Results 71 to 80 of about 12,131,408 (286)

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Overview of CMOS process and design options for image sensor dedicated to space applications [PDF]

, 2005
With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain.
Corbière, Franck, P. Magnan, P. Martin-Gonthier, F. Corbiere, Magnan, Pierre, Martin-Gonthier, Philippe   +5 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

A new blind image conversion complexity metric for intelligent CMOS image sensors

IET Image Processing, 2021
Many algorithms have been developed for complementary metal–oxide–semiconductor (CMOS) image sensors to speed up analogue‐to‐digital (A‐to‐D) conversion of captured images.
Mohamed R. Elmezayen, Suat U. Ay
doaj   +1 more source

Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes [PDF]

, 2011
A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications.
V. Goiffon, Place, Sébastien, Goiffon, Vincent, J.-P. Carrere, P. Magnan, Roy, François, S. Place, Carrere, Jean-Pierre, Magnan, Pierre, F. Roy   +9 more
core   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Column-Parallel Correlated Multiple Sampling Circuits for CMOS Image Sensors and Their Noise Reduction Effects

Sensors, 2010
For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors.
Shoji Kawahito, Shinya Itoh, Satoshi Aoyama, Sungho Suh   +3 more
doaj   +1 more source

Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation [PDF]

, 2009
In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to ...
Goiffon, Vincent, Estribeau, Magali, Magnan, Pierre   +2 more
core  

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Finite Element Analysis of Film Stack Architecture for Complementary Metal-Oxide–Semiconductor Image Sensors

Sensors, 2017
Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current.
Kuo-Tsai Wu, Sheng-Jye Hwang, Huei-Huang Lee   +2 more
doaj   +1 more source