Results 81 to 90 of about 49,708 (287)
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Estribeau, Magali +2 more
core +1 more source
Atomic Layer Deposition in Transistors and Monolithic 3D Integration
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu +5 more
wiley +1 more source
CMOS Technology in Sensing Fields [PDF]
The role of CMOS Image Sensors since their birth around the 1960s has been changing a lot. Unlike the past, current CMOS Image Sensors are becoming competitive with regard to Charged Couple Device (CCD) technology. They offer many advantages with respect
Babu Sukhavasi, Suparshya +2 more
core
Dielectric capacitors typically struggle to achieve both high energy storage density and high efficiency at applied voltages below 10 V. Here, we address this challenge by introducing a novel hybrid fluorite/perovskite heterostructure design that combines ultra‐high recoverable energy storage density with efficient energy release (Uf ≈ 1016 J/cm3), at ...
Ampattu R. Jayakrishnan +10 more
wiley +1 more source
Single Photon Counting Performance and Noise Analysis of CMOS SPAD-Based Image Sensors
SPAD-based solid state CMOS image sensors utilising analogue integrators have attained deep sub-electron read noise (DSERN) permitting single photon counting (SPC) imaging.
Neale A. W. Dutton +3 more
doaj +1 more source
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Characterization of electrical crosstalk in 4T-APS arrays using TCAD simulations [PDF]
TCAD simulations have been conducted on a CMOS image sensor in order to characterize the electrical component of the crosstalk between pixels through the study of the electric field distribution. The image sensor consists on a linear array of five pinned
Carmona Galán, Ricardo +2 more
core +1 more source
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
An investigation of γ radiation detection with a CMOS imaging sensor
In this study, a feasibility of γ radiation detection using complementary metal-oxide semiconductor (CMOS) image sensors with a neural network algorithm to extract the γ rays interacted pixels has been investigated.
Jian Lin +9 more
doaj +1 more source
1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors
We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges.
Guo-Neng Lu +3 more
doaj +1 more source

