Results 71 to 80 of about 12,188 (295)

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Development of a Smartphone-Based Fluorescent Immunochromatographic Assay Strip Reader

Sensors, 2020
Fluorescence immunochromatographic assay (FICA) is a rapid immunoassay technique that has the characteristics of high precision and sensitivity. Although image FICA strip readers have the advantages of high portability and easy operation, the use of high-
Qi Zheng, Huihuang Wu, Haiyan Jiang, Jiejie Yang, Yueming Gao   +4 more
doaj   +1 more source

Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]

, 2011
Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
V. Goiffon, Goiffon, Vincent, Corbière, Franck, C. Virmontois, P. Magnan, Estribeau, Magali, F. Corbiere, Virmontois, Cédric, M. Estribeau, Cervantes, Paola, P. Cervantes, Magnan, Pierre   +11 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

A digital high-dynamic-range CMOS image sensor with multi-integration and pixel readout request [PDF]

, 2007
A novel principle has been developed to build an ultra wide dynamic range digital CMOS image sensor. Multiple integrations are used to achieve the required dynamic.
Segura, Josep, Philippe Martin-Gonthier, Guilvard, Alexandre, Alexandre Guilvard, Josep Segura, Magnan, Pierre, Pierre Magnan, Martin-Gonthier, Philippe   +7 more
core   +1 more source

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Novel Production Concept of CH₂F-Molecular-Ion Implanted Si Epitaxial Wafer for Highly Sensitive 3-D-Stacked CMOS Image Sensors

IEEE Journal of the Electron Devices Society
We have developed a novel molecular-ion implantation technique and a molecular-ion-implanted silicon epitaxial wafer for highly sensitive CMOS image sensors.
Ryo Hirose, Koji Kobayashi, Kazunari Kurita, Takeshi Kadono, Sho Nagatomo   +4 more
doaj   +1 more source

Machine Learning Based Single-Frame Super-Resolution Processing for Lensless Blood Cell Counting

Sensors, 2016
A lensless blood cell counting system integrating microfluidic channel and a complementary metal oxide semiconductor (CMOS) image sensor is a promising technique to miniaturize the conventional optical lens based imaging system for point-of-care testing (
Xiwei Huang, Yu Jiang, Xu Liu, Hang Xu, Zhi Han, Hailong Rong, Haiping Yang, Mei Yan, Hao Yu   +8 more
doaj   +1 more source

Radiation effects on CMOS image sensors with sub-2µm pinned photodiodes [PDF]

, 2011
A group of four commercial sensors with pixel pitches below 2μm has been irradiated with 60Co source at several total ionizing dose levels related to space applications.
V. Goiffon, Place, Sébastien, Goiffon, Vincent, J.-P. Carrere, P. Magnan, Roy, François, S. Place, Carrere, Jean-Pierre, Magnan, Pierre, F. Roy   +9 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source