Results 31 to 40 of about 12,188 (295)

CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity

Sensors, 2020
This paper presents a CMOS depth image sensor with offset pixel aperture (OPA) using a back-side illumination structure to improve disparity. The OPA method is an efficient way to obtain depth information with a single image sensor without additional ...
Jimin Lee, Sang-Hwan Kim, Hyeunwoo Kwen, Juneyoung Jang, Seunghyuk Chang, JongHo Park, Sang-Jin Lee, Jang-Kyoo Shin   +7 more
doaj   +1 more source

Silicon Wafer Gettering Design for Advanced CMOS Image Sensors Using Hydrocarbon Molecular Ion Implantation: A Review

IEEE Journal of the Electron Devices Society, 2022
We have developed silicon epitaxial wafers with high gettering capability using hydrocarbon molecular ion implantation for advanced Complementary Metal-Oxide-Semiconductor (CMOS) image sensors. These wafers have three unique silicon wafer characteristics
Kazunari Kurita, Takeshi Kadono, Ryosuke Okuyama, Ayumi Onaka-Masada, Satoshi Shigematsu, Ryo Hirose, Koji Kobayashi, Akihiro Suzuki, Hidehiko Okuda, Yoshihiro Koga   +9 more
doaj   +1 more source

Analysis of the Interference Effects in CMOS Image Sensors Caused by Strong Electromagnetic Pulses [PDF]

Journal of Electromagnetic Engineering and Science
With the electromagnetic environment becoming increasingly complex, it is crucial to address the risk posed by electromagnetic pulse, which critically impairs the performance and reliability of electronic systems based on complementary metal oxide ...
Zhikang Yang, Lin Wen, Yudong Li, Dong Zhou, Xin Wang, Rui Ding, Meiqing Zhong, Cui Meng, Wenxiao Fang, Qi Guo   +9 more
doaj   +1 more source

Research-grade CMOS image sensors for remote sensing applications [PDF]

, 2004
Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle.
Belliot, Pierre, Larnaudie, Franck, Corbière, Franck, Saint-Pé, Olivier, Estribeau, Magali, Tulet, Michel, Davancens, Robert, Magnan, Pierre, Martin-Gonthier, Philippe   +8 more
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Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
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Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]

, 2011
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux, Bardoux, A., V. Goiffon, Goiffon, Vincent, Bardoux, Alain, O. Saint-Pe, P. Magnan, Petit, S., Virmontois, Cédric, Saint-Pé, O., Girard, Sylvain, Magnan, P., Cedric Virmontois, Petit, Sophie, Rolland, Guy, S. Petit, Saint-Pé, Olivier, S. Girard, G. Rolland, Magnan, Pierre   +19 more
core   +1 more source

Analysis and Optimization of Noise Response for Low-Noise CMOS Image Sensors [PDF]

, 2012
CMOS image sensors are nowadays widely used in imaging applications and particularly in low light flux applications. This is really possible thanks to a reduction of noise obtained, among others, by the use of pinned photodiode associated with a ...
Molina, Romain, P. Magnan, P. Martin-Gonthier, Cervantes, Paola, R. Molina, P. Cervantes, Magnan, Pierre, Martin-Gonthier, Philippe   +7 more
core   +1 more source

Performance and Reliability Degradation of CMOS Image Sensors in Back-Side Illuminated Configuration

IEEE Journal of the Electron Devices Society, 2020
We present a systematic characterization of wafer-level reliability dedicated test structures in Back-Side-Illuminated CMOS Image Sensors. Noise and electrical measurements performed at different steps of the fabrication process flow, definitely ...
Andrea Vici, Felice Russo, Nicola Lovisi, Aldo Marchioni, Antonio Casella, Fernanda Irrera   +5 more
doaj   +1 more source

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2012
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent, Place, Sébastien, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Magnan, P., Gaillardin, M., Martin-Gonthier, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Magnan, Pierre, Martin-Gonthier, Philippe   +13 more
core   +1 more source

Development of a Charge-Multiplication CMOS Image Sensor Based on Capacitive Trench for Low-Light-Level Imaging

Sensors, 2023
This paper presents an electron multiplication charge coupled device (EMCCD) based on capacitive deep trench isolation (CDTI) and developed using complementary metal oxide semiconductor (CMOS) technology.
Olivier Marcelot, Marjorie Morvan, Antoine Salih Alj, Stephane Demiguel, Cedric Virmontois, Anne Rouvie, Magali Estribeau, Vincent Goiffon   +7 more
doaj   +1 more source