paola +7 more
core +1 more source
A Colloidal Quantum Dot Thermistor and Bolometer
This work introduces colloidal quantum dot thermistors employing a potential barrier structure to tune the activation energy of transport and hence the temperature coefficient of resistance (TCR). Upon integration with plasmonic absorbers, the CQD‐based bolometer device enables room‐temperature wavelength‐selective photodetection across the mid‐ to ...
Gaurav Kumar +7 more
wiley +1 more source
Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations [PDF]
TCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists on a linear array of five pinned
Carmona Galán, Ricardo +2 more
core +1 more source
Bioelectrical Interfaces Beyond Excitable Cells: Cancer, Aging, and Gene Expression Modulation
ABSTRACT The investigation of biological conductivity has evolved from its classical foundation based on ionic fluxes underpinning cardiac and neuronal excitability to a multifaceted regulator of cellular physiology. Traditional approaches for probing electrical events in living matter focused largely on action potentials recording.
Paolo Cadinu +14 more
wiley +1 more source

