Results 81 to 90 of about 292,668 (334)
Sensors, 2010 For low-noise complementary metal-oxide-semiconductor (CMOS) image sensors, the reduction of pixel source follower noises is becoming very important. Column-parallel high-gain readout circuits are useful for low-noise CMOS image sensors.
Shoji Kawahito +3 more
doaj +1 more source
GravityCam: higher resolution visible wide-field imaging [PDF]
, 2018 The limits to the angular resolution has, during the latest 70 years, been obtainable from the ground only through extremely expensive adaptive optics facilities at large telescopes, and covering extremely small spatial areas per exposure.
Downing +7 more
core +1 more source
Advanced Functional Materials, EarlyView.Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim +14 more
wiley +1 more source
Sensors, 2017 Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current.
Kuo-Tsai Wu +2 more
doaj +1 more source
New source of random telegraph signal in CMOS image sensors [PDF]
, 2012 We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Gaillardin, Marc +4 more
core
Form Factor Improvement of Smart-Pixels for Vision Sensors through 3-D Vertically- Integrated Technologies [PDF]
, 2014 While conventional CMOS active pixel sensors embed only the circuitry required for photo-detection, pixel addressing and voltage buffering, smart pixels incorporate also circuitry for data processing, data storage and control of data interchange.
Brea Sánchez, Víctor Manuel +7 more
core +1 more source
In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device
Advanced Functional Materials, EarlyView.In situ TEM biasing experiment demonstrates the volatile I‐V characteristic of MIM lamella device. In situ STEM‐EELS Ti L2/L3 ratio maps provide direct evidence of the oxygen vacancies migrations under positive/negative electrical bias, which is critical for revealing the RS mechanism for the MIM lamella device.
Di Zhang +19 more
wiley +1 more source
Low-frequency noise impact on CMOS image sensors [PDF]
, 2009 CMOS image sensors are nowadays extensively used in imaging applications even for high-end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
Magnan, Pierre +1 more
core
Timing generator for 120fps CMOS image sensors on 0.13 μm CMOS technology [PDF]
, 2017 Image clarity is an important criterion in digital imaging. However, typical rolling shutter type complementary metal-oxide semiconductor (CMOS) image sensors with frame rate of 30fps which is used for relatively slow speed image capture suffers from ...
Abdul Halin, Izhal +3 more
core +1 more source
Microsphere Autolithography—A Scalable Approach for Arbitrary Patterning of Dielectric Spheres
Advanced Functional Materials, EarlyView.MicroSphere Autolithography (µSAL) enables scalable fabrication of patchy particles with customizable surface motifs. Focusing light through dielectric microspheres creates well defined, tunable patches via a conformal poly(dopamine) photoresist. Nearly arbitrary surface patterns can be achieved, with the resolution set by the index contrast between ...
Elliott D. Kunkel +3 more
wiley +1 more source