Results 61 to 70 of about 3,872 (182)
4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays
Applied Physics ExpressFor radiation-hardened CMOS image sensors (CIS), 4H-SiC 64 pixel array CIS were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated.
Tatsuya Meguro +5 more
doaj +1 more source
Smart CMOS image sensor for lightning detection and imaging [PDF]
, 2013 We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor.
Bréart-de-Boisanger, Michel +12 more
core +1 more source
Quantifying Strain and Its Effect on Charge Transport in Ge/Si Core/Shell Nanowires
Advanced Science, EarlyView.This work demonstrates strain engineering in Ge/Si core–shell nanowires (CS NWs) by tuning the Ge core‐Si shell dimensions. Polarization‐resolved µ‐Raman and geometrical phase analysis quantify the resulting strain. Electronic transport measurements demonstrate record hole mobilities up to 25 400 cm2/Vs, highlighting these Ge/Si CS NWs as a promising ...
Aswathi K. Sivan +14 more
wiley +1 more source
Framing imaging technology for transient information detecting based on CIS
Shenzhen Daxue xuebao. Ligong banMicrochannel plate (MCP) traveling-wave gated framing cameras are widely used for inertial confinement fusion. However, they suffer from drawbacks such as bulky size and non-single-line-of-sight imaging.
MA Youlin +6 more
doaj +1 more source
Instruments, 2023 This article experimentally investigates the inception of an innovative hard X-ray photon energy attenuation layer (PAL) to advance high-energy X-ray detection (20–50 keV).
Eldred Lee +5 more
doaj +1 more source
Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology [PDF]
, 2010 Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the
Girard, Sylvain +7 more
core +4 more sources
Advanced Science, EarlyView.ABSTRACT Engineered ascorbate peroxidase APEX2 has been widely used for spatially restricted profiling of subcellular biomolecules, but its catalytic efficiency toward newly developed probes such as biotin‐aniline (Btn‐An) remains suboptimal. To overcome this limitation, we performed yeast surface display‐based directed evolution to enhance APEX2 ...
Gang Wang, Yi Li, Peiyuan Meng, Peng Zou
wiley +1 more source
Dynamic range optimisation of CMOS image sensors dedicated to space applications [PDF]
, 2007 Nowadays, CMOS image sensors are widely considered for space applications. Their performances have been significantly enhanced with the use of CIS (CMOS Image Sensor) processes in term of dark current, quantum efficiency and conversion gain.
Boucher, Luc +5 more
core +1 more source
Influence of Bottom Electrodes on the Ferroelectric Stability of AlScN Film at High Temperatures
Advanced Electronic Materials, EarlyView.The thermal stability of AlScN depends on the bottom electrode. When the bottom electrode possesses compressive stress, tensile strain develops in the AlScN upon thermal annealing, reducing the switching barrier. When the bottom electrode forms a coherent interface with AlScN, significant tensile strain and defects are generated in the AlScN layer ...
Kyung Do Kim +4 more
wiley +1 more source
Evidence of a novel source of random telegraph signal in CMOS image sensors [PDF]
, 2011 This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Gaillardin, Marc +4 more
core +1 more source