Results 21 to 30 of about 8,692,712 (154)
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Goiffon, Vincent +5 more
core +1 more source
In this work, we introduce an enhanced Finite Volume Method (FVM) designed for the quasi-electrostatic analysis of microfluidic devices in the frequency domain.
Milan Rother +2 more
doaj +1 more source
A CNN UNIVERSAL CHIP IN CMOS TECHNOLOGY
This paper describes the design of a CNN universal chip in a standard CMOS technology. The core of the chip consists of an array of 32×32 completely programmable CNN cells. Input image can be loaded in optical or electrical form. Accuracy is in the range of 7-8 bit, and cell density is of 33 cells/mm2.
Servando Espejo +3 more
openaire +3 more sources
Dynamic Range Limitations of a Microwave Imaging Setup for Breast Cancer Detection
There are multiple microwave breast imaging (MBI) systems that are already conducting clinical trials. One common feature of these systems is the use of expensive radio-frequency (RF) laboratory equipment, such as vector network analyzers (VNA).
Martin Maier +3 more
doaj +1 more source
Microwave Imaging for Breast Cancer Detection - A Comparison Between VNA and FMCW Radar
This paper presents the comparison between microwave imaging for breast cancer detection using a vector network analyzer (VNA) and a frequency-modulated continuous wave (FMCW) radar system.
Martin Maier +6 more
doaj +1 more source
New ELIN Systems Using CMOS Transistors in Weak Inversion Operation
In this paper new ELIN systems implemented by using CMOS transistors in weak inversion operation are presented. The proposed systems exploit the exponential-law characteristics of the subthreshold CMOS transistors.
BOZOMITU, R. G., CEHAN, V.
doaj +1 more source
Photon-Detection-Probability Simulation Method for CMOS Single-Photon Avalanche Diodes
Single-photon avalanche diodes (SPADs) in complementary metal-oxide-semiconductor (CMOS) technology have excellent timing resolution and are capable to detect single photons. The most important indicator for its sensitivity, photon-detection probability (
Chin-An Hsieh +4 more
doaj +1 more source
This paper presents a novel 16-bit arithmetic logic unit (ALU) design by cascading simple 1-bit ALUs using metal–oxide-semiconductor field effect transistor (MOSFET) and FinFET technologies while incorporating adiabatic switching principle.
Reginald H. Vanlalchaka +2 more
doaj +1 more source
Analog SiPM in planar CMOS technology
Silicon Photomultipliers (SiPMs) are emerging single photon detectors used in many applications requiring large active area, photon number resolving capability and immunity to magnetic fields. We developed planar analog SiPMs in a reliable and cost-effective CMOS technology with a total photosensitive area of about 1×1 mm2. Three devices with different
VILLA, FEDERICA ALBERTA +6 more
openaire +3 more sources
Design and analysis of QCA adder circuits for efficient computation
QCA technology is considered a viable alternative for CMOS technology since it solves most of the CMOS implications. The Quantum dot Cellular Automata is a computer software program that relates a discrete dynamical system with quantum mechanics. Quantum
Jency Rubia J, Babitha Lincy R
doaj +1 more source

