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Crosstalk analysis in CMOS integrated circuits
The Fourth International Conference on Advanced Semiconductor Devices and Microsystem, 2003The ICs in LSI technology require multilayer connecting-lead systems employing large leads density, diminishing the physical distance between individual leads. The small lead-to-lead separation results increased crosstalk effects inside the integrated circuits.
J. Novak, J. Foit
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Phototransistors for CMOS Optoelectronic Integrated Circuits
Sensors and Actuators A: Physical, 2011Abstract Integrated pnp phototransistors (PT) built in 0.6 μm OPTO ASIC CMOS are presented. The production starts with a low doped epitaxial wafer as bulk material. This work presents several different types of phototransistors due to the realization of base and emitter areas. The different types are optimized for different goals, e.g.
P. Kostov +2 more
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Hybrid integration of VCSEL's to CMOS integrated circuits
IEEE Journal of Selected Topics in Quantum Electronics, 1999Three hybrid integration techniques for bonding vertical-cavity surface-emitting lasers (VCSELs) to CMOS integrated circuit chips have been developed and compared in order to determine the optimum method of fabricating VCSEL based smart pixels for optical interconnects and free-space optical processing.
R. Pu, C. Duan, C.W. Wilmsen
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Latch-up in CMOS integrated circuits
1989This paper defines the latch-up failure mechanism in CMOS, analyzes methods and tools to detect it, including microscopy techniques capable of identify parasitic latch-up paths; test structures for the study of latch-up sensitivity and methods to prevent latch-up are also described.
FANTINI, Fausto +2 more
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Millimeter-Wave Integrated Circuits in 65-nm CMOS
IEEE Journal of Solid-State Circuits, 2008We present the design and measurement results of millimeter-wave integrated circuits implemented in 65-nm baseline CMOS. Both active and passive test structures were measured. In addition, we present the design of an on-chip spiral balun and the transition from CPW to the balun and report transistor noise parameter measurement results at V-band ...
Varonen, M. +4 more
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CMOS integrated circuit for sensing applications
19th International Conference on VLSI Design held jointly with 5th International Conference on Embedded Systems Design (VLSID'06), 2006In this work, a CMOS integrated circuit (IC) that can be employed to develop an integrated fiber optic sensor based on phase detection technique is presented. The CMOS IC combines the LED driver circuitry, optical detector and phase detector circuitry on a single chip.
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Differential testing of CMOS integrated circuits
2009As CMOS technologies scale down, background leakage current increases inexorably, primarily due to device sub-threshold leakage. As a result, conventional single-threshold pass/fail IDDQ testing may no longer be valid for deep sub-micron technology. A number of alternatives to single threshold IDDQ testing have been proposed.
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Fundamentals of High-Frequency CMOS Analog Integrated Circuits
2001This textbook is ideal for senior undergraduate and graduate courses in RF CMOS circuits, RF circuit design, and high-frequency analog circuit design. It is aimed at electronics engineering students and IC design engineers in the field, wishing to gain a deeper understanding of circuit fundamentals, and to go beyond the widely-used automated design ...
Duran Leblebici, Yusuf Leblebici
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Design of RF-CMOS Integrated Circuits for Wireless Communications
2007 IEEE International Workshop on Radio-Frequency Integration Technology, 2007The emergence of digital mobile broadband communication systems for voice, data, multimedia and positioning is coupled to the continuous progress of silicon CMOS-technology. Single chip integration with digital part, high integration density, low power consumption, low cost under mass production aspects and excellent RF performance are the current ...
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ESD in CMOS Integrated Circuit
2023 IEEE International Conference on Image Processing and Computer Applications (ICIPCA), 2023openaire +1 more source

