Results 41 to 50 of about 9,550 (244)

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Development of a Smartphone-Based Fluorescent Immunochromatographic Assay Strip Reader

open access: yesSensors, 2020
Fluorescence immunochromatographic assay (FICA) is a rapid immunoassay technique that has the characteristics of high precision and sensitivity. Although image FICA strip readers have the advantages of high portability and easy operation, the use of high-
Qi Zheng   +4 more
doaj   +1 more source

Chemical State Detection and Charge Transfer in Complex Oxide Heterostructures via In Situ Auger Electron Spectroscopy

open access: yesAdvanced Functional Materials, EarlyView.
In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian   +1 more
wiley   +1 more source

Novel Production Concept of CH2F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3-D-Stacked CMOS Image Sensors

open access: yesIEEE Journal of the Electron Devices Society
We have developed a novel molecular-ion implantation technique and a molecular-ion-implanted silicon epitaxial wafer for highly sensitive CMOS image sensors.
Ryo Hirose   +4 more
doaj   +1 more source

Machine Learning Based Single-Frame Super-Resolution Processing for Lensless Blood Cell Counting

open access: yesSensors, 2016
A lensless blood cell counting system integrating microfluidic channel and a complementary metal oxide semiconductor (CMOS) image sensor is a promising technique to miniaturize the conventional optical lens based imaging system for point-of-care testing (
Xiwei Huang   +8 more
doaj   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu   +7 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand   +13 more
wiley   +1 more source

A new blind image conversion complexity metric for intelligent CMOS image sensors

open access: yesIET Image Processing, 2021
Many algorithms have been developed for complementary metal–oxide–semiconductor (CMOS) image sensors to speed up analogue‐to‐digital (A‐to‐D) conversion of captured images.
Mohamed R. Elmezayen, Suat U. Ay
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

open access: yesAdvanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg   +6 more
wiley   +1 more source

Home - About - Disclaimer - Privacy