Results 61 to 70 of about 49,708 (287)

Combined image signal processing for CMOS image sensors [PDF]

Electronics Letters, 2005
An efficient image signal processing structure is proposed for CMOS image sensors to achieve low area and power consumption. In the proposed structure, the gamma correction block is moved to the front to merge several image signal processings into one block.
Kimo Kim, In-Cheol Park
openaire   +2 more sources

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Machine Learning Based Single-Frame Super-Resolution Processing for Lensless Blood Cell Counting

Sensors, 2016
A lensless blood cell counting system integrating microfluidic channel and a complementary metal oxide semiconductor (CMOS) image sensor is a promising technique to miniaturize the conventional optical lens based imaging system for point-of-care testing (
Xiwei Huang, Yu Jiang, Xu Liu, Hang Xu, Zhi Han, Hailong Rong, Haiping Yang, Mei Yan, Hao Yu   +8 more
doaj   +1 more source

Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation [PDF]

, 2009
In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to ...
Estribeau, Magali, Goiffon, Vincent, Magnan, Pierre   +2 more
core  

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]

, 2010
This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Cervantes, Paola, Corbière, Franck, Estribeau, Magali, Goiffon, Vincent, Magnan, Pierre, Pinel, Philippe, Virmontois, Cédric   +6 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Novel Production Concept of CH₂F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3-D-Stacked CMOS Image Sensors

IEEE Journal of the Electron Devices Society
We have developed a novel molecular-ion implantation technique and a molecular-ion-implanted silicon epitaxial wafer for highly sensitive CMOS image sensors.
Ryo Hirose, Koji Kobayashi, Kazunari Kurita, Takeshi Kadono, Sho Nagatomo   +4 more
doaj   +1 more source

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

A new blind image conversion complexity metric for intelligent CMOS image sensors

IET Image Processing, 2021
Many algorithms have been developed for complementary metal–oxide–semiconductor (CMOS) image sensors to speed up analogue‐to‐digital (A‐to‐D) conversion of captured images.
Mohamed R. Elmezayen, Suat U. Ay
doaj   +1 more source

Temperature‐Modulated Threshold Response in a Volatile Memristor: Toward a Biomimetic Polymodal Nociceptive System

Advanced Functional Materials, EarlyView.
This study demonstrates an artificial polymodal nociceptor whose firing threshold is actively modulated by temperature. A volatile TiN/TiOx/ZnO/TiOx/ITO memristor shows interfacial ion–driven resistive switching and membrane‐potential‐like dynamics, enabling temperature‐dependent nociceptive behavior.
Chanmin Hwang, Yuseong Jang, Myoungsu Chae, Hee‐Dong Kim   +3 more
wiley   +1 more source