Results 51 to 60 of about 72,784 (298)
A self‐biased and all‐in‐one voltage and current reference
Electronics Letters, 2021 This Letter presents a high‐performance self‐biased and all‐in‐one voltage and current reference without BJT and V–I converter exploiting the zero‐temperature‐coefficient point of the N‐type MOSFET.
Yuanfei Wang +4 more
doaj +1 more source
Design of a tunable multi-band differential LC VCO using 0.35 mu m SiGe BiCMOS technology for multi-standard wireless communication systems [PDF]
, 2009 In this paper, an integrated 2.2-5.7GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mu m SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together
Bakkaloglu, Ahmet Kemal +8 more
core +1 more source
Advanced Functional Materials, EarlyView.Molecular engineering of a nonconjugated radical polymer enables a significant enhancement of the glass transition temperature. The amorphous nature and tunability of the polymer, arising from its nonconjugated backbone, facilitates the fabrication of organic memristive devices with an exceptionally high yield (>95%), as well as substantial ...
Daeun Kim +14 more
wiley +1 more source
Advanced Functional Materials, EarlyView.The article presents nanomaterial‐integrated fiber neural probes as innovative tools for deep brain molecular sensing, neural stimulation, and temperature monitoring. It examines breakthroughs in SERS‐based biomolecule detection, thermoplasmonic activation, and luminescent thermometry, alongside strategies to overcome stability, specificity, and ...
Di Zheng +5 more
wiley +1 more source
Advanced Functional Materials, EarlyView.A W/NbOx/Pt memristor demonstrates the coexistence of volatile, non‐volatile, and threshold switching characteristics. Volatile switching serves as a reservoir computing layer, providing dynamic short‐term processing. Non‐volatile switching, stabilized through ISPVA, improves reliable long‐term readout. Threshold switching operates as a leaky integrate
Ungbin Byun, Hyesung Na, Sungjun Kim
wiley +1 more source
Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2
iScience, 2021 Summary: Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low ...
Wanying Du +5 more
doaj +1 more source
Design of a 4.2-5.4 GHz differential LC VCO using 0.35 mu m SiGeBiCMOS technology for IEEE 802.11a applications [PDF]
, 2007 In this paper, a 4.2-5.4 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 mu m SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs ...
Bozkurt, Ayhan +3 more
core +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, EarlyView.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
Micromachines, 2019 When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized.
Henry H. Radamson +15 more
doaj +1 more source
A 1.2 V and 69 mW 60 GHz Multi-channel Tunable CMOS Receiver Design [PDF]
, 2015 A multi-channel receiver operating between 56 GHz and 70 GHz for coverage of different 60 GHz bands worldwide is implemented with a 90 nm Complementary Metal-Oxide Semiconductor (CMOS) process.
Oncu, A.
core +2 more sources