Results 21 to 30 of about 7,631,832 (303)
CMOS Image Sensors for High Speed Applications
Sensors, 2009 Recent advances in deep submicron CMOS technologies and improved pixel designs have enabled CMOS-based imagers to surpass charge-coupled devices (CCD) imaging technology for mainstream applications.
M. Jamal Deen +5 more
doaj +1 more source
Design of RF Power Amplifiers Using Parallel-Series Power Combining Transformers [PDF]
Engineering and Technology Journal, 2015 This paper presents the design of a one watt-level RF CMOS Power Amplifier (PA) based on power combining transformers PSCT in 0.13 µm technology using ADS 2011.10.
Suhad. H. Jasim, Ahmed S. Ezzulddin
doaj +1 more source
IEEE Journal of Selected Topics in Quantum Electronics, 2018 We present a high-performance back-illuminated three-dimensional stacked single-photon avalanche diode (SPAD), which is implemented in 45-nm CMOS technology for the first time.
Myung-Jae Lee +7 more
semanticscholar +1 more source
CMOS MEMS Design and Fabrication Platform
Frontiers in Mechanical Engineering, 2022 This article mainly describes the technology related to the CMOS MEMS process platform provided by the Taiwan Semiconductor Research Institute (TSRI), including the process flow, design verification, back-end dicing, and packaging of the CMOS MEMS ...
Sheng-Hsiang Tseng
doaj +1 more source
Ain Shams Engineering Journal, 2023 This paper presents a novel 16-bit arithmetic logic unit (ALU) design by cascading simple 1-bit ALUs using metal–oxide-semiconductor field effect transistor (MOSFET) and FinFET technologies while incorporating adiabatic switching principle.
Reginald H. Vanlalchaka +2 more
doaj +1 more source
IEEE Journal of Selected Topics in Quantum Electronics, 2017 We present the design and fabrication of terahertz (THz) metamaterial (MM) absorbers and their monolithic integration into a commercial CMOS technology along with its respective readout electronics to produce a low-cost, uncooled, and high resolution THz
Ivonne Escorcia Carranza +3 more
semanticscholar +1 more source
A CNN UNIVERSAL CHIP IN CMOS TECHNOLOGY
International Journal of Circuit Theory and Applications, 1996 This paper describes the design of a CNN universal chip in a standard CMOS technology. The core of the chip consists of an array of 32×32 completely programmable CNN cells. Input image can be loaded in optical or electrical form. Accuracy is in the range of 7-8 bit, and cell density is of 33 cells/mm2.
Servando Espejo +3 more
openaire +3 more sources
HeliyonIn this work, we introduce an enhanced Finite Volume Method (FVM) designed for the quasi-electrostatic analysis of microfluidic devices in the frequency domain.
Milan Rother +2 more
doaj +1 more source
New ELIN Systems Using CMOS Transistors in Weak Inversion Operation
Advances in Electrical and Computer Engineering, 2013 In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors.
BOZOMITU, R. G., CEHAN, V.
doaj +1 more source
Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
Sensors, 2020 Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (
Chin-An Hsieh +4 more
doaj +1 more source