Results 21 to 30 of about 12,131,408 (286)

CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity

Sensors, 2020
This paper presents a CMOS depth image sensor with offset pixel aperture (OPA) using a back-side illumination structure to improve disparity. The OPA method is an efficient way to obtain depth information with a single image sensor without additional ...
Jimin Lee, Sang-Hwan Kim, Hyeunwoo Kwen, Juneyoung Jang, Seunghyuk Chang, JongHo Park, Sang-Jin Lee, Jang-Kyoo Shin   +7 more
doaj   +1 more source

Research-grade CMOS image sensors for remote sensing applications [PDF]

, 2004
Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle.
Belliot, Pierre, Larnaudie, Franck, Corbière, Franck, Saint-Pé, Olivier, Estribeau, Magali, Tulet, Michel, Davancens, Robert, Magnan, Pierre, Martin-Gonthier, Philippe   +8 more
core   +1 more source

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review

IEEE Journal of the Electron Devices Society, 2022
We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics
Kazunari Kurita, Takeshi Kadono, Ryosuke Okuyama, Ayumi Onaka-Masada, Satoshi Shigematsu, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Hidehiko Okuda, Yoshihiro Koga   +9 more
doaj   +1 more source

Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses [PDF]

Journal of Electromagnetic Engineering and Science
With the electromagnetic environment becoming increasingly complex, it is crucial to address the risk posed by electromagnetic pulse, which critically impairs the performance and reliability of electronic systems based on complementary metal oxide ...
Zhikang Yang, Lin Wen, Yudong Li, Dong Zhou, Xin Wang, Rui Ding, Meiqing Zhong, Cui Meng, Wenxiao Fang, Qi Guo   +9 more
doaj   +1 more source

Development of CMOS active pixel sensors [PDF]

, 2008
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for ...
Greig, Thomas Alexander
core   +7 more sources

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
core   +1 more source

Analysis and Optimization of Noise Response for Low-Noise CMOS Image Sensors [PDF]

, 2012
CMOS image sensors are nowadays widely used in imaging applications and particularly in low light flux applications. This is really possible thanks to a reduction of noise obtained, among others, by the use of pinned photodiode associated with a ...
Molina, Romain, P. Magnan, P. Martin-Gonthier, Cervantes, Paola, R. Molina, P. Cervantes, Magnan, Pierre, Martin-Gonthier, Philippe   +7 more
core   +1 more source

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]

, 2011
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux, Bardoux, A., V. Goiffon, Goiffon, Vincent, Bardoux, Alain, O. Saint-Pe, P. Magnan, Petit, S., Virmontois, Cédric, Saint-Pé, O., Girard, Sylvain, Magnan, P., Cedric Virmontois, Petit, Sophie, Rolland, Guy, S. Petit, Saint-Pé, Olivier, S. Girard, G. Rolland, Magnan, Pierre   +19 more
core   +1 more source

Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]

, 2010
Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
P. Magnan, P. Martin-Gonthier, E. Havard, Havard, E., Magnan, Pierre, Martin-Gonthier, Philippe   +5 more
core   +1 more source

Performance and Reliability Degradation of CMOS Image Sensors in Back-Side Illuminated Configuration

IEEE Journal of the Electron Devices Society, 2020
We present a systematic characterization of wafer-level reliability dedicated test structures in Back-Side-Illuminated CMOS Image Sensors. Noise and electrical measurements performed at different steps of the fabrication process flow, definitely ...
Andrea Vici, Felice Russo, Nicola Lovisi, Aldo Marchioni, Antonio Casella, Fernanda Irrera   +5 more
doaj   +1 more source