Results 81 to 90 of about 12,188 (295)

Combined image signal processing for CMOS image sensors [PDF]

Electronics Letters, 2005
An efficient image signal processing structure is proposed for CMOS image sensors to achieve low area and power consumption. In the proposed structure, the gamma correction block is moved to the front to merge several image signal processings into one block.
Kimo Kim, In-Cheol Park
openaire   +2 more sources

Overview of CMOS process and design options for image sensor dedicated to space applications [PDF]

, 2005
With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain.
Corbière, Franck, P. Magnan, P. Martin-Gonthier, F. Corbiere, Magnan, Pierre, Martin-Gonthier, Philippe   +5 more
core   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

A new blind image conversion complexity metric for intelligent CMOS image sensors

IET Image Processing, 2021
Many algorithms have been developed for complementary metal–oxide–semiconductor (CMOS) image sensors to speed up analogue‐to‐digital (A‐to‐D) conversion of captured images.
Mohamed R. Elmezayen, Suat U. Ay
doaj   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Column-Parallel Correlated Multiple Sampling Circuits for CMOS Image Sensors and Their Noise Reduction Effects

Sensors, 2010
For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors.
Shoji Kawahito, Shinya Itoh, Satoshi Aoyama, Sungho Suh   +3 more
doaj   +1 more source

Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation [PDF]

, 2009
In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to ...
Goiffon, Vincent, Estribeau, Magali, Magnan, Pierre   +2 more
core  

CMOS detectors for space applications: from R&D to operational program with large volume foundry [PDF]

, 2010
Nowadays, CMOS image sensors are widely considered for space applications. The use of CIS (CMOS Image sensor) processes has significantly enhanced their performances such as dark current, quantum efficiency and conversion gain.
Breart de Boisanger, Michel, Rolando, Sébastien, O. Saint-Pe, P. Magnan, F. Larnaudie, P. Martin-Gonthier, F. Corbiere, S. Rolando, Corbière, Franck, Larnaudie, Franck, Saint-Pé, Olivier, M. Breart de Boisanger, Magnan, Pierre, Martin-Gonthier, Philippe   +13 more
core   +1 more source

Unraveling the Electronic Structure of Silicon Vacancy Centers in 4H‐SiC

Advanced Functional Materials, EarlyView.
The electronic structure of the silicon vacancy in 4H‐SiC is probed via transient absorption spectroscopy, uncovering previously inaccessible excited states of the quartet and doublet spin channels, including the V2' transition. In combination with theoretical analysis, a comprehensive picture of the electronic structure is established.
Ali Tayefeh Younesi, Minh Tuan Luu, Christopher Linderälv, Vytautas Žalandauskas, Marianne Etzelmüller Bathen, Nguyen Tien Son, Takeshi Ohshima, Gergő Thiering, Lukas Razinkovas, Ronald Ulbricht   +9 more
wiley   +1 more source

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors

Sensors, 2017
Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current.
Kuo-Tsai Wu, Sheng-Jye Hwang, Huei-Huang Lee   +2 more
doaj   +1 more source