Results 31 to 40 of about 12,131,408 (286)

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2012
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent, Place, Sébastien, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Magnan, P., Gaillardin, M., Martin-Gonthier, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Magnan, Pierre, Martin-Gonthier, Philippe   +13 more
core   +1 more source

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Sensors, 2023
This paper presents an electron multiplication charge coupled device (EMCCD) based on capacitive deep trench isolation (CDTI) and developed using complementary metal oxide semiconductor (CMOS) technology.
Olivier Marcelot, Marjorie Morvan, Antoine Salih Alj, Stephane Demiguel, Cedric Virmontois, Anne Rouvie, Magali Estribeau, Vincent Goiffon   +7 more
doaj   +1 more source

Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors [PDF]

, 2013
This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters.
Pelamatti, Alice, Goiffon, Vincent, Estribeau, Magali, Cervantes, Paola, Magnan, Pierre   +4 more
core   +1 more source

A 12-Bit High-Speed Column-Parallel Two-Step Single-Slope Analog-to-Digital Converter (ADC) for CMOS Image Sensors

Sensors, 2014
A 12-bit high-speed column-parallel two-step single-slope (SS) analog-to-digital converter (ADC) for CMOS image sensors is proposed. The proposed ADC employs a single ramp voltage and multiple reference voltages, and the conversion is divided into coarse
Tao Lyu, Suying Yao, Kaiming Nie, Jiangtao Xu   +3 more
doaj   +1 more source

Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes [PDF]

, 2012
CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been ...
Place, Sébastien, Goiffon, Vincent, Roy, François, Carrere, Jean-Pierre, Magnan, Pierre, Allegret, Stephane   +5 more
core   +1 more source

RTS noise impact in CMOS image sensors readout circuit [PDF]

, 2009
CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
P. Magnan, P. Martin-Gonthier, Magnan, Pierre, Martin-Gonthier, Philippe   +3 more
core   +1 more source

Super Field-of-View Lensless Camera by Coded Image Sensors

Sensors, 2019
A lensless camera is an ultra-thin computational-imaging system. Existing lensless cameras are based on the axial arrangement of an image sensor and a coding mask, and therefore, the back side of the image sensor cannot be captured.
Tomoya Nakamura, Keiichiro Kagawa, Shiho Torashima, Masahiro Yamaguchi   +3 more
doaj   +1 more source

Imaging Observation System USing CMOS Image Sensor [PDF]

Journal of Astronomy and Space Sciences, 2001
A prototype CMOS (complementary metal oxide semiconductor) imaging system has been built and the possibility of applying to the application to astronomical observations has been investigated.
Ho Jin, Youngsik park, Jang-Hyun Park, In-Soo Yuk, Kwang-Il Seon, Wookwon Nam, Wonyong Han, Woo-Baik Lee, Sung-Woon Lee, Young-Hoon Shin   +9 more
doaj  

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2011
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
V. Goiffon, Goiffon, Vincent, C. Virmontois, M. Gaillardin, Gaillardin, Marc, P. Magnan, P. Martin-Gonthier, Virmontois, Cédric, Girard, Sylvain, P. Paillet, Paillet, Philippe, S. Girard, Cervantes, Paola, P. Cervantes, Magnan, Pierre, Martin-Gonthier, Philippe   +15 more
core   +1 more source

CMOS Cell Sensors for Point-of-Care Diagnostics

Sensors, 2012
The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics.
Haluk Kulah, Yekbun Adiguzel
doaj   +1 more source