Results 31 to 40 of about 292,668 (334)
Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]
, 2010 Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
Havard, E. +2 more
core +1 more source
Review of CMOS image sensors [PDF]
Microelectronics Journal, 2006 Abstract The role of CMOS Image Sensors since their birth around the 1960s, has been changing a lot. Unlike the past, current CMOS Image Sensors are becoming competitive with regard to Charged Couple Device (CCD) technology. They offer many advantages with respect to CCD, such as lower power consumption, lower voltage operation, on-chip functionality
M. Bigas +3 more
openaire +1 more source
Research-grade CMOS image sensors for remote sensing applications [PDF]
, 2004 Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle.
Belliot, Pierre +8 more
core +1 more source
AIP Advances, 2014 The experiments of displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor are presented. The CMOS APS image sensors are manufactured in the standard 0.35 μm CMOS technology.
Zujun Wang +6 more
doaj +1 more source
Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]
, 2012 1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Allegret, Stephane +5 more
core +1 more source
Performance and Reliability Degradation of CMOS Image Sensors in Back-Side Illuminated Configuration
IEEE Journal of the Electron Devices Society, 2020 We present a systematic characterization of wafer-level reliability dedicated test structures in Back-Side-Illuminated CMOS Image Sensors. Noise and electrical measurements performed at different steps of the fabrication process flow, definitely ...
Andrea Vici +5 more
doaj +1 more source
Sensors, 2023 This paper presents an electron multiplication charge coupled device (EMCCD) based on capacitive deep trench isolation (CDTI) and developed using complementary metal oxide semiconductor (CMOS) technology.
Olivier Marcelot +7 more
doaj +1 more source
Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology [PDF]
, 2010 Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the
Girard, Sylvain +7 more
core +4 more sources
Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors
IEEE Transactions on Electron Devices, 2019 In this paper, we propose a physics-based compact model of the pinned photodiode (PPD) combined with the transfer gate. A set of analytical expressions is derived for the 2-D electrostatic profile, the PPD capacitance, and the charge transfer current ...
Raffaele Capoccia +3 more
semanticscholar +1 more source
Super Field-of-View Lensless Camera by Coded Image Sensors
Sensors, 2019 A lensless camera is an ultra-thin computational-imaging system. Existing lensless cameras are based on the axial arrangement of an image sensor and a coding mask, and therefore, the back side of the image sensor cannot be captured.
Tomoya Nakamura +3 more
doaj +1 more source