Results 61 to 70 of about 12,188 (295)
Evidence of a novel source of random telegraph signal in CMOS image sensors [PDF]
, 2011 This letter reports a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
V. Goiffon +9 more
core +1 more source
Advanced Engineering Materials, EarlyView.Trace additions of Sn and Sr combined with a two‐step aging treatment are shown to enhance the microstructure and performance of Al–Zr–Sc conductor alloys. Strength and electrical conductivity increase concurrently through accelerated precipitation of fine Al3(Sc, Zr) precipitates and improved dislocation resistance, offering a cost‐effective pathway ...
Quan Shao +3 more
wiley +1 more source
New source of random telegraph signal in CMOS image sensors [PDF]
, 2012 We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Goiffon, Vincent +4 more
core
Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors [PDF]
, 2012 Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared.
Bardoux, A. +13 more
core +1 more source
Advanced Engineering Materials, EarlyView.A reconfigurable logic‐in‐memory cell composed of triple‐gated feedback field‐effect transistors implements multiple combinational logic functions within a single configuration. By utilizing program gates as dynamic input terminals, the proposed cell performs full adder, full subtractor, 2‐to‐1 multiplexer, and 4‐to‐2 encoder operations without ...
Minhyeok Seol +5 more
wiley +1 more source
Backside passivation for improving the noise performance in CMOS image sensor
AIP Advances, 2020 Great efforts have been made in the past few years to reduce the white pixel noise in complementary metal–oxide–semiconductor (CMOS) image sensors. As a promising approach, the surface passivation method focusing on the field-effect passivation has been ...
Peng Sun +7 more
doaj +1 more source
Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]
, 2012 1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Place, Sébastien +5 more
core +1 more source
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
Advanced Functional Materials, EarlyView.In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
The Journal of the Institute of Image Information and Television Engineers, 1998 新しく登場したCMOSイメージセンサを, すでに撮像素子として確固たる地位を確立しているCCDイメージセンサと比較することにより, その可能性を検討し, これからの技術課題を述べる.課題を解決できると, CCDセンサと同等またはそれ以上の性能を実現し, 大きな市場を形成すると予想できる.CMOSセンサの可能性としてシステムオンチップの現状についても触れる.
openaire +2 more sources
In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors [PDF]
, 2012 This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process.
Goiffon, Vincent +2 more
core +1 more source