Results 51 to 60 of about 12,131,408 (286)
Impact of proton radiation and annealing of CMOS image sensors on star sensor performance
AIP AdvancesStar sensors play a crucial role as high-precision optical attitude navigation devices in satellite attitude control systems. The CMOS image sensor is an important component of the imaging system of the star sensor and experiences performance degradation
Yi-Hao Cui +5 more
doaj +1 more source
Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]
, 2012 Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Goiffon, Vincent +20 more
core +1 more source
Accurate and noninvasive prostate cancer detection using plasma‐derived extracellular vesicle RNA
FEBS Open Bio, EarlyView.Plasma extracellular vesicles were captured with WGA‐conjugated magnetic beads and profiled for RNA biomarkers. A three‐RNA panel (NM_024955, NR_047469, and NR_002564) distinguished prostate cancer from healthy controls and benign prostatic hyperplasia, supporting a simple, noninvasive approach to improve prostate cancer detection.
Hanping Wei, Haoran Wu, Wei Feng
wiley +1 more source
Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]
, 2012 1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Place, Sébastien +5 more
core +1 more source
FEBS Open Bio, EarlyView.The presence of biotin‐binding avidin proteins in fish and their biological significance are poorly characterized. We cataloged fish avidins and demonstrate that they are widely present and evolutionarily conserved. We created avd knockout zebrafish and show that zebavidin is dispensable for development and that resistance of avd knockout embryos in ...
Anni K. Saralahti +5 more
wiley +1 more source
Temperature Sensors Integrated into a CMOS Image Sensor
Proceedings, 2017 In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is
Accel Abarca +3 more
doaj +1 more source
Backside passivation for improving the noise performance in CMOS image sensor
AIP Advances, 2020 Great efforts have been made in the past few years to reduce the white pixel noise in complementary metal–oxide–semiconductor (CMOS) image sensors. As a promising approach, the surface passivation method focusing on the field-effect passivation has been ...
Peng Sun +7 more
doaj +1 more source
New source of random telegraph signal in CMOS image sensors [PDF]
, 2012 We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Goiffon, Vincent +4 more
core
Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors [PDF]
, 2012 Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared.
Bardoux, A. +13 more
core +1 more source
Advanced Engineering Materials, EarlyView.Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali +5 more
wiley +1 more source